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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PMCM950ENEZ

PMCM950ENEZ

MOSFET N-CH 60V 4.8A 9WLCSP

Nexperia USA Inc.

2,672 -
PMCM950ENEZ

数据表

- 9-XFBGA, WLCSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.8A (Ta) 4.5V, 10V 41mOhm @ 3A, 10V Surface Mount 1.5V @ 250µA 45 nC @ 10 V 60 V ±20V 1160 pF @ 30 V - - 9-WLCSP (1.48x1.48) - 780mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
BSP130,115

BSP130,115

MOSFET N-CH 300V 350MA SOT223

Nexperia USA Inc.

3,884 -
BSP130,115

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 350mA (Ta) 10V 6Ohm @ 250mA, 10V Surface Mount 2V @ 1mA - 300 V ±20V 120 pF @ 25 V - - SOT-223 - 1.5W (Ta) -55°C ~ 150°C (TJ)
PSMN022-30PL,127

PSMN022-30PL,127

MOSFET N-CH 30V 30A TO220AB

Nexperia USA Inc.

7,829 -
PSMN022-30PL,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 22mOhm @ 5A, 10V Through Hole 2.15V @ 1mA 9 nC @ 10 V 30 V ±20V 447 pF @ 15 V - - TO-220AB - 41W (Tc) -55°C ~ 175°C (TJ)
PHT4NQ10T,135

PHT4NQ10T,135

MOSFET N-CH 100V 3.5A SOT223

Nexperia USA Inc.

2,663 -
PHT4NQ10T,135

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 250mOhm @ 1.75A, 10V Surface Mount 4V @ 1mA 7.4 nC @ 10 V 100 V ±20V 300 pF @ 25 V - - SOT-223 - 6.9W (Tc) -65°C ~ 150°C (TJ)
BUK9Y19-55B/C2,115

BUK9Y19-55B/C2,115

MOSFET N-CH 55V 46A LFPAK56

Nexperia USA Inc.

3,425 -
BUK9Y19-55B/C2,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 46A - 17.3mOhm @ 20A, 10V Surface Mount 2V @ 1mA 18 nC @ 5 V 55 V - 1992 pF @ 25 V - - LFPAK56, Power-SO8 - - -
PSMN3R3-40YS/2X

PSMN3R3-40YS/2X

PSMN3R3-40YS/SOT669/LFPAK

Nexperia USA Inc.

5,428 -
PSMN3R3-40YS/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.3mOhm @ 25A, 10V Surface Mount 4V @ 1mA 49 nC @ 10 V 40 V ±20V 2754 pF @ 20 V - - LFPAK56, Power-SO8 - 117W (Tc) -55°C ~ 175°C (TJ)
BUK9Y2R8-40HX

BUK9Y2R8-40HX

BUK9Y2R8-40H/SOT669/LFPAK

Nexperia USA Inc.

6,425 -
BUK9Y2R8-40HX

数据表

- - Tape & Reel (TR) Active - - 120A (Tc) - - - - - - +16V, -10V - AEC-Q101 - - Automotive 172W (Tc) -
PSMN012-100YLX

PSMN012-100YLX

MOSFET N-CH 100V 85A LFPAK56

Nexperia USA Inc.

7,897 -
PSMN012-100YLX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 85A (Tc) 5V, 10V 11.9mOhm @ 25A, 10V Surface Mount 2.1V @ 1mA 118 nC @ 10 V 100 V ±20V 7973 pF @ 25 V - - LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
PSMN8R0-80YLX

PSMN8R0-80YLX

MOSFET N-CH 80V 100A LFPAK56

Nexperia USA Inc.

5,672 -
PSMN8R0-80YLX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 8mOhm @ 25A, 10V Surface Mount 2.1V @ 1mA 104 nC @ 10 V 80 V ±20V 8167 pF @ 25 V - - LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
NX5008NBKHH

NX5008NBKHH

MOSFET N-CH 50V 350MA DFN0606-3

Nexperia USA Inc.

17,791 -
NX5008NBKHH

数据表

TrenchMOS™ 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 350mA (Ta) - 2.8Ohm @ 200mA, 4.5V Surface Mount 900mV @ 250µA 0.7 nC @ 4.5 V 50 V ±8V 30 pF @ 25 V - - DFN0606-3 - 380mW (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ)
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