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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SPP04N50C3HKSA1

SPP04N50C3HKSA1

MOSFET N-CH 560V 4.5A TO220-3

Infineon Technologies

5,718 -
SPP04N50C3HKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V Through Hole 3.9V @ 200µA 22 nC @ 10 V 560 V ±20V 470 pF @ 25 V - - PG-TO220-3-1 - 50W (Tc) -55°C ~ 150°C (TJ)
DMN62D1LFDQ-7

DMN62D1LFDQ-7

MOSFET N-CH 60V 400MA 3DFN T&R 3

Diodes Incorporated

4,502 -
DMN62D1LFDQ-7

数据表

- 3-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400mA (Ta) 1.5V, 4V 2Ohm @ 100mA, 4V Surface Mount 1V @ 250µA 0.55 nC @ 4.5 V 60 V ±20V 36 pF @ 25 V AEC-Q101 - U-DFN1212-3 (Type C) Automotive 500mW -55°C ~ 150°C (TJ)
FDB8874

FDB8874

MOSFET N-CH 30V 21A/121A TO263AB

onsemi

3,699 -
FDB8874

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta), 121A (Tc) 4.5V, 10V 4.7mOhm @ 40A, 10V Surface Mount 2.5V @ 250µA 72 nC @ 10 V 30 V ±20V 3130 pF @ 15 V - - TO-263 (D2PAK) - 110W (Tc) -55°C ~ 175°C (TJ)
DMN3018SFG-7

DMN3018SFG-7

MOSFET N-CH 30V 8.5A PWRDI3333-8

Diodes Incorporated

3,640 -
DMN3018SFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.5A (Ta) 4.5V, 10V 21mOhm @ 10A, 10V Surface Mount 2.1V @ 250µA 13.2 nC @ 10 V 30 V ±25V 697 pF @ 15 V - - POWERDI3333-8 - 1W (Ta) -55°C ~ 150°C (TJ)
SSM3J118TU,LF

SSM3J118TU,LF

PB-F SMALL LOW ON RESISTANCE PCH

Toshiba Semiconductor and Storage

2,194 -
SSM3J118TU,LF

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.4A (Ta) 4V, 10V 240mOhm @ 650mA, 10V Surface Mount 2.6V @ 1mA - 30 V ±20V 137 pF @ 15 V - - UFM - 500mW (Ta) 150°C
DMN2024U-13

DMN2024U-13

MOSFET N-CH 20V 6.8A SOT23 T&R 1

Diodes Incorporated

9,900 -
DMN2024U-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.8A (Ta) 1.8V, 4.5V 25mOhm @ 6.5A, 4.5V Surface Mount 900mV @ 250µA 7.1 nC @ 4.5 V 20 V ±10V 647 pF @ 10 V - - SOT-23-3 - 800mW -55°C ~ 150°C (TJ)
MCM012N04L-TP

MCM012N04L-TP

N-CHANNEL MOSFET,DFN2020-6LE

Micro Commercial Co

6,000 -
MCM012N04L-TP

数据表

- 6-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 12mOhm @ 9A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 40 V ±20V 990 pF @ 25 V - - DFN2020-6LE - 1.8W (Tj) -55°C ~ 150°C (TJ)
XP236N2001TR-G

XP236N2001TR-G

MOSFET N-CH 30V 2A SOT23

Torex Semiconductor Ltd

3,045 -
XP236N2001TR-G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 2.5V, 4.5V 110mOhm @ 1A, 4.5V Surface Mount 1.1V @ 250µA 4.1 nC @ 6 V 30 V ±8V 230 pF @ 10 V - - SOT-23 - 400mW (Ta) 150°C (TJ)
DMN2004WKQ-7

DMN2004WKQ-7

MOSFET N-CH 20V 540MA SOT323

Diodes Incorporated

2,659 -
DMN2004WKQ-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 540mA (Ta) 1.8V, 4.5V 550mOhm @ 540mA, 4.5V Surface Mount 1V @ 250µA - 20 V ±8V 150 pF @ 16 V AEC-Q101 - SOT-323 Automotive 200mW (Ta) -55°C ~ 150°C (TJ)
AUIRFZ24NSTRR

AUIRFZ24NSTRR

MOSFET N-CH 55V 17A DPAK

Infineon Technologies

7,343 -
AUIRFZ24NSTRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 70mOhm @ 10A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 55 V ±20V 370 pF @ 25 V - - TO-252AA (DPAK) - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
DMP2065UQ-7

DMP2065UQ-7

MOSFET BVDSS: 8V~24V SOT23 T&R 3

Diodes Incorporated

2,417 -
DMP2065UQ-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.8V, 4.5V 60mOhm @ 4.2A, 4.5V Surface Mount 900mV @ 250µA 10.2 nC @ 4.5 V 20 V ±12V 808 pF @ 15 V AEC-Q101 - SOT-23-3 Automotive 900mW -55°C ~ 150°C (TJ)
XP10NA8R4MT

XP10NA8R4MT

MOSFET N CH 100V 17.8A PMPAK5X6

YAGEO XSEMI

7,619 -
XP10NA8R4MT

数据表

XP10NA8R4 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.8A (Ta), 66.5A (Tc) 10V 8.4mOhm @ 12A, 10V Surface Mount 4V @ 250µA 68.8 nC @ 10 V 100 V ±20V 3264 pF @ 80 V - - 8-PMPAK (5x6) - 5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
XP60PN72REN

XP60PN72REN

MOSFET N-CH 600V 53MA SOT23

YAGEO XSEMI

2,365 -
XP60PN72REN

数据表

XP60PN72 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 53mA (Ta) 10V 72Ohm @ 50mA, 10V Surface Mount 5V @ 250µA 4 nC @ 10 V 600 V ±20V 80 pF @ 100 V - - SOT-23 - 500mW (Ta) -55°C ~ 150°C (TJ)
XP10NA8R2LMT

XP10NA8R2LMT

MOSFET N CH 100V 17.7A PMPAK

YAGEO XSEMI

6,063 -
XP10NA8R2LMT

数据表

XP10NA8R2L 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.7A (Ta), 66A (Tc) 4.5V, 10V 8.2mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 68.8 nC @ 10 V 100 V ±20V 2720 pF @ 80 V - - 8-PMPAK (5x6) - 5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
DMP3050LVTQ-7

DMP3050LVTQ-7

MOSFET BVDSS: 25V~30V TSOT26 T&R

Diodes Incorporated

2,278 -
DMP3050LVTQ-7

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 50mOhm @ 4.5A, 10V Surface Mount 2V @ 250µA 10.5 nC @ 10 V 30 V ±25V 620 pF @ 15 V AEC-Q101 - TSOT-26 Automotive 1.6W (Ta) -55°C ~ 150°C (TJ)
MTP3055V

MTP3055V

MOSFET N-CH 60V 12A TO220AB

onsemi

5,462 -
MTP3055V

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 150mOhm @ 6A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 60 V ±20V 500 pF @ 25 V - - TO-220 - 48W (Tc) -55°C ~ 175°C (TJ)
IRFR024NTRR

IRFR024NTRR

MOSFET N-CH 55V 17A DPAK

Infineon Technologies

7,120 -
IRFR024NTRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 75mOhm @ 10A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 55 V ±20V 370 pF @ 25 V - - TO-252AA (DPAK) - 45W (Tc) -55°C ~ 175°C (TJ)
NTNS3166NZT5G

NTNS3166NZT5G

MOSFET N-CH 20V 0.361A SOT883

onsemi

8,000 -
NTNS3166NZT5G

数据表

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 361mA (Ta) 1.5V, 4.5V 700mOhm @ 200mA, 4.5V Surface Mount 1V @ 250µA 0.8 nC @ 4.5 V 20 V ±8V 24 pF @ 10 V - - SOT-883 (XDFN3) (1x0.6) - 155mW (Ta) -55°C ~ 150°C (TJ)
DMN25D0UFA-7B

DMN25D0UFA-7B

MOSFET N-CH 25V 240MA 3DFN

Diodes Incorporated

6,980 -
DMN25D0UFA-7B

数据表

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240mA (Ta) 2.7V, 4.5V 4Ohm @ 400mA, 4.5V Surface Mount 1.2V @ 250µA 0.36 nC @ 4.5 V 25 V 8V 27.9 pF @ 10 V - - X2-DFN0806-3 - 280mW (Ta) -55°C ~ 150°C (TJ)
IRFR9024NTRL

IRFR9024NTRL

MOSFET P-CH 55V 11A DPAK

Infineon Technologies

9,215 -
IRFR9024NTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 175mOhm @ 6.6A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 55 V ±20V 350 pF @ 25 V - - TO-252AA (DPAK) - 38W (Tc) -55°C ~ 150°C (TJ)
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