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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM10N60CZ C0G

TSM10N60CZ C0G

MOSFET N-CH 600V 10A TO220

Taiwan Semiconductor Corporation

8,092 -
TSM10N60CZ C0G

数据表

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 750mOhm @ 5A, 10V Through Hole 4V @ 250µA 45.8 nC @ 10 V 600 V ±30V 1738 pF @ 25 V - - TO-220 - 166W (Tc) -55°C ~ 150°C (TJ)
TSM22P10CI C0G

TSM22P10CI C0G

MOSFET P-CH 100V 22A ITO220

Taiwan Semiconductor Corporation

5,265 -
TSM22P10CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V Through Hole 3V @ 250µA 42 nC @ 10 V 100 V ±25V 2250 pF @ 30 V - - ITO-220 - 48W (Tc) 150°C (TJ)
TSM22P10CZ C0G

TSM22P10CZ C0G

MOSFET P-CH 100V 22A TO220

Taiwan Semiconductor Corporation

8,050 -
TSM22P10CZ C0G

数据表

- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V Through Hole 3V @ 250µA 42 nC @ 10 V 100 V ±25V 2250 pF @ 30 V - - TO-220 - 125W (Tc) 150°C (TJ)
TSM230N06CI C0G

TSM230N06CI C0G

MOSFET N-CH 60V 50A ITO220

Taiwan Semiconductor Corporation

6,455 -
TSM230N06CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 28 nC @ 10 V 60 V ±20V 1680 pF @ 25 V - - ITO-220 - 42W (Tc) 150°C (TJ)
TSM480P06CI C0G

TSM480P06CI C0G

MOSFET P-CH 60V 20A ITO220

Taiwan Semiconductor Corporation

6,126 -
TSM480P06CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V Through Hole 2.2V @ 250µA 22.4 nC @ 10 V 60 V ±20V 1250 pF @ 30 V - - ITO-220 - 27W (Tc) -50°C ~ 150°C (TJ)
TSM480P06CZ C0G

TSM480P06CZ C0G

MOSFET P-CH 60V 20A TO220

Taiwan Semiconductor Corporation

9,265 -
TSM480P06CZ C0G

数据表

- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V Through Hole 2.2V @ 250µA 22.4 nC @ 10 V 60 V ±20V 1250 pF @ 30 V - - TO-220 - 66W (Tc) -50°C ~ 150°C (TJ)
TSM680P06CI C0G

TSM680P06CI C0G

MOSFET P-CH 60V 18A ITO220

Taiwan Semiconductor Corporation

9,949 -
TSM680P06CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V Through Hole 2.2V @ 250µA 16.4 nC @ 10 V 60 V ±20V 870 pF @ 30 V - - ITO-220 - 17W (Tc) -55°C ~ 150°C (TJ)
TSM680P06CZ C0G

TSM680P06CZ C0G

MOSFET P-CH 60V 18A TO220

Taiwan Semiconductor Corporation

3,949 -
TSM680P06CZ C0G

数据表

- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V Through Hole 2.2V @ 250µA 16.4 nC @ 10 V 60 V ±20V 870 pF @ 30 V - - TO-220 - 42W (Tc) -55°C ~ 150°C (TJ)
2N7000-AP

2N7000-AP

MOSFET N-CH 60V 200MA TO92

Micro Commercial Co

3,899 -
2N7000-AP

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 220mA (Ta) 10V 5Ohm @ 500mA, 10V Through Hole 3V @ 1mA - 60 V ±20V 60 pF @ 25 V - - TO-92 - 625mW (Ta) -55°C ~ 150°C
MCMP06-TP

MCMP06-TP

MOSFET P-CH 2A DFN2020-6U

Micro Commercial Co

5,647 -
MCMP06-TP

数据表

- 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel - 2A (Ta) - 110mOhm @ 2.8A, 4.5V Surface Mount 1V @ 250µA - - - - - Schottky Diode (Isolated) DFN2020-6U - - 150°C (TJ)
IPD25DP06LMSAUMA1

IPD25DP06LMSAUMA1

MOSFET P-CH 60V 6.5A TO252-3

Infineon Technologies

6,538 -
IPD25DP06LMSAUMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 4.5V, 10V 250mOhm @ 6.5A, 10V Surface Mount 2V @ 270µA 13.8 nC @ 10 V 60 V ±20V 420 pF @ 30 V - - PG-TO252-3-313 - 28W (Tc) -55°C ~ 175°C (TJ)
NTTFS003N04CTAG

NTTFS003N04CTAG

MOSFET N-CH 40V 22A/103A 8WDFN

onsemi

5,753 -
NTTFS003N04CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 103A (Tc) 10V 3.5mOhm @ 50A, 10V Surface Mount 3.5V @ 60µA 23 nC @ 10 V 40 V ±20V 1600 pF @ 25 V - - 8-WDFN (3.3x3.3) - 3.2W (Ta), 69W (Tc) -55°C ~ 175°C (TJ)
NVD4810NT4G-VF01

NVD4810NT4G-VF01

MOSFET N-CH 30V 9A/54A DPAK

onsemi

7,148 -
NVD4810NT4G-VF01

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta), 54A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 21 nC @ 11.5 V 30 V ±20V 1350 pF @ 12 V AEC-Q101 - DPAK-3 Automotive 1.4W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
CP398X-CPDM303NH-CT

CP398X-CPDM303NH-CT

MOSFET N-CH 30V 3.6A DIE

Central Semiconductor Corp

8,484 -
CP398X-CPDM303NH-CT

数据表

- Die Bulk Active N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 2.5V, 4.5V 78mOhm @ 1.8A, 2.5V Surface Mount 1.2V @ 250µA 13 nC @ 4.5 V 30 V 12V 590 pF @ 10 V - - Die - - -55°C ~ 150°C (TJ)
CP398X-CPDM303NH-WN

CP398X-CPDM303NH-WN

MOSFET N-CH 30V 3.6A DIE

Central Semiconductor Corp

2,977 -
CP398X-CPDM303NH-WN

数据表

- Die Bulk Active N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 2.5V, 4.5V 78mOhm @ 1.8A, 2.5V Surface Mount 1.2V @ 250µA 13 nC @ 4.5 V 30 V 12V 590 pF @ 10 V - - Die - - -55°C ~ 150°C (TJ)
CP398X-CTLDM303N-WN

CP398X-CTLDM303N-WN

MOSFET N-CH 30V 3.6A DIE

Central Semiconductor Corp

3,432 -
CP398X-CTLDM303N-WN

数据表

- Die Bulk Active N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 2.5V, 4.5V 78mOhm @ 1.8A, 2.5V Surface Mount 1.2V @ 250µA 13 nC @ 4.5 V 30 V 12V 590 pF @ 10 V - - Die - - -55°C ~ 150°C (TJ)
CP373-CMPDM303-CT20

CP373-CMPDM303-CT20

MOSFET TRANSISTOR N-CH CHIP

Central Semiconductor Corp

6,231 -
CP373-CMPDM303-CT20

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
CP373-CMPDM303NH-CT

CP373-CMPDM303NH-CT

MOSFET N-CH 30V 3.6A DIE

Central Semiconductor Corp

2,859 -
CP373-CMPDM303NH-CT

数据表

- Die Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 2.5V, 4.5V 78mOhm @ 1.8A, 2.5V Surface Mount 1.2V @ 250µA 13 nC @ 4.5 V 30 V 12V 590 pF @ 10 V - - Die - - -55°C ~ 150°C (TJ)
CP373-CMPDM303NH-WN

CP373-CMPDM303NH-WN

MOSFET N-CH 30V 3.6A DIE

Central Semiconductor Corp

9,603 -
CP373-CMPDM303NH-WN

数据表

- Die Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 2.5V, 4.5V 78mOhm @ 1.8A, 2.5V Surface Mount 1.2V @ 250µA 13 nC @ 4.5 V 30 V 12V 590 pF @ 10 V - - Die - - -55°C ~ 150°C (TJ)
CP373-CTLDM303N-CT

CP373-CTLDM303N-CT

MOSFET N-CH 30V 3.6A DIE

Central Semiconductor Corp

5,437 -
CP373-CTLDM303N-CT

数据表

- Die Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 2.5V, 4.5V 78mOhm @ 1.8A, 2.5V Surface Mount 1.2V @ 250µA 13 nC @ 4.5 V 30 V 12V 590 pF @ 10 V - - Die - - -55°C ~ 150°C (TJ)
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