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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PMCM4401VPEZ

PMCM4401VPEZ

MOSFET P-CH 12V 3.9A 4WLCSP

Nexperia USA Inc.

13,158 -
PMCM4401VPEZ

数据表

- 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.9A (Ta) 1.8V, 4.5V 65mOhm @ 3A, 4.5V Surface Mount 900mV @ 250µA 10 nC @ 4.5 V 12 V ±8V 415 pF @ 6 V - - 4-WLCSP (0.78x0.78) - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PMCM4401UPEZ

PMCM4401UPEZ

MOSFET P-CH 20V 4A 4WLCSP

Nexperia USA Inc.

7,875 -
PMCM4401UPEZ

数据表

- 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.8V, 4.5V 95mOhm @ 3A, 4.5V Surface Mount 900mV @ 250µA 10 nC @ 4.5 V 20 V ±8V 420 pF @ 10 V - - 4-WLCSP (0.78x0.78) - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PSMN7R0-100BS,118

PSMN7R0-100BS,118

MOSFET N-CH 100V 100A D2PAK

Nexperia USA Inc.

2,907 -
PSMN7R0-100BS,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 6.8mOhm @ 15A, 10V Surface Mount 4V @ 1mA 125 nC @ 10 V 100 V ±20V 6686 pF @ 50 V - - D2PAK - 269W (Tc) -55°C ~ 175°C (TJ)
BUK7Y1R7-40HX

BUK7Y1R7-40HX

MOSFET N-CH 40V 120A LFPAK56

Nexperia USA Inc.

2,768 -
BUK7Y1R7-40HX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 1.7mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 96 nC @ 10 V 40 V +20V, -10V 6142 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 294W (Tc) -55°C ~ 175°C (TJ)
PSMN5R0-100PS,127

PSMN5R0-100PS,127

MOSFET N-CH 100V 120A TO220AB

Nexperia USA Inc.

2,691 -
PSMN5R0-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 5mOhm @ 25A, 10V Through Hole 4V @ 1mA 170 nC @ 10 V 100 V ±20V 9900 pF @ 50 V - - TO-220AB - 338W (Tc) -55°C ~ 175°C (TJ)
PSMN3R5-80PS,127

PSMN3R5-80PS,127

MOSFET N-CH 80V 120A TO220AB

Nexperia USA Inc.

4,579 -
PSMN3R5-80PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.5mOhm @ 25A, 10V Through Hole 4V @ 1mA 139 nC @ 10 V 80 V ±20V 9961 pF @ 40 V - - TO-220AB - 338W (Tc) -55°C ~ 175°C (TJ)
PSMN4R3-100PS,127

PSMN4R3-100PS,127

MOSFET N-CH 100V 120A TO220AB

Nexperia USA Inc.

4,822 -
PSMN4R3-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.3mOhm @ 25A, 10V Through Hole 4V @ 1mA 170 nC @ 10 V 100 V ±20V 9900 pF @ 50 V - - TO-220AB - 338W (Tc) -55°C ~ 175°C (TJ)
PSMN2R0-60PSRQ

PSMN2R0-60PSRQ

MOSFET N-CH 60V 120A TO220AB

Nexperia USA Inc.

8,373 -
PSMN2R0-60PSRQ

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.2mOhm @ 25A, 10V Through Hole 4V @ 1mA 192 nC @ 10 V 60 V ±20V 13500 pF @ 30 V - - TO-220AB - 338W (Tc) -55°C ~ 175°C (TJ)
PSMN1R1-30PL,127

PSMN1R1-30PL,127

MOSFET N-CH 30V 120A TO220AB

Nexperia USA Inc.

2,037 -
PSMN1R1-30PL,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.3mOhm @ 25A, 10V Through Hole 2.2V @ 1mA 243 nC @ 10 V 30 V ±20V 14850 pF @ 15 V - - TO-220AB - 338W (Tc) -55°C ~ 175°C (TJ)
BUK7628-100A,118

BUK7628-100A,118

MOSFET N-CH 100V 47A D2PAK

Nexperia USA Inc.

19 -
BUK7628-100A,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 28mOhm @ 25A, 10V Surface Mount 4V @ 1mA - 100 V ±20V 3100 pF @ 25 V AEC-Q101 - D2PAK Automotive 166W (Tc) -55°C ~ 175°C (TJ)
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