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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK2557DPA-WS#J0

RJK2557DPA-WS#J0

MOSFET N-CH 250V 17A 8WPAK

Renesas Electronics Corporation

2,021 -
RJK2557DPA-WS#J0

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta) 10V 128mOhm @ 8.5A, 10V Surface Mount 4.5V @ 1mA 20 nC @ 10 V 250 V ±30V 1250 pF @ 25 V - - 8-WPAK (3) - 30W (Tc) 150°C
RJK4006DPD-WS#J2

RJK4006DPD-WS#J2

MOSFET N-CH 400V 8A MP3A

Renesas Electronics Corporation

6,480 -
RJK4006DPD-WS#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 800mOhm @ 4A, 10V Surface Mount 4.5V @ 1mA 20 nC @ 10 V 400 V ±30V 620 pF @ 25 V - - MP-3A - 65W (Tc) 150°C
RJK4532DPD-E0#J2

RJK4532DPD-E0#J2

MOSFET N-CH 450V 4A MP3A

Renesas Electronics Corporation

8,337 -
RJK4532DPD-E0#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.3Ohm @ 2A, 10V Surface Mount 4.5V @ 1mA 9 nC @ 10 V 450 V ±30V 280 pF @ 25 V - - MP-3A - 40.3W (Tc) 150°C
RJK5006DPD-WS#J2

RJK5006DPD-WS#J2

MOSFET N-CH 500V 6A MP3A

Renesas Electronics Corporation

4,246 -
RJK5006DPD-WS#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 1.3Ohm @ 3A, 10V Surface Mount 4.5V @ 1mA 20 nC @ 10 V 500 V ±30V 600 pF @ 25 V - - MP-3A - 65W (Tc) 150°C
RJK5030DPD-01#J2

RJK5030DPD-01#J2

MOSFET N-CH 500V 5A MP3A

Renesas Electronics Corporation

2,221 -
RJK5030DPD-01#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.6Ohm @ 2A, 10V Surface Mount 4.5V @ 1mA - 500 V ±30V 550 pF @ 25 V - - MP-3A - 41.7W (Tc) 150°C
RJK5030DPD-02#J2

RJK5030DPD-02#J2

MOSFET N-CH 500V 5A MP3A

Renesas Electronics Corporation

4,365 -
RJK5030DPD-02#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.6Ohm @ 2A, 10V Surface Mount 4.5V @ 1mA - 500 V ±30V 550 pF @ 25 V - - MP-3A - 41.7W (Tc) 150°C
RJK5031DPD-01#J2

RJK5031DPD-01#J2

MOSFET N-CH 500V 3A MP3A

Renesas Electronics Corporation

5,164 -
RJK5031DPD-01#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.2Ohm @ 1.5A, 10V Surface Mount 4.5V @ 1mA - 500 V ±30V 280 pF @ 25 V - - MP-3A - 40.3W (Tc) 150°C
RJK6002DPD-WS#J2

RJK6002DPD-WS#J2

MOSFET N-CH 600V 2A MP3A

Renesas Electronics Corporation

2,725 -
RJK6002DPD-WS#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 6.8Ohm @ 1A, 10V Surface Mount 4.5V @ 1mA 6.2 nC @ 10 V 600 V ±30V 165 pF @ 25 V - - MP-3A - 30W (Tc) 150°C
RQA0002DNSTB-E

RQA0002DNSTB-E

MOSFET N-CH 16V 3.8A 2HWSON

Renesas Electronics Corporation

4,132 -
RQA0002DNSTB-E

数据表

- 2-DFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Ta) - - Surface Mount 750mV @ 1mA - 16 V ±5V 102 pF @ 0 V - - 2-HWSON (5x4) - 15W (Tc) 150°C
RQA0004PXDQS#H1

RQA0004PXDQS#H1

MOSFET N-CH 16V 300MA UPAK

Renesas Electronics Corporation

2,488 -
RQA0004PXDQS#H1

数据表

- TO-243AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Ta) - - Surface Mount 900mV @ 1mA - 16 V ±5V 10 pF @ 0 V - - UPAK - 3W (Ta) 150°C
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