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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM1N45DCS RLG

TSM1N45DCS RLG

MOSFET N-CH 450V 500MA 8SOP

Taiwan Semiconductor Corporation

2,007 -
TSM1N45DCS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 4.25Ohm @ 250mA, 10V Surface Mount 4.9V @ 250mA 6.5 nC @ 10 V 450 V ±50V 185 pF @ 25 V - - 8-SOP - 900mW (Ta) -55°C ~ 150°C (TJ)
FQU30N06LTU

FQU30N06LTU

MOSFET N-CH 60V 24A IPAK

onsemi

8,583 -
FQU30N06LTU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 5V, 10V 39mOhm @ 12A, 10V Through Hole 2.5V @ 250µA 20 nC @ 5 V 60 V ±20V 1040 pF @ 25 V - - IPAK - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ)
G75P04SI

G75P04SI

P-40V,-11A,RD(MAX)<8M@-10V,VTH-1

Goford Semiconductor

2,895 -
G75P04SI

数据表

- 8-SOIC (0.154", 3.90mm Width) Obsolete P-Channel MOSFET (Metal Oxide) 11A (Tc) 4.5V, 10V 8mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 106 nC @ 10 V 40 V ±20V 6509 pF @ 20 V - - 8-SOP - 2.5W (Tc) -55°C ~ 150°C (TJ)
BSP316PE6327

BSP316PE6327

MOSFET P-CH 100V 680MA SOT223-4

Infineon Technologies

2,727 -
BSP316PE6327

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 680mA (Ta) 4.5V, 10V 1.8Ohm @ 680mA, 10V Surface Mount 2V @ 170µA 6.4 nC @ 10 V 100 V ±20V 146 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
FQI4N20LTU

FQI4N20LTU

MOSFET N-CH 200V 3.8A I2PAK

onsemi

2,951 -
FQI4N20LTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 5V, 10V 1.35Ohm @ 1.9A, 10V Through Hole 2V @ 250µA 5.2 nC @ 5 V 200 V ±20V 310 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
ZVN4206ASTOA

ZVN4206ASTOA

MOSFET N-CH 60V 600MA E-LINE

Diodes Incorporated

4,573 -
ZVN4206ASTOA

数据表

- E-Line-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600mA (Ta) 5V, 10V 1Ohm @ 1.5A, 10V Through Hole 3V @ 1mA - 60 V ±20V 100 pF @ 25 V - - E-Line (TO-92 compatible) - 700mW (Ta) -55°C ~ 150°C (TJ)
DMTH6016LFDFWQ-7

DMTH6016LFDFWQ-7

MOSFET N-CH 60V 9.4A 6UDFN

Diodes Incorporated

4,013 -
DMTH6016LFDFWQ-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.4A (Ta) 4.5V, 10V 18mOhm @ 10A, 10V Surface Mount 3V @ 250µA 15.3 nC @ 10 V 60 V ±20V 925 pF @ 30 V AEC-Q101 - U-DFN2020-6 (SWP) (Type F) Automotive 1.06W (Ta) -55°C ~ 175°C (TJ)
DMP4026SFGQ-7

DMP4026SFGQ-7

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

4,347 -
DMP4026SFGQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 28A (Tc) 4.5V, 10V 25mOhm @ 3A, 10V Surface Mount 1.8V @ 250µA 48 nC @ 10 V 40 V ±20V 2275 pF @ 20 V AEC-Q101 - POWERDI3333-8 Automotive 2.6W (Ta), 33W (Tc) -55°C ~ 150°C (TJ)
IXFN55N50F

IXFN55N50F

MOSFET N-CH 500V 55A SOT227B

IXYS

5,033 -
IXFN55N50F

数据表

HiPerFET™, F Class SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 85mOhm @ 27.5A, 10V Chassis Mount 5.5V @ 8mA 195 nC @ 10 V 500 V ±20V 6700 pF @ 25 V - - SOT-227B - 600W (Tc) -55°C ~ 150°C (TJ)
DMTH8012LPS-13

DMTH8012LPS-13

MOSFET N-CH 80V 10A PWRDI5060

Diodes Incorporated

7,694 -
DMTH8012LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 72A (Tc) 4.5V, 10V 17mOhm @ 12A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 80 V ±20V 1949 pF @ 40 V - - PowerDI5060-8 - 2.6W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
DMNH6021SK3-13

DMNH6021SK3-13

MOSFET N-CH 60V 50A TO252

Diodes Incorporated

7,433 -
DMNH6021SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 23mOhm @ 12A, 10V Surface Mount 3V @ 250µA 20.1 nC @ 10 V 60 V ±20V 1143 pF @ 25 V AEC-Q101 - TO-252-3 Automotive 2.1W (Ta) -55°C ~ 175°C (TJ)
APT1001R1BN

APT1001R1BN

MOSFET N-CH 1000V 10.5A TO247AD

Microchip Technology

6,643 -
APT1001R1BN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 1.1Ohm @ 5.25A, 10V Through Hole 4V @ 1mA 130 nC @ 10 V 1000 V ±30V 2950 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
DMTH47M2SPSWQ-13

DMTH47M2SPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

4,082 -
DMTH47M2SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 73A (Tc) 10V 7.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 12.1 nC @ 10 V 40 V ±20V 897 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3.3W (Ta), 68W (Tc) -55°C ~ 175°C (TJ)
DMP4026SFVWQ-7

DMP4026SFVWQ-7

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

4,113 -
DMP4026SFVWQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.9A (Ta), 49A (Tc) 4.5V, 10V 25mOhm @ 3A, 10V Surface Mount, Wettable Flank 1.8V @ 250µA 45.8 nC @ 10 V 40 V ±20V 2064 pF @ 20 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 1.6W (Ta) -55°C ~ 150°C (TJ)
DMPH4026SFVWQ-7

DMPH4026SFVWQ-7

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

6,317 -
DMPH4026SFVWQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9.3A (Ta), 52A (Tc) 4.5V, 10V 25mOhm @ 3A, 10V Surface Mount, Wettable Flank 1.8V @ 250µA 45.8 nC @ 10 V 40 V ±20V 2064 pF @ 20 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 2W (Ta) -55°C ~ 175°C (TJ)
MCAC100N04-TP

MCAC100N04-TP

MOSFET N-CH 40 100A DFN5060

Micro Commercial Co

9,246 -
MCAC100N04-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 93 nC @ 10 V 40 V ±20V 4165 pF @ 25 V - - DFN5060 - 75W (Tj) -55°C ~ 150°C (TJ)
APT1001RBN

APT1001RBN

MOSFET N-CH 1000V 11A TO247AD

Microchip Technology

8,115 -
APT1001RBN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 1Ohm @ 5.5A, 10V Through Hole 4V @ 1mA 130 nC @ 10 V 1000 V ±30V 2950 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
APT1002RBNG

APT1002RBNG

MOSFET N-CH 1000V 8A TO247AD

Microsemi Corporation

2,649 -
APT1002RBNG

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.6Ohm @ 4A, 10V Through Hole 4V @ 1mA 105 nC @ 10 V 1000 V ±30V 1800 pF @ 25 V - - TO-247AD - 240W (Tc) -55°C ~ 150°C (TJ)
APT4065BNG

APT4065BNG

MOSFET N-CH 400V 11A TO247AD

Microsemi Corporation

2,899 -
APT4065BNG

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 650mOhm @ 5.5A, 10V Through Hole 4V @ 1mA 55 nC @ 10 V 400 V ±30V 950 pF @ 25 V - - TO-247AD - 180W (Tc) -55°C ~ 150°C (TJ)
APT40M42JN

APT40M42JN

MOSFET N-CH 400V 86A ISOTOP

Microsemi Corporation

4,549 -
APT40M42JN

数据表

POWER MOS IV® SOT-227-4, miniBLOC Tray Obsolete N-Channel MOSFET (Metal Oxide) 86A (Tc) 10V 42mOhm @ 43A, 10V Chassis Mount 4V @ 5mA 760 nC @ 10 V 400 V ±30V 14000 pF @ 25 V - - ISOTOP® - 690W (Tc) -55°C ~ 150°C (TJ)
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