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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI7634BDP-T1-E3

SI7634BDP-T1-E3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix

7,579 -
SI7634BDP-T1-E3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 5.4mOhm @ 15A, 10V Surface Mount 2.6V @ 250µA 68 nC @ 10 V 30 V ±20V 3150 pF @ 15 V - - PowerPAK® SO-8 - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
R5005CNX

R5005CNX

MOSFET N-CH 500V 5A TO220

Rohm Semiconductor

5,810 -
R5005CNX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.6Ohm @ 2.5A, 10V Through Hole 4.5V @ 1mA 10.8 nC @ 10 V 500 V ±30V 320 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
PSMN0R9-30ULDX

PSMN0R9-30ULDX

MOSFET N-CH 30V 300A LFPAK56

Nexperia USA Inc.

4,315 -
PSMN0R9-30ULDX

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300A (Tc) 4.5V, 10V 0.87mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 109 nC @ 10 V 30 V ±20V 7668 pF @ 15 V - - LFPAK56, Power-SO8 - 227W (Tc) -55°C ~ 150°C (TJ)
SIR800DP-T1-RE3

SIR800DP-T1-RE3

MOSFET N-CH 20V 50A PPAK SO-8

Vishay Siliconix

2,145 -
SIR800DP-T1-RE3

数据表

TrenchFET® Gen III PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 2.5V, 10V 2.3mOhm @ 15A, 10V Surface Mount 1.5V @ 250µA 133 nC @ 10 V 20 V ±12V 5125 pF @ 10 V - - PowerPAK® SO-8 - 69W (Tc) -55°C ~ 150°C (TJ)
STD37P3H6AG

STD37P3H6AG

MOSFET P-CH 30V 49A DPAK

STMicroelectronics

3,778 -
STD37P3H6AG

数据表

STripFET™ H6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 15mOhm @ 25A, 10V Surface Mount 4V @ 250µA 30.6 nC @ 10 V 30 V ±20V 1630 pF @ 25 V AEC-Q101 - DPAK Automotive 60W (Tc) -55°C ~ 175°C (TJ)
PJF60R620E_T0_00001

PJF60R620E_T0_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

2,458 -
PJF60R620E_T0_00001

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 1.2A (Ta), 7A (Tc) 10V 620mOhm @ 2.4A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 600 V ±20V 457 pF @ 25 V - - ITO-220AB - 1.04W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
TSM7NC60CF C0G

TSM7NC60CF C0G

MOSFET N-CH 600V 7A ITO220S

Taiwan Semiconductor Corporation

6,957 -
TSM7NC60CF C0G

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.2Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 24 nC @ 10 V 600 V ±30V 1169 pF @ 50 V - - ITO-220S - 44.6W (Tc) -55°C ~ 150°C (TJ)
SQJ412EP-T2_GE3

SQJ412EP-T2_GE3

MOSFET N-CH 40V 32A PPAK SO-8

Vishay Siliconix

9,412 -
SQJ412EP-T2_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 4.5V, 10V 4.1mOhm @ 10.3A, 10V Surface Mount 2.5V @ 250µA 120 nC @ 10 V 40 V ±20V 5950 pF @ 20 V AEC-Q101 - PowerPAK® SO-8 Automotive 83W (Tc) -55°C ~ 175°C (TJ)
AOSP66919

AOSP66919

N

Alpha & Omega Semiconductor Inc.

8,190 -
AOSP66919

数据表

AlphaSGT™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 6.5mOhm @ 16A, 10V Surface Mount 2.6V @ 250µA 66 nC @ 10 V 100 V ±20V 3420 pF @ 50 V - - 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
STD7N60M6

STD7N60M6

DISCRETE

STMicroelectronics

2,714 -
STD7N60M6

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 5.8A (Tc) 10V 900mOhm @ 2.5A, 10V Surface Mount 4.75V @ 250µA 5.1 nC @ 10 V 600 V ±25V 237 pF @ 100 V - - TO-252 (DPAK) - 72W (Tc) -55°C ~ 150°C (TJ)
PJP5NA80_T0_00001

PJP5NA80_T0_00001

800V N-CHANNEL MOSFET

Panjit International Inc.

3,000 -
PJP5NA80_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 2.7Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 800 V ±30V 660 pF @ 25 V - - TO-220AB - 146W (Tc) -55°C ~ 150°C (TJ)
SPP03N60S5HKSA1

SPP03N60S5HKSA1

MOSFET N-CH 600V 3.2A TO220-3

Infineon Technologies

4,857 -
SPP03N60S5HKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V Through Hole 5.5V @ 135µA 16 nC @ 10 V 600 V ±20V 420 pF @ 25 V - - PG-TO220-3-1 - 38W (Tc) -55°C ~ 150°C (TJ)
AOY66919

AOY66919

N

Alpha & Omega Semiconductor Inc.

5,285 -
AOY66919

数据表

AlphaSGT™ TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 70A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Through Hole 2.6V @ 250µA 66 nC @ 10 V 100 V ±20V 3420 pF @ 50 V - - TO-251B - 6.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
BS7067N06LS3G

BS7067N06LS3G

MOSFET N-CH 60V 14A/20A 8TSDSON

Infineon Technologies

9,856 -
BS7067N06LS3G

数据表

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 20A (Tc) 4.5V, 10V 6.7mOhm @ 20A, 10V Surface Mount 2.2V @ 35µA 62 nC @ 10 V 60 V ±20V 4800 pF @ 30 V - - PG-TSDSON-8 - 2.1W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
STB70NH03LT4

STB70NH03LT4

MOSFET N-CH 30V 60A D2PAK

STMicroelectronics

7,427 -
STB70NH03LT4

数据表

STripFET™ III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 5V, 10V 9.5mOhm @ 30A, 10V Surface Mount 1V @ 250µA 21 nC @ 5 V 30 V ±20V 2200 pF @ 10 V - - D2PAK - 858W (Tc) -55°C ~ 175°C (TJ)
PJW8N03_R2_00001

PJW8N03_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

1,482 -
PJW8N03_R2_00001

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta), 7.2A (Tc) 4.5V, 10V 38mOhm @ 5.6A, 10V Surface Mount 2.1V @ 250µA 7.8 nC @ 10 V 30 V ±20V 343 pF @ 15 V - - SOT-223 - 1.5W (Ta), 3W (Tc) -55°C ~ 150°C (TJ)
DMG3407SSN-7

DMG3407SSN-7

MOSFET P-CH 30V 4A SC59

Diodes Incorporated

2,594 -
DMG3407SSN-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 4.5V, 10V 50mOhm @ 4.1A, 10V Surface Mount 2.1V @ 250µA 16 nC @ 10 V 30 V ±20V 700 pF @ 15 V - - SC-59-3 - 1.1W (Ta) -55°C ~ 150°C (TJ)
SI1078X-T1-GE3

SI1078X-T1-GE3

MOSFET N-CH 30V 1.02A SOT563F

Vishay Siliconix

4,687 -
SI1078X-T1-GE3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.02A (Tc) 2.5V, 10V 142mOhm @ 1A, 10V Surface Mount 1.5V @ 250µA 3 nC @ 4.5 V 30 V ±12V 110 pF @ 15 V - - - - 240mW (Tc) -55°C ~ 150°C (TJ)
MMFTP3401-AQ

MMFTP3401-AQ

MOSFET SOT-23 P -30V -4A 0.05? 1

Diotec Semiconductor

2,875 -
MMFTP3401-AQ

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 2.5V, 10V 65mOhm @ 4A, 10V Surface Mount 1.3V @ 250µA - 30 V ±12V 954 pF @ 0 V - - SOT-23-3 (TO-236) - 1.4W (Ta) -55°C ~ 150°C (TJ)
DMN2300UFD-7

DMN2300UFD-7

MOSFET N-CH 20V 1.21A 3DFN

Diodes Incorporated

2,708 -
DMN2300UFD-7

数据表

- 3-UDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.21A (Ta) 1.5V, 4.5V 200mOhm @ 900mA, 4.5V Surface Mount 950mV @ 250µA 2 nC @ 4.5 V 20 V ±8V 67.62 pF @ 25 V - - X1-DFN1212-3 - 470mW (Ta) -55°C ~ 150°C (TJ)
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