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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NVHL025N065SC1

NVHL025N065SC1

SIC MOS TO247-3L 650V

onsemi

450 -
NVHL025N065SC1

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V Through Hole 4.3V @ 15.5mA 164 nC @ 18 V 650 V +22V, -8V 3480 pF @ 325 V AEC-Q101 - TO-247-3 Automotive 348W (Tc) -55°C ~ 175°C (TJ)
NVH4L025N065SC1

NVH4L025N065SC1

SIC MOS TO247-4L 650V

onsemi

882 -
NVH4L025N065SC1

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V Through Hole 4.3V @ 15.5mA 164 nC @ 18 V 650 V +22V, -8V 3480 pF @ 325 V AEC-Q101 - TO-247-4L Automotive 348W (Tc) -55°C ~ 175°C (TJ)
NTHL019N60S5F

NTHL019N60S5F

SUPERFET5 FRFET, 19MOHM, TO-247-

onsemi

442 -
NTHL019N60S5F

数据表

SuperFET® V, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 19mOhm @ 37.5A,10V Through Hole 4.8V @ 15.7mA 252 nC @ 10 V 600 V ±30V 13400 pF @ 400 V - - TO-247-3 - 568W (Tc) -55°C ~ 150°C (TJ)
NVH4L030N120M3S

NVH4L030N120M3S

SILICON CARBIDE (SIC) MOSFET-ELI

onsemi

393 -
NVH4L030N120M3S

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 73A (Tc) 18V 39mOhm @ 30A, 18V Through Hole 4.4V @ 15mA 107 nC @ 18 V 1200 V +22V, -10V 2430 pF @ 800 V AEC-Q101 - TO-247-4L Automotive 313W (Tc) -55°C ~ 175°C (TJ)
NVHL070N120M3S

NVHL070N120M3S

SIC MOS TO247-3L 70MOHM 1200V M3

onsemi

410 -
NVHL070N120M3S

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 34A (Tc) 18V 87mOhm @ 15A, 18V Through Hole 4.4V @ 7mA 57 nC @ 18 V 1200 V +22V, -10V 1230 pF @ 800 V AEC-Q101 - TO-247-3 Automotive 160W (Tc) -55°C ~ 175°C (TJ)
NTMFS4C10NCT1G

NTMFS4C10NCT1G

NFET SO8FL 30V 46A 6.96MO

onsemi

9,229 -
NTMFS4C10NCT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta), 46A (Tc) 4.5V, 10V - Surface Mount 2.2V @ 250µA 18.6 nC @ 10 V 30 V ±20V 987 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 2.49W (Ta), 23.6W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C410NLT3G

NVMFS5C410NLT3G

MOSFET N-CH 40V 48A/315A 5DFN

onsemi

4,375 -
NVMFS5C410NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 48A (Ta), 315A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V Surface Mount 2V @ 250µA 143 nC @ 10 V 40 V ±20V 8862 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
RFP70N03

RFP70N03

MOSFET N-CH 30V 70A TO220-3

onsemi

2,462 -
RFP70N03

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) - 10mOhm @ 70A, 10V Through Hole 4V @ 250µA 260 nC @ 20 V 30 V - 3300 pF @ 25 V - - TO-220-3 - - -
NVHL015N065SC1

NVHL015N065SC1

SIC MOS TO247-3L 650V

onsemi

447 -
NVHL015N065SC1

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 163A (Tc) 15V, 18V 18mOhm @ 75A, 12V Through Hole 4.3V @ 25mA 283 nC @ 18 V 650 V +22V, -8V 4790 pF @ 325 V AEC-Q101 - TO-247-3 Automotive 643W (Tc) -55°C ~ 175°C (TJ)
NCV81342CBATXG

NCV81342CBATXG

MOSFET

onsemi

1,000 -
NCV81342CBATXG

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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