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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMN2055U-7

DMN2055U-7

MOSFET N-CH 20V 4.8A SOT23 T&R 3

Diodes Incorporated

2,686 -
DMN2055U-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.8A (Ta) 2.5V, 4.5V 38mOhm @ 3.6A, 4.5V Surface Mount 1V @ 250µA 4.3 nC @ 4.5 V 20 V ±8V 400 pF @ 10 V - - SOT-23-3 - 800mW (Ta) -55°C ~ 150°C (TJ)
DMP3165LQ-7

DMP3165LQ-7

MOSFET BVDSS: 25V~30V SOT23 T&R

Diodes Incorporated

2,568 -
DMP3165LQ-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.3A (Ta) 4.5V, 10V 90mOhm @ 2.7A, 10V Surface Mount 2.1V @ 250µA 2 nC @ 10 V 30 V ±20V 300 pF @ 10 V AEC-Q101 - SOT-23-3 Automotive 800mW (Ta) -55°C ~ 150°C (TJ)
SSM5N15FE(TE85L,F)

SSM5N15FE(TE85L,F)

MOSFET N-CH 30V 100MA ESV

Toshiba Semiconductor and Storage

2,105 -
SSM5N15FE(TE85L,F)

数据表

π-MOSVI SOT-553 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V Surface Mount 1.5V @ 100µA - 30 V ±20V 7.8 pF @ 3 V - - ESV - 150mW (Ta) 150°C (TJ)
DMP3165L-7

DMP3165L-7

MOSFET P-CH 30V 3.3A SOT23 T&R

Diodes Incorporated

1,919 -
DMP3165L-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.3A (Ta) 4.5V, 10V 90mOhm @ 2.7A, 10V Surface Mount 2.1V @ 250µA 2 nC @ 10 V 30 V ±20V 300 pF @ 10 V - - SOT-23-3 - 800mW (Ta) -55°C ~ 150°C (TJ)
DMN60H080DS-13

DMN60H080DS-13

MOSFET N-CH 600V 80MA SOT23-3

Diodes Incorporated

6,050 -
DMN60H080DS-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80mA (Ta) 4.5V, 10V 100Ohm @ 60mA, 10V Surface Mount 3V @ 250µA 1.7 nC @ 10 V 600 V ±20V 25 pF @ 25 V - - SOT-23-3 - 1.1W (Ta) -55°C ~ 150°C (TJ)
DMP2065U-7

DMP2065U-7

MOSFET BVDSS: 8V~24V SOT23 T&R 3

Diodes Incorporated

4,297 -
DMP2065U-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.8V, 4.5V 60mOhm @ 4.2A, 4.5V Surface Mount 900mV @ 250µA 10.2 nC @ 4.5 V 20 V ±12V 808 pF @ 15 V - - SOT-23-3 - 900mW -55°C ~ 150°C (TJ)
DMP21D0UFB4-7R

DMP21D0UFB4-7R

MOSFET BVDSS: 8V~24V X2-DFN1006-

Diodes Incorporated

2,650 -
DMP21D0UFB4-7R

数据表

- 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 770mA (Ta) 1.8V, 4.5V 495mOhm @ 400mA, 4.5V Surface Mount 1V @ 250µA 1.5 nC @ 8 V 20 V ±8V 76.5 pF @ 10 V - - X2-DFN1006-3 - 430mW (Ta) -55°C ~ 150°C (TJ)
DMN21D2UFB-7

DMN21D2UFB-7

MOSFET BVDSS: 8V~24V X1-DFN1006-

Diodes Incorporated

2,290 -
DMN21D2UFB-7

数据表

- 3-UFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 760mA (Ta) 1.5V, 4.5V 990mOhm @ 100mA, 4.5V Surface Mount 1V @ 250µA 0.93 nC @ 10 V 20 V ±12V 27.6 pF @ 16 V - - X1-DFN1006-3 - 380mW (Ta) -55°C ~ 150°C (TJ)
PJA3416-AU_R1_000A1

PJA3416-AU_R1_000A1

20V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

1,627 -
PJA3416-AU_R1_000A1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.8A (Ta) 1.8V, 4.5V 27mOhm @ 5.8A, 4.5V Surface Mount 1.2V @ 250µA 6.7 nC @ 4.5 V 20 V ±12V 513 pF @ 10 V AEC-Q101 - SOT-23 Automotive 1.25W (Ta) -55°C ~ 150°C (TJ)
DMP2165UW-13

DMP2165UW-13

MOSFET P-CH 20V 2.5A SOT323 T&R

Diodes Incorporated

18,000 -
DMP2165UW-13

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 1.8V, 4.5V 90mOhm @ 1.5A, 4.5V Surface Mount 1V @ 250µA 3.5 nC @ 4.5 V 20 V ±12V 335 pF @ 15 V - - SOT-323 - 500mW (Ta) -55°C ~ 150°C (TJ)
DMN32D0LFB4-7B

DMN32D0LFB4-7B

MOSFET BVDSS: 25V-30V X2-DFN1006

Diodes Incorporated

4,858 -
DMN32D0LFB4-7B

数据表

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 440mA (Ta) 1.8V, 2.5V, 4.5V 1.2Ohm @ 100mA, 4V Surface Mount 1.2V @ 250µA 0.6 nC @ 4.5 V 30 V ±10V 44.8 pF @ 15 V - - X2-DFN1006-3 - 350mW (Ta) -55°C ~ 150°C (TJ)
RJK005N03FRAT146

RJK005N03FRAT146

MOSFET N-CH 30V 500MA SMT3

Rohm Semiconductor

3,020 -
RJK005N03FRAT146

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 500mA (Ta) 2.5V, 4.5V 580mOhm @ 500mA, 4.5V Surface Mount 1.5V @ 1mA 4 nC @ 4 V 30 V ±12V 60 pF @ 10 V AEC-Q101 - SMT3 Automotive 200mW (Ta) 150°C (TJ)
DMP2170U-7

DMP2170U-7

MOSFET P-CH 20V 3.1A SOT23

Diodes Incorporated

1,043 -
DMP2170U-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.1A (Ta) 2.5V, 4.5V 90mOhm @ 3.5A, 4.5V Surface Mount 1.25V @ 250µA 7.8 nC @ 10 V 20 V ±12V 303 pF @ 10 V AEC-Q101 - SOT-23-3 Automotive 780mW (Ta) -55°C ~ 150°C (TJ)
BSF077N06NT3GXUMA1

BSF077N06NT3GXUMA1

MOSFET N-CH 60V 13A/56A 2WDSON

Infineon Technologies

9,540 -
BSF077N06NT3GXUMA1

数据表

OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 56A (Tc) 10V 7.7mOhm @ 30A, 10V Surface Mount 4V @ 33µA 46 nC @ 10 V 60 V ±20V 3700 pF @ 30 V - - MG-WDSON-2, CanPAK M™ - 2.2W (Ta), 38W (Tc) -40°C ~ 150°C (TJ)
IRFZ44EPBF

IRFZ44EPBF

MOSFET N-CH 60V 48A TO220AB

Infineon Technologies

3,393 -
IRFZ44EPBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 23mOhm @ 29A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 60 V ±20V 1360 pF @ 25 V - - TO-220AB - 110W (Tc) -55°C ~ 175°C (TJ)
NVMFS6B25NLT1G

NVMFS6B25NLT1G

MOSFET N-CH 100V 8A/33A 5DFN

onsemi

2,346 -
NVMFS6B25NLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Ta), 33A (Ta) 4.5V, 10V 24mOhm @ 20A, 10V Surface Mount 3V @ 250µA 13.5 nC @ 10 V 100 V ±16V 905 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.6W (Ta), 62W (Tc) -55°C ~ 175°C (TJ)
FDB6670AS

FDB6670AS

MOSFET N-CH 30V 62A TO263AB

onsemi

7,551 -
FDB6670AS

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 62A (Ta) 4.5V, 10V 8.5mOhm @ 31A, 10V Surface Mount 3V @ 1mA 39 nC @ 15 V 30 V ±20V 1570 pF @ 15 V - - TO-263 (D2PAK) - 62.5W (Tc) -55°C ~ 150°C (TJ)
FQB55N06TM

FQB55N06TM

MOSFET N-CH 60V 55A D2PAK

onsemi

4,720 -
FQB55N06TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 20mOhm @ 27.5A, 10V Surface Mount 4V @ 250µA 46 nC @ 10 V 60 V ±25V 1690 pF @ 25 V - - TO-263 (D2PAK) - 3.75W (Ta), 133W (Tc) -55°C ~ 175°C (TJ)
FDT434P

FDT434P

MOSFET P-CH 20V 6A SOT223-4

onsemi

6,946 -
FDT434P

数据表

PowerTrench® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6A (Ta) 2.5V, 4.5V 50mOhm @ 6A, 4.5V Surface Mount 1V @ 250µA 19 nC @ 4.5 V 20 V ±8V 1187 pF @ 10 V - - SOT-223-4 - 3W (Ta) -55°C ~ 150°C (TJ)
FQPF9N25CT

FQPF9N25CT

MOSFET N-CH 250V 8.8A TO220F

onsemi

2,571 -
FQPF9N25CT

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 250 V ±30V 710 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 150°C (TJ)
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