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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMT10H9M9LPSW-13

DMT10H9M9LPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

3,737 -
DMT10H9M9LPSW-13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TSM2311CX-01 RFG

TSM2311CX-01 RFG

MOSFET P-CH 20V 4A SOT23

Taiwan Semiconductor Corporation

5,732 -
TSM2311CX-01 RFG

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4A (Ta) 2.5V, 4.5V 55mOhm @ 4A, 4.5V Surface Mount 1.4V @ 250µA 9 nC @ 4.5 V 20 V ±8V 640 pF @ 6 V - - SOT-23 - 900mW (Ta) -55°C ~ 150°C (TJ)
TSM180N03CS

TSM180N03CS

30V, 9A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

8,188 -
TSM180N03CS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 4.5V, 10V 18mOhm @ 8A, 10V Surface Mount 2V @ 250µA 4.1 nC @ 4.5 V 30 V ±20V 345 pF @ 25 V - - 8-SOP - 2.5W (Tc) 150°C (TJ)
DMP27M1UPSWQ-13

DMP27M1UPSWQ-13

MOSFET BVDSS: 8V~24V POWERDI5060

Diodes Incorporated

3,728 -
DMP27M1UPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 84A (Tc) 2.5V, 10V 5.5mOhm @ 15A, 10V Surface Mount, Wettable Flank 1.3V @ 250µA 123 nC @ 10 V 20 V ±12V 4777 pF @ 10 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 1.95W (Ta), 3.57W (Tc) -55°C ~ 150°C (TJ)
DMP26M1UPSWQ-13

DMP26M1UPSWQ-13

MOSFET BVDSS: 8V~24V POWERDI5060

Diodes Incorporated

8,078 -
DMP26M1UPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 83A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V Surface Mount, Wettable Flank 1V @ 250µA 164 nC @ 10 V 20 V ±10V 5392 pF @ 10 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 1.9W (Ta), 2.6W (Tc) -55°C ~ 150°C (TJ)
PJP2NA60_T0_00001

PJP2NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

3,204 -
PJP2NA60_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 4.4Ohm @ 1A, 10V Through Hole 4V @ 250µA 5.7 nC @ 10 V 600 V ±30V 257 pF @ 25 V - - TO-220AB - 44W (Tc) -55°C ~ 150°C (TJ)
PJD12P06-AU_L2_000A1

PJD12P06-AU_L2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,787 -
PJD12P06-AU_L2_000A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 2.6A (Ta), 12A (Tc) 10V 155mOhm @ 6A, 10V Surface Mount 4V @ 250µA 10.9 nC @ 10 V 60 V ±20V 385 pF @ 25 V AEC-Q101 - TO-252AA Automotive 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FQD1P50TF

FQD1P50TF

MOSFET P-CH 500V 1.2A DPAK

onsemi

9,323 -
FQD1P50TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.2A (Tc) 10V 10.5Ohm @ 600mA, 10V Surface Mount 5V @ 250µA 14 nC @ 10 V 500 V ±30V 350 pF @ 25 V - - TO-252AA - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ)
RFP3055LE

RFP3055LE

MOSFET N-CH 60V 11A TO220-3

onsemi

3,256 -
RFP3055LE

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 5V 107mOhm @ 8A, 5V Through Hole 3V @ 250µA 11.3 nC @ 10 V 60 V ±16V 350 pF @ 25 V - - TO-220-3 - 38W (Tc) -55°C ~ 175°C (TJ)
DMT6005LFG-7

DMT6005LFG-7

MOSFET N-CH 60V PWRDI3333

Diodes Incorporated

2,312 -
DMT6005LFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 100A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 48.7 nC @ 10 V 60 V ±20V 3150 pF @ 30 V - - POWERDI3333-8 - 1.98W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ)
STD17NF03L-1

STD17NF03L-1

MOSFET N-CH 30V 17A IPAK

STMicroelectronics

7,792 -
STD17NF03L-1

数据表

STripFET™ II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 5V, 10V 50mOhm @ 8.5A, 10V Through Hole 2.2V @ 250µA 6.5 nC @ 5 V 30 V ±16V 320 pF @ 25 V - - TO-251 (IPAK) - 30W (Tc) -55°C ~ 175°C (TJ)
STU6N65K3

STU6N65K3

MOSFET N-CH 650V 5.4A IPAK

STMicroelectronics

6,023 -
STU6N65K3

数据表

SuperMESH3™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.4A (Tc) 10V 1.3Ohm @ 2.7A, 10V Through Hole 4.5V @ 50µA 33 nC @ 10 V 650 V ±30V 880 pF @ 50 V - - TO-251 (IPAK) - 110W (Tc) 150°C (TJ)
ZXMP6A13GQTA

ZXMP6A13GQTA

MOSFET BVDSS: 41V 60V SOT223

Diodes Incorporated

4,740 -
ZXMP6A13GQTA

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active - - - - - Surface Mount - - - - - - - SOT-223-3 - - -
DMT10H015LCG-13

DMT10H015LCG-13

MOSFET N-CH 100V 9.4A/34A 8DFN

Diodes Incorporated

3,632 -
DMT10H015LCG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.4A (Ta), 34A (Tc) 4.5V, 10V 15mOhm @ 20A, 10V Surface Mount 3.5V @ 250µA 33.3 nC @ 10 V 100 V ±20V 1871 pF @ 50 V - - V-DFN3333-8 - 1W (Ta) -55°C ~ 155°C (TJ)
SPU09P06PL

SPU09P06PL

MOSFET P-CH 60V 9.7A TO251-3

Infineon Technologies

9,939 -
SPU09P06PL

数据表

SIPMOS® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 9.7A (Tc) 4.5V, 10V 250mOhm @ 6.8A, 10V Through Hole 2V @ 250µA 21 nC @ 10 V 60 V ±20V 450 pF @ 25 V - - P-TO251-3-1 - 42W (Tc) -55°C ~ 175°C (TJ)
FQPF14N15

FQPF14N15

MOSFET N-CH 150V 9.8A TO220F

onsemi

4,799 -
FQPF14N15

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.8A (Tc) 10V 210mOhm @ 4.9A, 10V Through Hole 4V @ 250µA 23 nC @ 10 V 150 V ±25V 715 pF @ 25 V - - TO-220F-3 - 48W (Tc) -55°C ~ 175°C (TJ)
DMT64M8LCG-13

DMT64M8LCG-13

MOSFET BVDSS: 61V~100V V-DFN3333

Diodes Incorporated

8,181 -
DMT64M8LCG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16.1A (Ta), 77.8A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V Surface Mount 2.4V @ 250µA 47.5 nC @ 10 V 60 V ±20V 2664 pF @ 30 V - - V-DFN3333-8 (Type B) - 990mW (Ta) -55°C ~ 150°C (TJ)
TSM180N03PQ33

TSM180N03PQ33

30V, 25A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

8,508 -
TSM180N03PQ33

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 4.1 nC @ 4.5 V 30 V ±20V 345 pF @ 25 V - - 8-PDFN (3.1x3.1) - 21W (Tc) 150°C (TJ)
AOL1700

AOL1700

MOSFET N-CH 30V 17A/85A ULTRASO8

Alpha & Omega Semiconductor Inc.

7,997 -
AOL1700

数据表

SRFET™ 3-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta), 85A (Tc) 4.5V, 10V 4.2mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 74 nC @ 10 V 30 V ±20V 4512 pF @ 15 V - Schottky Diode (Body) UltraSO-8™ - 2.1W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
AO4482

AO4482

MOSFET N-CH 100V 6A 8SOIC

Alpha & Omega Semiconductor Inc.

4,462 -
AO4482

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 37mOhm @ 6A, 10V Surface Mount 2.7V @ 250µA 44 nC @ 10 V 100 V ±20V 2000 pF @ 50 V - - 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
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