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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GAN111-650WSBQ

GAN111-650WSBQ

GAN111-650WSB/SOT429/TO-247

Nexperia USA Inc.

249 -
GAN111-650WSBQ

数据表

- TO-247-3 Tube Active N-Channel GaNFET (Gallium Nitride) 21A (Ta) 10V 114mOhm @ 14A, 10V Through Hole 4.8V @ 1mA 4.9 nC @ 10 V 650 V ±20V 336 pF @ 400 V - - TO-247-3L - 107W (Ta) -55°C ~ 175°C (TJ)
BUK9275-100A,118

BUK9275-100A,118

MOSFET N-CH 100V 21.7A DPAK

Nexperia USA Inc.

6,161 -
BUK9275-100A,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21.7A (Tc) 4.5V, 10V 72mOhm @ 10A, 10V Surface Mount 2V @ 1mA - 100 V ±10V 1690 pF @ 25 V AEC-Q101 - DPAK Automotive 88W (Tc) -55°C ~ 175°C (TJ)
PSMNR70-40YSNX

PSMNR70-40YSNX

PSMNR70-40YSN/SOT1023/LFPAK56E

Nexperia USA Inc.

9,477 -
PSMNR70-40YSNX

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 320A (Ta) 10V 0.81Ohm @ 25A, 10V Surface Mount 3.6V @ 1mA 235 nC @ 10 V 40 V ±20V 14307 pF @ 25 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 333W (Ta) -55°C ~ 175°C (TJ)
PHP20NQ20T,127

PHP20NQ20T,127

MOSFET N-CH 200V 20A TO220AB

Nexperia USA Inc.

4,393 -
PHP20NQ20T,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 130mOhm @ 10A, 10V Through Hole 4V @ 1mA 65 nC @ 10 V 200 V ±20V 2470 pF @ 25 V - - TO-220AB - 150W (Tc) -55°C ~ 175°C (TJ)
PSMN1R8-80SSFJ

PSMN1R8-80SSFJ

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,771 -
PSMN1R8-80SSFJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 270A (Tc) 7V, 10V 1.8mOhm @ 25A, 10V Surface Mount 4V @ 1mA 222 nC @ 10 V 80 V ±20V 15319 pF @ 40 V - - LFPAK88 (SOT1235) - 341W (Tc) -55°C ~ 175°C (TJ)
PSMN2R0-100SSFJ

PSMN2R0-100SSFJ

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,754 -
PSMN2R0-100SSFJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 267A (Tc) 7V, 10V 2.07mOhm @ 25A, 10V Surface Mount 4V @ 1mA 242 nC @ 10 V 100 V ±20V 16140 pF @ 50 V - - LFPAK88 (SOT1235) - 341W (Tc) -55°C ~ 175°C (TJ)
PHP33NQ20T,127

PHP33NQ20T,127

MOSFET N-CH 200V 32.7A TO220AB

Nexperia USA Inc.

3,389 -
PHP33NQ20T,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32.7A (Tc) 10V 77mOhm @ 15A, 10V Through Hole 4V @ 1mA 32.2 nC @ 10 V 200 V ±20V 1870 pF @ 25 V - - TO-220AB - 230W (Tc) -55°C ~ 175°C (TJ)
PSMNR90-80ASEJ

PSMNR90-80ASEJ

PSMNR90-80ASE/SOT8000A/CCPAK12

Nexperia USA Inc.

250 -
PSMNR90-80ASEJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 495A (Tc) 10V 0.9mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 504 nC @ 10 V 80 V ±20V 36802 pF @ 40 V - - CCPAK1212 - 1.55kW (Tc) -55°C ~ 175°C (TJ)
PSMNR90-80CSFJ

PSMNR90-80CSFJ

PSMNR90-80CSF/SOT8005A/CCPAK12

Nexperia USA Inc.

250 -
PSMNR90-80CSFJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 505A (Tc) 10V 0.9mOhm @ 25A, 10V Surface Mount 4V @ 1mA 463 nC @ 10 V 80 V ±20V 32115 pF @ 40 V - - CCPAK1212i - 1.55kW (Tc) -55°C ~ 175°C (TJ)
PSMNR90-80ASFJ

PSMNR90-80ASFJ

PSMNR90-80ASF/SOT8000A/CCPAK12

Nexperia USA Inc.

250 -
PSMNR90-80ASFJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 505A (Tc) 10V 0.85mOhm @ 25A, 10V Surface Mount 4V @ 1mA 463 nC @ 10 V 80 V ±20V 32115 pF @ 40 V - - CCPAK1212 - 1.55kW (Tc) -55°C ~ 175°C (TJ)
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