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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RV5A040APTCR1

RV5A040APTCR1

MOSFET P-CH 12V 4A DFN1616-6

Rohm Semiconductor

5,995 -
RV5A040APTCR1

数据表

- 6-PowerWFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.5V, 4.5V 62mOhm @ 4A, 4.5V Surface Mount 1V @ 1mA 16 nC @ 4.5 V 12 V -8V, 0V 2000 pF @ 6 V - - DFN1616-8S - 700mW (Ta) 150°C (TJ)
RK3055ETL

RK3055ETL

MOSFET N-CH 60V 8A CPT3

Rohm Semiconductor

7,747 -
RK3055ETL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 150mOhm @ 4A, 10V Surface Mount 2.5V @ 1mA - 60 V ±20V 520 pF @ 10 V - - CPT3 - 20W (Tc) 150°C (TJ)
RSQ015P10TR

RSQ015P10TR

MOSFET P-CH 100V 1.5A TSMT6

Rohm Semiconductor

2,249 -
RSQ015P10TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 4V, 10V 470mOhm @ 1.5A, 10V Surface Mount 2.5V @ 1mA 17 nC @ 5 V 100 V ±20V 950 pF @ 25 V - - TSMT6 (SC-95) - 600mW (Ta) 150°C (TJ)
RSD175N10TL

RSD175N10TL

MOSFET N-CH 100V 17.5A CPT3

Rohm Semiconductor

7,118 -
RSD175N10TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 17.5A (Ta) 4V, 10V 105mOhm @ 8.8A, 10V Surface Mount 2.5V @ 1mA 24 nC @ 10 V 100 V ±20V 950 pF @ 25 V - - CPT3 - 20W (Tc) 150°C (TJ)
RS1E280BNTB

RS1E280BNTB

MOSFET N-CH 30V 28A 8HSOP

Rohm Semiconductor

19,987 -
RS1E280BNTB

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 80A (Tc) 4.5V, 10V 2.3mOhm @ 28A, 10V Surface Mount 2.5V @ 1mA 94 nC @ 10 V 30 V ±20V 5100 pF @ 15 V - - 8-HSOP - 3W (Ta), 30W (Tc) 150°C (TJ)
RS1E240GNTB

RS1E240GNTB

MOSFET N-CH 30V 24A 8HSOP

Rohm Semiconductor

8,128 -
RS1E240GNTB

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 72A (Tc) 4.5V, 10V 3.3mOhm @ 24A, 10V Surface Mount 2.5V @ 1mA 23 nC @ 10 V 30 V ±20V 1500 pF @ 15 V - - 8-HSOP - 3W (Ta), 27W (Tc) 150°C (TJ)
RQ1E050RPTR

RQ1E050RPTR

MOSFET P-CH 30V 5A TSMT8

Rohm Semiconductor

427 -
RQ1E050RPTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5A (Ta) 4V, 10V 31mOhm @ 5A, 10V Surface Mount 2.5V @ 1mA 28 nC @ 10 V 30 V ±20V 1300 pF @ 10 V - - TSMT8 - 700mW (Ta) 150°C (TJ)
RRQ045P03TR

RRQ045P03TR

MOSFET P-CH 30V 4.5A TSMT6

Rohm Semiconductor

5,215 -
RRQ045P03TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4V, 10V 35mOhm @ 4.5A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 5 V 30 V ±20V 1350 pF @ 10 V - - TSMT6 (SC-95) - 600mW (Ta) 150°C (TJ)
RF4L055GNTCR

RF4L055GNTCR

MOSFET N-CH 60V 5.5A HUML2020L8

Rohm Semiconductor

13,791 -
RF4L055GNTCR

数据表

- 8-PowerUDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V Surface Mount 2.7V @ 1mA 7.8 nC @ 10 V 60 V ±20V 400 pF @ 30 V - - HUML2020L8 - 2W (Ta) 150°C (TJ)
R6000ENHTB1

R6000ENHTB1

600V 0.5A, SOP8, LOW-NOISE POWER

Rohm Semiconductor

2,104 -
R6000ENHTB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500mA (Ta) 10V 8.8Ohm @ 200mA, 10V Surface Mount 5V @ 1mA 4.3 nC @ 10 V 600 V ±20V 45 pF @ 25 V - - 8-SOP - 2W (Ta) 150°C
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