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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
UPA1912TE(0)-T1-AT

UPA1912TE(0)-T1-AT

MOSFET P-CH 12V 4.5A SC95

Renesas Electronics Corporation

4,011 -
UPA1912TE(0)-T1-AT

数据表

- SC-95 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 2.5V, 4.5V 50mOhm @ 2.5A, 4.5V Surface Mount 1.5V @ 1mA 5.6 nC @ 4 V 12 V ±10V 810 pF @ 10 V - - SC-95 - 200mW (Ta) 150°C
FQD19N10LTF

FQD19N10LTF

MOSFET N-CH 100V 15.6A DPAK

onsemi

2,656 -
FQD19N10LTF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15.6A (Tc) 5V, 10V 100mOhm @ 7.8A, 10V Surface Mount 2V @ 250µA 18 nC @ 5 V 100 V ±20V 870 pF @ 25 V - - TO-252AA - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
TSM4NB65CH C5G

TSM4NB65CH C5G

MOSFET N-CHANNEL 650V 4A TO251

Taiwan Semiconductor Corporation

2,646 -
TSM4NB65CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3.37Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 13.46 nC @ 10 V 650 V ±30V 549 pF @ 25 V - - TO-251 (IPAK) - 70W (Tc) -55°C ~ 150°C (TJ)
NTHL080N120SC1

NTHL080N120SC1

SICFET N-CH 1200V 44A TO247-3

onsemi

4,038 -
NTHL080N120SC1

数据表

- TO-247-3 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 44A (Tc) 20V 110mOhm @ 20A, 20V Through Hole 4.3V @ 5mA 56 nC @ 20 V 1200 V +25V, -15V 1670 pF @ 800 V - - TO-247-3 - 348W (Tc) -55°C ~ 150°C (TJ)
DMTH6006SPS-13

DMTH6006SPS-13

MOSFET N-CH 60V PWRDI5060

Diodes Incorporated

3,262 -
DMTH6006SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.8A (Ta), 100A (Tc) 10V 6.2mOhm @ 10.5A, 10V Surface Mount 4V @ 250µA 27.9 nC @ 10 V 60 V ±20V 1721 pF @ 30 V - - PowerDI5060-8 - 2.94W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
FDN337N-F169

FDN337N-F169

MOSFET N-CH 30V 2.2A SOT23-3

onsemi

6,158 -
FDN337N-F169

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.2A (Ta) 2.5V, 4.5V 65mOhm @ 2.2A, 4.5V Surface Mount 1V @ 250µA 9 nC @ 4.5 V 30 V ±8V 300 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
FDN360P-NBGT003B

FDN360P-NBGT003B

MOSFET P-CH 30V 2A SOT23-3

onsemi

8,677 -
FDN360P-NBGT003B

数据表

PowerTrench® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2A (Ta) 4.5V, 10V 80mOhm @ 2A, 10V Surface Mount 3V @ 250µA 9 nC @ 10 V 30 V ±20V 298 pF @ 15 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
NDS355AN-F169

NDS355AN-F169

MOSFET N-CH 30V 1.7A SOT23-3

onsemi

6,911 -
NDS355AN-F169

数据表

- TO-236-3, SC-59, SOT-23-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 4.5V, 10V 85mOhm @ 1.9A, 10V Surface Mount 2V @ 250µA 5 nC @ 5 V 30 V ±20V 195 pF @ 15 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
NDS355AN-NB9L007A

NDS355AN-NB9L007A

MOSFET N-CH 30V 1.7A SOT23-3

onsemi

6,526 -
NDS355AN-NB9L007A

数据表

- TO-236-3, SC-59, SOT-23-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 4.5V, 10V 85mOhm @ 1.9A, 10V Surface Mount 2V @ 250µA 5 nC @ 5 V 30 V ±20V 195 pF @ 15 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
NDS356AP-NB8L005A

NDS356AP-NB8L005A

MOSFET P-CH 30V 1.1A SOT23-3

onsemi

9,897 -
NDS356AP-NB8L005A

数据表

- TO-236-3, SC-59, SOT-23-3 Tray Obsolete P-Channel MOSFET (Metal Oxide) 1.1A (Ta) 4.5V, 10V 200mOhm @ 1.3A, 10V Surface Mount 2.5V @ 250µA 4.4 nC @ 5 V 30 V ±20V 280 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
TK12P60W,RVQ(S

TK12P60W,RVQ(S

MOSFET N-CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage

3,909 -
TK12P60W,RVQ(S

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V Surface Mount 3.7V @ 600µA 25 nC @ 10 V 600 V ±30V 890 pF @ 300 V - - DPAK - 100W (Tc) 150°C
TK1P90A,LQ(CO

TK1P90A,LQ(CO

MOSFET N-CH 900V 1A PW-MOLD

Toshiba Semiconductor and Storage

3,853 -
TK1P90A,LQ(CO

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Ta) 10V 9Ohm @ 500mA, 10V Surface Mount 4V @ 1mA 13 nC @ 10 V 900 V ±30V 320 pF @ 25 V - - PW-MOLD - 20W (Tc) 150°C
TK2P60D(TE16L1,NV)

TK2P60D(TE16L1,NV)

MOSFET N-CH 600V 2A PW-MOLD

Toshiba Semiconductor and Storage

5,540 -
TK2P60D(TE16L1,NV)

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 4.3Ohm @ 1A, 10V Surface Mount 4.4V @ 1mA 7 nC @ 10 V 600 V ±30V 280 pF @ 25 V - - PW-MOLD - 60W (Tc) 150°C
2N7002-7-F-79

2N7002-7-F-79

MOSFET N-CH 60V SOT23-3

Diodes Incorporated

6,138 -
2N7002-7-F-79

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
2N7002-7-G

2N7002-7-G

MOSFET N-CH 60V SOT23-3

Diodes Incorporated

4,074 -
2N7002-7-G

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
2N7002E-7-G

2N7002E-7-G

MOSFET N-CH 60V SOT23

Diodes Incorporated

7,956 -
2N7002E-7-G

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
2N7002KX-7

2N7002KX-7

MOSFET N-CH 60V SOT23-3

Diodes Incorporated

9,559 -
2N7002KX-7

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NTD85N02RG

NTD85N02RG

MOSFET N-CH 24V 12A/85A DPAK

onsemi

6,372 -
NTD85N02RG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 85A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V Surface Mount 2V @ 250µA 17.7 nC @ 5 V 24 V ±20V 2050 pF @ 20 V - - DPAK - 1.25W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ)
DMN2005UFGQ-13

DMN2005UFGQ-13

MOSFET N-CH 20V 18A PWRDI3333

Diodes Incorporated

4,077 -
DMN2005UFGQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 50A (Tc) 2.5V, 4.5V 4.6mOhm @ 13.5A, 4.5V Surface Mount 1.2V @ 250µA 164 nC @ 10 V 20 V ±12V 6495 pF @ 10 V AEC-Q101 - POWERDI3333-8 Automotive 1.05W (Ta) -55°C ~ 150°C (TJ)
BUK7Y07-30B,115

BUK7Y07-30B,115

MOSFET N-CH 30V 75A LFPAK56

Nexperia USA Inc.

7,269 -
BUK7Y07-30B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 7mOhm @ 25A, 10V Surface Mount 4V @ 1mA 31 nC @ 10 V 30 V ±20V 1773 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 105W (Tc) -55°C ~ 175°C (TJ)
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