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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT40M75JN

APT40M75JN

MOSFET N-CH 400V 56A ISOTOP

Microsemi Corporation

4,050 -
APT40M75JN

数据表

POWER MOS IV® SOT-227-4, miniBLOC Tray Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 75mOhm @ 28A, 10V Chassis Mount 4V @ 2.5mA 370 nC @ 10 V 400 V ±30V 6800 pF @ 25 V - - ISOTOP® - 520W (Tc) -55°C ~ 150°C (TJ)
APT5012JN

APT5012JN

MOSFET N-CH 500V 43A ISOTOP

Microsemi Corporation

4,601 -
APT5012JN

数据表

POWER MOS IV® SOT-227-4, miniBLOC Tray Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 120mOhm @ 21.5A, 10V Chassis Mount 4V @ 2.5mA 370 nC @ 10 V 500 V ±30V 6500 pF @ 25 V - - ISOTOP® - 520W (Tc) -55°C ~ 150°C (TJ)
APT5020BN

APT5020BN

MOSFET N-CH 500V 28A TO247AD

Microchip Technology

8,858 -
APT5020BN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 200mOhm @ 14A, 10V Through Hole 4V @ 1mA 210 nC @ 10 V 500 V ±30V 3500 pF @ 25 V - - TO-247AD - 360W (Tc) -55°C ~ 150°C (TJ)
AON6366E

AON6366E

MOSFET N-CHANNEL 30V 34A 8DFN

Alpha & Omega Semiconductor Inc.

9,282 -
AON6366E

数据表

AlphaMOS 8-PowerSMD, Flat Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 34A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V Surface Mount 2.4V @ 250µA 80 nC @ 10 V 30 V ±20V 3020 pF @ 15 V - - 8-DFN (5x6) - 46W (Tc) -55°C ~ 150°C (TJ)
DI060N06PQ

DI060N06PQ

MOSFET POWERQFN 5X6 N 60V

Diotec Semiconductor

8,672 -
DI060N06PQ

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 7mOhm @ 20A, 10V Surface Mount 4V @ 250µA 27 nC @ 10 V 60 V ±20V 1700 pF @ 30 V - - 8-QFN (5x6) - 70W (Tc) -55°C ~ 150°C (TJ)
FQP630

FQP630

MOSFET N-CH 200V 9A TO220-3

onsemi

5,514 -
FQP630

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 400mOhm @ 4.5A, 10V Through Hole 4V @ 250µA 25 nC @ 10 V 200 V ±25V 550 pF @ 25 V - - TO-220-3 - 78W (Tc) -55°C ~ 150°C (TJ)
MCP65N06-BP

MCP65N06-BP

MOSFET

Micro Commercial Co

7,553 -
MCP65N06-BP

数据表

- TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Tc) 10V 11mOhm @ 32.5A, 10V Through Hole 4V @ 250µA 54 nC @ 10 V 60 V ±20V 2220 pF @ 30 V - - TO-220AB (H) - 104W (Tj) -55°C ~ 150°C (TJ)
DMN4036LK3Q-13

DMN4036LK3Q-13

MOSFET BVDSS: 31V 40V TO252 T&R

Diodes Incorporated

3,225 -
DMN4036LK3Q-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12.2A (Ta) 4.5V, 10V 36mOhm @ 12A, 10V Surface Mount 3V @ 250µA 9.2 nC @ 10 V 40 V ±20V 453 pF @ 20 V AEC-Q101 - TO-252-3 Automotive 2.12W (Ta) -55°C ~ 150°C (TJ)
AOD2HC60

AOD2HC60

MOSFET N-CH 600V 2.5A TO252

Alpha & Omega Semiconductor Inc.

7,468 -
AOD2HC60

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 2Ohm @ 800mA, 10V Surface Mount 5V @ 250µA 10 nC @ 10 V 600 V ±30V 466 pF @ 100 V - - TO-252 (DPAK) - 74W (Tc) -50°C ~ 150°C (TJ)
APT5020BNFR

APT5020BNFR

MOSFET N-CH 500V 28A TO247AD

Microchip Technology

4,485 -
APT5020BNFR

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 200mOhm @ 14A, 10V Through Hole 4V @ 1mA 210 nC @ 10 V 500 V ±30V 3500 pF @ 25 V - - TO-247AD - 360W (Tc) -55°C ~ 150°C (TJ)
AOD3C50

AOD3C50

MOSFET N-CH 500V 3A TO252

Alpha & Omega Semiconductor Inc.

9,664 -
AOD3C50

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.4Ohm @ 2.2A, 10V Surface Mount 5V @ 250µA 25 nC @ 10 V 500 V ±30V 662 pF @ 100 V - - TO-252 (DPAK) - 83W (Tc) -55°C ~ 150°C (TJ)
APT5022BNG

APT5022BNG

MOSFET N-CH 500V 27A TO247AD

Microsemi Corporation

9,853 -
APT5022BNG

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 220mOhm @ 13.5A, 10V Through Hole 4V @ 1mA 210 nC @ 10 V 500 V ±30V 3500 pF @ 25 V - - TO-247AD - 360W (Tc) -55°C ~ 150°C (TJ)
DMP1022UWS-7

DMP1022UWS-7

MOSFET P-CH 12V 7.2A 8DFN

Diodes Incorporated

7,917 -
DMP1022UWS-7

数据表

- 8-VDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.2A (Ta) 1.8V, 4.5V 18mOhm @ 9A, 4.5V Surface Mount 1V @ 250µA 30 nC @ 5 V 12 V ±8V 2847 pF @ 4 V - - V-DFN3020-8 - 900mW (Ta) -55°C ~ 150°C (TJ)
APT5025BN

APT5025BN

MOSFET N-CH 500V 23A TO247AD

Microsemi Corporation

9,812 -
APT5025BN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 250mOhm @ 11.5A, 10V Through Hole 4V @ 1mA 130 nC @ 10 V 500 V ±30V 2950 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
ZVN3306ASTZ

ZVN3306ASTZ

MOSFET N-CH 60V 270MA E-LINE

Diodes Incorporated

8,595 -
ZVN3306ASTZ

数据表

- E-Line-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 270mA (Ta) 10V 5Ohm @ 500mA, 10V Through Hole 2.4V @ 1mA - 60 V ±20V 35 pF @ 18 V - - E-Line (TO-92 compatible) - 625mW (Ta) -55°C ~ 150°C (TJ)
APT6030BN

APT6030BN

MOSFET N-CH 600V 23A TO247AD

Microsemi Corporation

9,500 -
APT6030BN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 300mOhm @ 11.5A, 10V Through Hole 4V @ 1mA 210 nC @ 10 V 600 V ±30V 3500 pF @ 25 V - - TO-247AD - 360W (Tc) -55°C ~ 150°C (TJ)
SIA811DJ-T1-GE3

SIA811DJ-T1-GE3

MOSFET P-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix

9,222 -
SIA811DJ-T1-GE3

数据表

LITTLE FOOT® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.5A (Tc) 1.8V, 4.5V 94mOhm @ 2.8A, 4.5V Surface Mount 1V @ 250µA 13 nC @ 8 V 20 V ±8V 355 pF @ 10 V - Schottky Diode (Isolated) PowerPAK® SC-70-6 Dual - 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ)
APT6040BN

APT6040BN

MOSFET N-CH 600V 18A TO247AD

Microsemi Corporation

8,063 -
APT6040BN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 400mOhm @ 9A, 10V Through Hole 4V @ 1mA 130 nC @ 10 V 600 V ±30V 2950 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
SI1051X-T1-GE3

SI1051X-T1-GE3

MOSFET P-CH 8V 1.2A SC89-6

Vishay Siliconix

2,327 -
SI1051X-T1-GE3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.2A (Ta) 1.5V, 4.5V 122mOhm @ 1.2A, 4.5V Surface Mount 1V @ 250µA 9.45 nC @ 5 V 8 V ±5V 560 pF @ 4 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
APT6040BNG

APT6040BNG

MOSFET N-CH 600V 18A TO247AD

Microsemi Corporation

9,818 -
APT6040BNG

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 400mOhm @ 9A, 10V Through Hole 4V @ 1mA 130 nC @ 10 V 600 V ±30V 2950 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
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