富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FCPF380N65FL1

FCPF380N65FL1

MOSFET N-CH 650V 10.2A TO220F

onsemi

4,750 -
FCPF380N65FL1

数据表

FRFET®, SuperFET® II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.2A (Tc) 10V 380mOhm @ 5.1A, 10V Through Hole 5V @ 1mA 43 nC @ 10 V 650 V ±20V 1680 pF @ 100 V - - TO-220F-3 - 33W (Tc) -55°C ~ 150°C (TJ)
STP6N65M2

STP6N65M2

MOSFET N-CH 650V 4A TO220

STMicroelectronics

9,038 -
STP6N65M2

数据表

MDmesh™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.35Ohm @ 2A, 10V Through Hole 4V @ 250µA 9.8 nC @ 10 V 650 V ±25V 226 pF @ 100 V - - TO-220 - 60W (Tc) -55°C ~ 150°C (TJ)
PH2230DLSX

PH2230DLSX

MOSFET N-CH LFPAK5 POWER-SO8

Nexperia USA Inc.

4,944 -
PH2230DLSX

数据表

* SC-100, SOT-669 Tape & Reel (TR) Obsolete - - - - - Surface Mount - - - - - - - LFPAK56, Power-SO8 - - -
R8010ANX

R8010ANX

MOSFET N-CH 800V 10A TO220FM

Rohm Semiconductor

3,604 -
R8010ANX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 560mOhm @ 5A, 10V Through Hole 5V @ 1mA 62 nC @ 10 V 800 V ±30V 1750 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
R6020ENZ1C9

R6020ENZ1C9

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor

9,187 -
R6020ENZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Through Hole 4V @ 1mA 60 nC @ 10 V 600 V ±20V 1400 pF @ 25 V - - TO-247 - 120W (Tc) 150°C (TJ)
R6024ENZ1C9

R6024ENZ1C9

MOSFET N-CH 600V 24A TO247

Rohm Semiconductor

9,126 -
R6024ENZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 4V @ 1mA 70 nC @ 10 V 600 V ±20V 1650 pF @ 25 V - - TO-247 - 120W (Tc) 150°C (TJ)
R6025FNZ1C9

R6025FNZ1C9

MOSFET N-CH 600V 25A TO247

Rohm Semiconductor

8,068 -
R6025FNZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 180mOhm @ 12.5A, 10V Through Hole 5V @ 1mA 85 nC @ 10 V 600 V ±30V 3500 pF @ 25 V - - TO-247 - 150W (Tc) 150°C (TJ)
R6030ENZ1C9

R6030ENZ1C9

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor

2,962 -
R6030ENZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 4V @ 1mA 85 nC @ 10 V 600 V ±20V 2100 pF @ 25 V - - TO-247 - 120W (Tc) 150°C (TJ)
R6035ENZ1C9

R6035ENZ1C9

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor

4,605 -
R6035ENZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 102mOhm @ 18.1A, 10V Through Hole 4V @ 1mA 110 nC @ 10 V 600 V ±20V 2720 pF @ 25 V - - TO-247 - 120W (Tc) 150°C (TJ)
R6047ENZ1C9

R6047ENZ1C9

MOSFET N-CH 600V 47A TO247

Rohm Semiconductor

4,143 -
R6047ENZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 72mOhm @ 25.8A, 10V Through Hole 4V @ 1mA 145 nC @ 10 V 600 V ±20V 3850 pF @ 25 V - - TO-247 - 120W (Tc) 150°C (TJ)
R6076ENZ1C9

R6076ENZ1C9

MOSFET N-CH 600V 76A TO247

Rohm Semiconductor

4,899 -
R6076ENZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 42mOhm @ 44.4A, 10V Through Hole 4V @ 1mA 260 nC @ 10 V 600 V ±20V 6500 pF @ 25 V - - TO-247 - 120W (Tc) 150°C (TJ)
FCU850N80Z

FCU850N80Z

MOSFET N-CH 800V 6A IPAK

onsemi

2,065 -
FCU850N80Z

数据表

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 850mOhm @ 3A, 10V Through Hole 4.5V @ 600µA 29 nC @ 10 V 800 V ±20V 1315 pF @ 100 V - - IPAK - 75W (Tc) -55°C ~ 150°C (TJ)
FQP2P40-F080

FQP2P40-F080

MOSFET P-CH 400V 2A TO220-3

onsemi

9,629 -
FQP2P40-F080

数据表

QFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 6.5Ohm @ 1A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 400 V ±30V 350 pF @ 25 V - - TO-220-3 - 63W (Tc) -55°C ~ 150°C (TJ)
HTNFET-DC

HTNFET-DC

MOSFET N-CH 55V 8-DIP

Honeywell Aerospace

7,953 -
HTNFET-DC

数据表

HTMOS™ 8-CDIP Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) - 5V 400mOhm @ 100mA, 5V Through Hole 2.4V @ 100µA 4.3 nC @ 5 V 55 V 10V 290 pF @ 28 V - - - - 50W (Tj) -
HTNFET-TC

HTNFET-TC

MOSFET N-CH 55V 4-PIN

Honeywell Aerospace

8,876 -
HTNFET-TC

数据表

HTMOS™ - Bulk Active N-Channel MOSFET (Metal Oxide) - 5V 400mOhm @ 100mA, 5V Through Hole 2.4V @ 100µA 4.3 nC @ 5 V 55 V 10V 290 pF @ 28 V - - - - 50W (Tj) -
XR46000ESETR

XR46000ESETR

MOSFET N-CH 600V 1.5A SOT223

MaxLinear, Inc.

2,520 -
XR46000ESETR

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 10V 8Ohm @ 750mA, 10V Surface Mount 4V @ 250µA 7.5 nC @ 10 V 600 V ±30V 170 pF @ 25 V - - SOT-223-3 - 20W (Tc) 150°C (TJ)
FCU2250N80Z

FCU2250N80Z

MOSFET N-CH 800V 2.6A IPAK

onsemi

7,976 -
FCU2250N80Z

数据表

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V Through Hole 4.5V @ 260µA 14 nC @ 10 V 800 V ±20V 585 pF @ 100 V - - IPAK - 39W (Tc) -55°C ~ 150°C (TJ)
FCU4300N80Z

FCU4300N80Z

MOSFET N-CH 800V 1.6A IPAK

onsemi

6,319 -
FCU4300N80Z

数据表

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 4.3Ohm @ 800mA, 10V Through Hole 4.5V @ 160µA 8.8 nC @ 10 V 800 V ±20V 355 pF @ 100 V - - IPAK - 27.8W (Tc) -55°C ~ 150°C (TJ)
NDDP010N25AZ-1H

NDDP010N25AZ-1H

MOSFET N-CH 250V 10A IPAK/TP

onsemi

5,668 -
NDDP010N25AZ-1H

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bag Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 420mOhm @ 5A, 10V Through Hole 4.5V @ 1mA 16 nC @ 10 V 250 V ±30V 980 pF @ 20 V - - IPAK/TP - 1W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
DMTH4014LPSW-13

DMTH4014LPSW-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

9,626 -
DMTH4014LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 43.5A (Tc) 4.5V, 10V 14.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 3V @ 250µA 11.2 nC @ 10 V 40 V ±20V 750 pF @ 20 V - - PowerDI5060-8 (Type UX) - 4W (Ta), 46.9W (Tc) -55°C ~ 175°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户