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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STF150N10F7

STF150N10F7

MOSFET N-CH 100V 65A TO220FP

STMicroelectronics

7,950 -
STF150N10F7

数据表

DeepGATE™, STripFET™ VII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 65A (Tc) 10V 4.2mOhm @ 55A, 10V Through Hole 4.5V @ 250µA 117 nC @ 10 V 100 V ±20V 8115 pF @ 50 V - - TO-220FP - 35W (Tc) -55°C ~ 175°C (TJ)
STI150N10F7

STI150N10F7

MOSFET N-CH 100V 110A I2PAK

STMicroelectronics

4,252 -
STI150N10F7

数据表

STripFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 4.2mOhm @ 55A, 10V Through Hole 4.5V @ 250µA 117 nC @ 10 V 100 V ±20V 8115 pF @ 50 V - - TO-262 (I2PAK) - 250W (Tc) -55°C ~ 175°C (TJ)
PCP1402-TD-H

PCP1402-TD-H

MOSFET N-CH 250V 1.2A SOT89

onsemi

3,410 -
PCP1402-TD-H

数据表

- TO-243AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.2A (Ta) 10V 2.4Ohm @ 600mA, 10V Surface Mount 3.5V @ 1mA 4.2 nC @ 10 V 250 V ±30V 210 pF @ 20 V - - SOT-89/PCP-2 - 3.5W (Tc) 150°C (TJ)
AUIRFN8401TR

AUIRFN8401TR

MOSFET N-CH 40V 84A PQFN

Infineon Technologies

2,297 -
AUIRFN8401TR

数据表

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 84A (Tc) 10V 4.6mOhm @ 50A, 10V Surface Mount 3.9V @ 50µA 66 nC @ 10 V 40 V ±20V 2170 pF @ 25 V - - PQFN (5x6) - 4.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ)
AUIRFS4115

AUIRFS4115

MOSFET N-CH 150V 99A D2PAK

Infineon Technologies

7,255 -
AUIRFS4115

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 99A (Tc) 10V 12.1mOhm @ 62A, 10V Surface Mount 5V @ 250µA 120 nC @ 10 V 150 V ±20V 5270 pF @ 50 V - - D2PAK - 375W (Tc) -55°C ~ 175°C (TJ)
AUIRFSL4115

AUIRFSL4115

MOSFET N-CH 150V 99A TO262

Infineon Technologies

3,382 -
AUIRFSL4115

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 99A (Tc) 10V 12.1mOhm @ 62A, 10V Through Hole 5V @ 250µA 120 nC @ 10 V 150 V ±20V 5270 pF @ 50 V - - TO-262 - 375W (Tc) -55°C ~ 175°C (TJ)
IRFH4209DTRPBF

IRFH4209DTRPBF

MOSFET N-CH 25V 44A/260A PQFN

Infineon Technologies

9,147 -
IRFH4209DTRPBF

数据表

FASTIRFET™, HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 44A (Ta), 260A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V Surface Mount 2.1V @ 100µA 74 nC @ 10 V 25 V ±20V 4620 pF @ 13 V - - PQFN (5x6) - 3.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
IRFP7718PBF

IRFP7718PBF

MOSFET N-CH 75V 195A TO247AC

Infineon Technologies

9,590 -
IRFP7718PBF

数据表

HEXFET®, StrongIRFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V Through Hole 3.7V @ 250µA 830 nC @ 10 V 75 V ±20V 29550 pF @ 25 V - - TO-247AC - 517W (Tc) -55°C ~ 175°C (TJ)
IRFS4321-7PPBF

IRFS4321-7PPBF

MOSFET N-CH 150V 86A D2PAK

Infineon Technologies

2,509 -
IRFS4321-7PPBF

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 86A (Tc) 10V 14.7mOhm @ 34A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 150 V ±20V 4460 pF @ 50 V - - D2PAK (7-Lead) - 350W (Tc) -55°C ~ 175°C (TJ)
IRFU7540PBF

IRFU7540PBF

MOSFET N-CH 60V 90A IPAK

Infineon Technologies

5,777 -
IRFU7540PBF

数据表

HEXFET®, StrongIRFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V Through Hole 3.7V @ 100µA 130 nC @ 10 V 60 V ±20V 4360 pF @ 25 V - - IPAK (TO-251AA) - 140W (Tc) -55°C ~ 175°C (TJ)
DMN2011UFDE-13

DMN2011UFDE-13

MOSFET N-CH 20V 11.7A 6UDFN

Diodes Incorporated

2,342 -
DMN2011UFDE-13

数据表

- 6-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.7A (Ta) 1.5V, 4.5V 9.5mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 84 nC @ 10 V 20 V ±12V 3372 pF @ 10 V - - U-DFN2020-6 (Type E) - 610mW (Ta) -55°C ~ 150°C (TJ)
DMN1003UFDE-7

DMN1003UFDE-7

MOSFET BVDSS: 8V~24V U-DFN2020-6

Diodes Incorporated

6,607 -
DMN1003UFDE-7

数据表

- 6-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta) 2.5V, 4.5V 3mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 45 nC @ 8 V 12 V ±8V 2551 pF @ 6 V - - U-DFN2020-6 (Type E) - 800mW (Ta) -55°C ~ 150°C (TJ)
DMT6011LSS-13

DMT6011LSS-13

MOSFET BVDSS: 41V~60V SO-8 T&R 2

Diodes Incorporated

8,008 -
DMT6011LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.6A (Ta) 4.5V, 10V 11mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 22.2 nC @ 10 V 60 V ±20V 1072 pF @ 30 V - - 8-SO - 1.4W (Ta) -55°C ~ 150°C (TJ)
DMT2004UFV-13

DMT2004UFV-13

MOSFET N-CH 24V 70A POWERDI3333

Diodes Incorporated

2,218 -
DMT2004UFV-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 2.5V, 10V 5mOhm @ 12A, 10V Surface Mount 1.45V @ 250µA 53.7 nC @ 10 V 24 V ±12V 1683 pF @ 15 V - - PowerDI3333-8 (Type UX) - 1.2W (Ta) -55°C ~ 150°C (TJ)
AO4286

AO4286

MOSFET N-CH 100V 4A 8SOIC

Alpha & Omega Semiconductor Inc.

9,070 -
AO4286

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 4.5V, 10V 68mOhm @ 4A, 10V Surface Mount 2.9V @ 250µA 10 nC @ 10 V 100 V ±20V 390 pF @ 50 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
BSP123E6327T

BSP123E6327T

MOSFET N-CH 100V 370MA SOT223-4

Infineon Technologies

4,693 -
BSP123E6327T

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 370mA (Ta) 2.8V, 10V 6Ohm @ 370mA, 10V Surface Mount 1.8V @ 50µA 2.4 nC @ 10 V 100 V ±20V 70 pF @ 25 V - - PG-SOT223-4 - 1.79W (Ta) -55°C ~ 150°C (TJ)
DMP3025SFDF-7

DMP3025SFDF-7

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

2,256 -
DMP3025SFDF-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.6A (Ta) 5V, 10V 19mOhm @ 8A, 10V Surface Mount 2.6V @ 250µA 20 nC @ 10 V 30 V ±25V 1031 pF @ 15 V - - U-DFN2020-6 (Type F) - 1.3W (Ta) -55°C ~ 150°C (TJ)
PJQ5472A_R2_00001

PJQ5472A_R2_00001

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,202 -
PJQ5472A_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 2.9A (Ta), 13A (Tc) 4.5V, 10V 115mOhm @ 6.5A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 100 V ±20V 1413 pF @ 25 V - - DFN5060-8 - 2W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
PJD10N10_L2_00001

PJD10N10_L2_00001

100V N-CHANNEL MOSFET

Panjit International Inc.

7,243 -
PJD10N10_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 2.6A (Ta), 34.7A (Tc) 6V, 10V 130mOhm @ 5A, 10V Surface Mount 3.5V @ 250µA 12 nC @ 10 V 100 V ±25V 707 pF @ 30 V - - TO-252AA - 2W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ)
PJD1NA60_L2_00001

PJD1NA60_L2_00001

600 V N-CHANNEL MOSFET

Panjit International Inc.

8,609 -
PJD1NA60_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Ta) 10V 14Ohm @ 500mA, 10V Surface Mount 4V @ 250µA 3.3 nC @ 10 V 600 V ±30V 95 pF @ 25 V - - TO-252AA - 27W (Tc) -55°C ~ 150°C (TJ)
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