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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK663R2-40C,118

BUK663R2-40C,118

NEXPERIA BUK663R2-40C - 100A, 40

Nexperia USA Inc.

6,748 -
BUK663R2-40C,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.2mOhm @ 25A, 10V Surface Mount 2.8V @ 1mA 125 nC @ 10 V 40 V ±16V 8020 pF @ 25 V AEC-Q101 - D2PAK Automotive 204W (Tc) -55°C ~ 175°C (TJ)
PSMN1R3-30YL,115

PSMN1R3-30YL,115

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

11,543 -
PSMN1R3-30YL,115

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 1.3mOhm @ 15A, 10V Surface Mount 2.15V @ 1mA 100 nC @ 10 V 30 V ±20V 6227 pF @ 12 V - - LFPAK56; Power-SO8 - 121W (Tc) -55°C ~ 150°C (TJ)
PSMN7R8-120PSQ

PSMN7R8-120PSQ

MOSFET N-CH 120V 70A I2PAK

Nexperia USA Inc.

4,652 -
PSMN7R8-120PSQ

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 7.9mOhm @ 25A, 10V Through Hole 4V @ 1mA 167 nC @ 10 V 120 V ±20V 9473 pF @ 60 V - - I2PAK - 349W (Tc) -55°C ~ 175°C (TJ)
PSMN7R8-100PSEQ

PSMN7R8-100PSEQ

MOSFET N-CH 100V 100A TO220AB

Nexperia USA Inc.

9,055 -
PSMN7R8-100PSEQ

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tj) 10V 7.8mOhm @ 25A, 10V Through Hole 4V @ 1mA 128 nC @ 10 V 100 V ±20V 7110 pF @ 50 V - - TO-220AB - 294W (Tc) -55°C ~ 175°C (TJ)
PH7630DLX

PH7630DLX

MOSFET N-CH 30V LFPAK

Nexperia USA Inc.

8,042 -
PH7630DLX

数据表

- - Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 30 V - - - - - - - -
BUK7Y08-40B,115

BUK7Y08-40B,115

MOSFET N-CH 40V 75A LFPAK56

Nexperia USA Inc.

3,360 -
BUK7Y08-40B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 25A, 10V Surface Mount 4V @ 1mA 36.3 nC @ 10 V 40 V ±20V 2040 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 105W (Tc) -55°C ~ 175°C (TJ)
BUK7214-75B,118

BUK7214-75B,118

MOSFET N-CH 75V 70A DPAK

Nexperia USA Inc.

6,222 -
BUK7214-75B,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 14mOhm @ 25A, 10V Surface Mount 4V @ 1mA 41 nC @ 10 V 75 V ±20V 2612 pF @ 25 V AEC-Q101 - DPAK Automotive 158W (Tc) -55°C ~ 175°C (TJ)
BUK764R4-60E,118

BUK764R4-60E,118

MOSFET N-CH 60V 100A D2PAK

Nexperia USA Inc.

2,768 -
BUK764R4-60E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.5mOhm @ 25A, 10V Surface Mount 4V @ 1mA 82 nC @ 10 V 60 V ±20V 6230 pF @ 25 V AEC-Q101 - D2PAK Automotive 234W (Tc) -55°C ~ 175°C (TJ)
PMCM4401VNEAZ

PMCM4401VNEAZ

MOSFET N-CH 12V 4.7A 4WLCSP

Nexperia USA Inc.

112,495 -
PMCM4401VNEAZ

数据表

- 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.7A (Ta) 1.5V, 4.5V 42mOhm @ 3A, 4.5V Surface Mount 900mV @ 250µA 9 nC @ 4.5 V 12 V ±8V 335 pF @ 6 V - - 4-WLCSP (0.78x0.78) - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PMCM4401UNEZ

PMCM4401UNEZ

MOSFET N-CH 20V 4WLCSP

Nexperia USA Inc.

45,109 -
PMCM4401UNEZ

数据表

- 4-XFBGA, WLCSP Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.4A (Tj) 2.5V, 4.5V - Surface Mount - 6.2 nC @ 4.5 V 20 V ±8V - - - 4-WLCSP (0.78x0.78) - 400mW 150°C (TJ)
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