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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK9Y1R6-40HX

BUK9Y1R6-40HX

BUK9Y1R6-40H/SOT669/LFPAK

Nexperia USA Inc.

4,601 -
BUK9Y1R6-40HX

数据表

- - Tape & Reel (TR) Active - - 120A (Tc) - - - - - - +16V, -10V - AEC-Q101 - - Automotive 294W (Tc) -
BUK7Y29-40EX

BUK7Y29-40EX

MOSFET N-CH 40V 26A LFPAK56

Nexperia USA Inc.

2,464 -
BUK7Y29-40EX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 29mOhm @ 5A, 10V Surface Mount 4V @ 1mA 7.9 nC @ 10 V 40 V ±20V 492 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 37W (Tc) -55°C ~ 175°C (TJ)
PSMN6R3-120ESQ

PSMN6R3-120ESQ

MOSFET N-CH 120V 70A I2PAK

Nexperia USA Inc.

6,354 -
PSMN6R3-120ESQ

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 6.7mOhm @ 25A, 10V Through Hole 4V @ 250µA 207.1 nC @ 10 V 120 V ±20V 11384 pF @ 60 V - - I2PAK - 405W (Tc) -55°C ~ 175°C (TJ)
PSMN0R9-30YLD/2X

PSMN0R9-30YLD/2X

PSMN0R9-30YLD/SOT1023/4 LEADS

Nexperia USA Inc.

3,086 -
PSMN0R9-30YLD/2X

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300A (Tc) 4.5V, 10V 0.87mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 109 nC @ 10 V 30 V ±20V 7668 pF @ 15 V - - LFPAK56, Power-SO8 - 291W (Tc) -55°C ~ 150°C (TJ)
BUK6210-55C,118

BUK6210-55C,118

MOSFET N-CH 55V 78A DPAK

Nexperia USA Inc.

5,516 -
BUK6210-55C,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 78A (Tc) 10V 9.6mOhm @ 15A, 10V Surface Mount 2.8V @ 1mA 63 nC @ 10 V 55 V ±16V 4000 pF @ 25 V AEC-Q101 - DPAK Automotive 128W (Tc) -55°C ~ 175°C (TJ)
PSMN013-100PS,127

PSMN013-100PS,127

MOSFET N-CH 100V 68A TO220AB

Nexperia USA Inc.

3,294 -
PSMN013-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 68A (Tc) 10V 13.9mOhm @ 15A, 10V Through Hole 4V @ 1mA 59 nC @ 10 V 100 V ±20V 3195 pF @ 50 V - - TO-220AB - 170W (Tc) -55°C ~ 175°C (TJ)
GAN140-650EBEZ

GAN140-650EBEZ

650 V, 140 MOHM GALLIUM NITRIDE

Nexperia USA Inc.

2,429 -
GAN140-650EBEZ

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 17A (Tc) 6V 140mOhm @ 5A, 6V Surface Mount, Wettable Flank 2.5V @ 17.2mA 3.5 nC @ 6 V 650 V +7V, -1.4V 125 pF @ 400 V - - DFN8080-8 - 113W (Tc) -55°C ~ 150°C (TJ)
PHP45NQ10T,127

PHP45NQ10T,127

MOSFET N-CH 100V 47A TO220AB

Nexperia USA Inc.

6,686 -
PHP45NQ10T,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 25mOhm @ 25A, 10V Through Hole 4V @ 1mA 61 nC @ 10 V 100 V ±20V 2600 pF @ 25 V - - TO-220AB - 150W (Tc) -55°C ~ 175°C (TJ)
BSP030,115

BSP030,115

MOSFET N-CH 30V 10A SOT223

Nexperia USA Inc.

9,417 -
BSP030,115

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 30mOhm @ 5A, 10V Surface Mount 2.8V @ 1mA 40 nC @ 10 V 30 V ±20V 770 pF @ 24 V - - SOT-223 - 8.3W (Tc) -65°C ~ 150°C (TJ)
GANE3R9-150QBAZ

GANE3R9-150QBAZ

GANE3R9-150QBA/SOT8091/VQFN7

Nexperia USA Inc.

2,430 -
GANE3R9-150QBAZ

数据表

- 25-PowerVFQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 100A (Ta) 5V 3.9mOhm @ 30A, 5V Surface Mount 2.1V @ 12mA 20 nC @ 5 V 150 V +6V, -4V 2200 pF @ 75 V - - 25-VQFN (4x6) - 65W (Ta) -40°C ~ 150°C (TJ)
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