onsemi|场效应晶体管（FETs）、MOSFETs - 页 144

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FQPF12N60 MOSFET N-CH 600V 5.8A TO220F onsemi	9,744	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.8A (Tc)	10V	700mOhm @ 2.9A, 10V	Through Hole	5V @ 250µA	54 nC @ 10 V	600 V	±30V	1900 pF @ 25 V	-	-	TO-220F-3	-	55W (Tc)	-55°C ~ 150°C (TJ)
NVBG023N065M3S SIC MOS D2PAK-7L 23MOHM 650V M3S onsemi	1,600	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	70A (Tc)	15V, 18V	33mOhm @ 20A, 18V	Surface Mount	4V @ 10mA	69 nC @ 18 V	650 V	+22V, -8V	1951 pF @ 400 V	AEC-Q101	-	D2PAK-7	Automotive	263W (Tc)	-55°C ~ 175°C (TJ)
NVHL060N065SC1 SIC MOS TO247-3L 650V onsemi	450	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	47A (Tc)	15V, 18V	70mOhm @ 20A, 18V	Through Hole	4.3V @ 6.5mA	74 nC @ 18 V	650 V	+22V, -8V	1473 pF @ 325 V	AEC-Q101	-	TO-247-3	Automotive	176W (Tc)	-55°C ~ 175°C (TJ)
NVHL023N065M3S SIC MOS TO247-3L 23MOHM 650V M3S onsemi	440	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	70A (Tc)	15V, 18V	33mOhm @ 20A, 18V	Through Hole	4V @ 10mA	69 nC @ 18 V	650 V	+22V, -8V	1952 pF @ 400 V	AEC-Q101	-	TO-247-3	Automotive	263W (Tc)	-55°C ~ 175°C (TJ)
FCH029N65S3-F155 MOSFET N-CH 650V 75A TO247-3 onsemi	399	-	询价单	数据表	SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	-	29mOhm @ 37.5A, 10V	Through Hole	4.5V @ 7mA	201 nC @ 10 V	650 V	±30V	6340 pF @ 400 V	-	-	TO-247-3	-	463W (Tc)	-55°C ~ 150°C (TJ)
NTH4L018N075SC1 SIC MOS TO247-4L 750V onsemi	400	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	140A (Tc)	15V, 18V	18mOhm @ 66A, 18V	Through Hole	4.3V @ 22mA	262 nC @ 18 V	750 V	+22V, -8V	5010 pF @ 375 V	-	-	TO-247-4	-	500W (Tc)	-55°C ~ 175°C (TJ)
NVH4L060N090SC1 - onsemi	1,349	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	46A (Tc)	15V, 18V	84mOhm @ 20A, 15V	Through Hole	4.3V @ 5mA	87 nC @ 15 V	900 V	+22V, -8V	1770 pF @ 450 V	AEC-Q101	-	TO-247-4L	Automotive	221W (Tc)	-55°C ~ 175°C (TJ)
NVH4L045N065SC1 SIC MOS TO247-4L 650V onsemi	422	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tc)	15V, 18V	50mOhm @ 25A, 18V	Through Hole	4.3V @ 8mA	105 nC @ 18 V	650 V	+22V, -8V	1870 pF @ 325 V	AEC-Q101	-	TO-247-4L	Automotive	187W (Tc)	-55°C ~ 175°C (TJ)
NVMFS5C430NWFAFT3G MOSFET N-CH 40V 35A/185A 5DFN onsemi	4,460	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	35A (Ta), 185A (Tc)	10V	1.7mOhm @ 50A, 10V	Surface Mount	3.5V @ 250µA	47 nC @ 10 V	40 V	±20V	3300 pF @ 25 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.8W (Ta), 106W (Tc)	-55°C ~ 175°C (TJ)
NVBG060N090SC1 SIC MOS N-CH 900V 5.8A D2PAK-7 onsemi	2,081	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	5.8A (Ta), 44A (Tc)	15V	84mOhm @ 20A, 15V	Surface Mount	4.3V @ 5mA	88 nC @ 15 V	900 V	+19V, -10V	1800 pF @ 450 V	AEC-Q101	-	D2PAK-7	Automotive	3.6W (Ta), 211W (Tc)	-55°C ~ 175°C (TJ)

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