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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI2314EDS-T1-GE3

SI2314EDS-T1-GE3

MOSFET N-CH 20V 3.77A SOT23-3

Vishay Siliconix

5,967 -
SI2314EDS-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.77A (Ta) 1.8V, 4.5V 33mOhm @ 5A, 4.5V Surface Mount 950mV @ 250µA 14 nC @ 4.5 V 20 V ±12V - - - SOT-23-3 (TO-236) - 750mW (Ta) -55°C ~ 150°C (TJ)
APT8018JN

APT8018JN

MOSFET N-CH 800V 40A ISOTOP

Microsemi Corporation

6,899 -
APT8018JN

数据表

POWER MOS IV® SOT-227-4, miniBLOC Tray Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 180mOhm @ 20A, 10V Chassis Mount 4V @ 5mA 700 nC @ 10 V 800 V ±30V 14000 pF @ 25 V - - ISOTOP® - 690W (Tc) -55°C ~ 150°C (TJ)
SI2321DS-T1-E3

SI2321DS-T1-E3

MOSFET P-CH 20V 2.9A SOT23-3

Vishay Siliconix

4,858 -
SI2321DS-T1-E3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.9A (Ta) 1.8V, 4.5V 57mOhm @ 3.3A, 4.5V Surface Mount 900mV @ 250µA 13 nC @ 4.5 V 20 V ±8V 715 pF @ 6 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
SI2321DS-T1-GE3

SI2321DS-T1-GE3

MOSFET P-CH 20V 2.9A SOT23-3

Vishay Siliconix

4,386 -
SI2321DS-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.9A (Ta) 1.8V, 4.5V 57mOhm @ 3.3A, 4.5V Surface Mount 900mV @ 250µA 13 nC @ 4.5 V 20 V ±8V 715 pF @ 6 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
TSM3443CX6

TSM3443CX6

-20V, -4.7A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

5,358 -
TSM3443CX6

数据表

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.7A (Ta) 2.5V, 4.5V 60mOhm @ 4.7A, 4.5V Surface Mount 1.4V @ 250µA 9 nC @ 4.5 V 20 V ±12V 640 pF @ 10 V - - SOT-26 - 2W (Ta) -55°C ~ 150°C (TJ)
BUK9222-100EJ

BUK9222-100EJ

MOSFET N-CH 100V DPAK

Nexperia USA Inc.

3,632 -
BUK9222-100EJ

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - AEC-Q101 - - Automotive - -
IPU060N03L G

IPU060N03L G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies

8,089 -
IPU060N03L G

数据表

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 23 nC @ 10 V 30 V ±20V 2400 pF @ 15 V - - PG-TO251-3 - 56W (Tc) -55°C ~ 175°C (TJ)
APT8075BN

APT8075BN

MOSFET N-CH 800V 13A TO247AD

Microsemi Corporation

3,045 -
APT8075BN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 750mOhm @ 6.5A, 10V Through Hole 4V @ 1mA 130 nC @ 10 V 800 V ±30V 2950 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
MCH3474-TL-E

MCH3474-TL-E

MOSFET N-CH 30V 4A SC70FL/MCPH3

onsemi

3,548 -
MCH3474-TL-E

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 1.8V, 4.5V 50mOhm @ 2A, 4.5V Surface Mount - 4.7 nC @ 4.5 V 30 V ±12V 430 pF @ 10 V - - SC-70FL/MCPH3 - 1W (Ta) 150°C (TJ)
APT58MJ50J

APT58MJ50J

MOSFET N-CH 500V 58A ISOTOP

Microsemi Corporation

8,525 -
APT58MJ50J

数据表

POWER MOS 8™ SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 65mOhm @ 42A, 10V Chassis Mount 5V @ 2.5mA 340 nC @ 10 V 500 V ±30V 13500 pF @ 25 V - - ISOTOP® - 540W (Tc) -55°C ~ 150°C (TJ)
AOL1428

AOL1428

MOSFET N-CH 30V 12.4A ULTRASO8

Alpha & Omega Semiconductor Inc.

7,472 -
AOL1428

数据表

- 3-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.4A (Ta), 49A (Tc) 4.5V, 10V 9.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 18 nC @ 10 V 30 V ±20V 1000 pF @ 15 V - - UltraSO-8™ - 2.2W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
APT10M07JVR

APT10M07JVR

MOSFET N-CH 100V 225A ISOTOP

Microsemi Corporation

7,492 -
APT10M07JVR

数据表

POWER MOS V® SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 225A (Tc) 10V - Chassis Mount 4V @ 5mA 1050 nC @ 10 V 100 V ±30V 21600 pF @ 25 V - - ISOTOP® - 700W (Tc) -55°C ~ 150°C (TJ)
NTDV2955-1G

NTDV2955-1G

MOSFET P-CH 60V 12A IPAK

onsemi

8,719 -
NTDV2955-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete - - 12A (Ta) - - Through Hole - - - - - - - IPAK - - -
APT10M11JVR

APT10M11JVR

MOSFET N-CH 100V 144A ISOTOP

Microsemi Corporation

9,886 -
APT10M11JVR

数据表

POWER MOS V® SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 144A (Tc) 10V - Chassis Mount 4V @ 2.5mA 450 nC @ 10 V 100 V ±30V 10300 pF @ 25 V - - ISOTOP® - 450W (Tc) -55°C ~ 150°C (TJ)
APT4012BVR

APT4012BVR

MOSFET N-CH 400V 37A TO247AD

Microsemi Corporation

8,956 -
APT4012BVR

数据表

POWER MOS V® TO-247-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 120mOhm @ 18.5A, 10V Through Hole 4V @ 1mA 290 nC @ 10 V 400 V ±30V 5400 pF @ 25 V - - TO-247AD - 370W (Tc) -55°C ~ 150°C (TJ)
FQP5P20

FQP5P20

MOSFET P-CH 200V 4.8A TO220-3

onsemi

3,178 -
FQP5P20

数据表

QFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 4.8A (Tc) 10V 1.4Ohm @ 2.4A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 200 V ±30V 430 pF @ 25 V - - TO-220-3 - 75W (Tc) -55°C ~ 150°C (TJ)
APT4012BVRG

APT4012BVRG

MOSFET N-CH 400V 37A TO247AD

Microsemi Corporation

5,122 -
APT4012BVRG

数据表

POWER MOS V® TO-247-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 120mOhm @ 18.5A, 10V Through Hole 4V @ 1mA 290 nC @ 10 V 400 V ±30V 5400 pF @ 25 V - - TO-247AD - 370W (Tc) -55°C ~ 150°C (TJ)
DMP2008USS-13

DMP2008USS-13

MOSFET BVDSS: 8V~24V SO-8 T&R 2.

Diodes Incorporated

3,736 -
DMP2008USS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13A (Ta), 38A (Tc) 1.8V, 4.5V 9mOhm @12A, 4.5V Surface Mount 1V @ 250µA 159 nC @ 10 V 20 V ±8V 6820 pF @ 10 V - - 8-SO - 1.4W (Ta) -55°C ~ 150°C (TJ)
APT12080JVR

APT12080JVR

MOSFET N-CH 1200V 15A ISOTOP

Microsemi Corporation

4,741 -
APT12080JVR

数据表

POWER MOS V® SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 800mOhm @ 7.5A, 10V Chassis Mount 4V @ 2.5mA 485 nC @ 10 V 1200 V ±30V 7800 pF @ 25 V - - ISOTOP® - 450W (Tc) -55°C ~ 150°C (TJ)
SI4010DY-T1-GE3

SI4010DY-T1-GE3

MOSFET N-CHANNEL 30V 31.3A 8SO

Vishay Siliconix

6,340 -
SI4010DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 31.3A (Tc) 4.5V, 10V 3.4mOhm @ 15A, 10V Surface Mount 2.3V @ 250µA 77 nC @ 10 V 30 V +20V, -16V 3595 pF @ 15 V - - 8-SOIC - 6W (Tc) -55°C ~ 150°C (TA)
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