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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK7640-100A,118

BUK7640-100A,118

MOSFET N-CH 100V 37A D2PAK

Nexperia USA Inc.

8,489 -
BUK7640-100A,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 40mOhm @ 25A, 10V Surface Mount 4V @ 1mA - 100 V ±20V 2293 pF @ 25 V AEC-Q101 - D2PAK Automotive 138W (Tc) -55°C ~ 175°C (TJ)
PSMN013-100BS,118

PSMN013-100BS,118

MOSFET N-CH 100V 68A D2PAK

Nexperia USA Inc.

14,956 -
PSMN013-100BS,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 68A (Tc) 10V 13.9mOhm @ 15A, 10V Surface Mount 4V @ 1mA 59 nC @ 10 V 100 V ±20V 3195 pF @ 50 V - - D2PAK - 170W (Tc) -55°C ~ 175°C (TJ)
BUK9614-55A,118

BUK9614-55A,118

MOSFET N-CH 55V 73A D2PAK

Nexperia USA Inc.

6,680 -
BUK9614-55A,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 73A (Tc) 4.5V, 10V 13mOhm @ 25A, 10V Surface Mount 2V @ 1mA - 55 V ±10V 3307 pF @ 25 V AEC-Q101 - D2PAK Automotive 149W (Tc) -55°C ~ 175°C (TJ)
PSMN2R6-40YS,115

PSMN2R6-40YS,115

MOSFET N-CH 40V 100A LFPAK56

Nexperia USA Inc.

96,777 -
PSMN2R6-40YS,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.8mOhm @ 25A, 10V Surface Mount 4V @ 1mA 63 nC @ 10 V 40 V ±20V 3776 pF @ 12 V - - LFPAK56, Power-SO8 - 131W (Tc) -55°C ~ 175°C (TJ)
BUK7631-100E,118

BUK7631-100E,118

MOSFET N-CH 100V 34A D2PAK

Nexperia USA Inc.

5,984 -
BUK7631-100E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 31mOhm @ 10A, 10V Surface Mount 4V @ 1mA 29.4 nC @ 10 V 100 V ±20V 1738 pF @ 25 V AEC-Q101 - D2PAK Automotive 96W (Tc) -55°C ~ 175°C (TJ)
PSMN2R0-30YLE,115

PSMN2R0-30YLE,115

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

4,814 -
PSMN2R0-30YLE,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2mOhm @ 25A, 10V Surface Mount 2.15V @ 1mA 87 nC @ 10 V 30 V ±20V 5217 pF @ 15 V - - LFPAK56, Power-SO8 - 272W (Tc) -55°C ~ 175°C (TJ)
PHB45NQ10T,118

PHB45NQ10T,118

MOSFET N-CH 100V 47A D2PAK

Nexperia USA Inc.

3,378 -
PHB45NQ10T,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 25mOhm @ 25A, 10V Surface Mount 4V @ 1mA 61 nC @ 10 V 100 V ±20V 2600 pF @ 25 V - - D2PAK - 150W (Tc) -55°C ~ 175°C (TJ)
PSMN4R4-80PS,127

PSMN4R4-80PS,127

MOSFET N-CH 80V 100A TO220AB

Nexperia USA Inc.

5,268 -
PSMN4R4-80PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.1mOhm @ 15A, 10V Through Hole 4V @ 1mA 125 nC @ 10 V 80 V ±20V 8400 pF @ 40 V - - TO-220AB - 306W (Tc) -55°C ~ 175°C (TJ)
PSMN5R6-100PS,127

PSMN5R6-100PS,127

MOSFET N-CH 100V 100A TO220AB

Nexperia USA Inc.

2,089 -
PSMN5R6-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 5.6mOhm @ 25A, 10V Through Hole 4V @ 1mA 141 nC @ 10 V 100 V ±20V 8061 pF @ 50 V - - TO-220AB - 306W (Tc) -55°C ~ 175°C (TJ)
PSMN4R3-80PS,127

PSMN4R3-80PS,127

MOSFET N-CH 80V 120A TO220AB

Nexperia USA Inc.

8,640 -
PSMN4R3-80PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.3mOhm @ 25A, 10V Through Hole 4V @ 1mA 111 nC @ 10 V 80 V ±20V 8161 pF @ 40 V - - TO-220AB - 306W (Tc) -55°C ~ 175°C (TJ)
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