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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMNH6069SFVWQ-13

DMNH6069SFVWQ-13

MOSFET BVDSS: 41V~60V POWERDI333

Diodes Incorporated

8,284 -
DMNH6069SFVWQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta), 18A (Tc) 4.5V, 10V 50mOhm @ 3A, 10V Surface Mount, Wettable Flank 3V @ 250µA 14 nC @ 10 V 60 V ±20V 740 pF @ 30 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 3W (Ta) -55°C ~ 175°C (TJ)
IRLM110ATF

IRLM110ATF

MOSFET N-CH 100V 1.5A SOT223-4

onsemi

7,639 -
IRLM110ATF

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 5V 440mOhm @ 750mA, 5V Surface Mount 2V @ 250µA 8 nC @ 5 V 100 V ±20V 235 pF @ 25 V - - SOT-223-4 - 2.2W (Tc) -55°C ~ 150°C (TJ)
SI1056X-T1-E3

SI1056X-T1-E3

MOSFET N-CH 20V 1.32A SC89-6

Vishay Siliconix

3,345 -
SI1056X-T1-E3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.32A (Ta) 1.8V, 4.5V 89mOhm @ 1.32A, 4.5V Surface Mount 950mV @ 250µA 8.7 nC @ 5 V 20 V ±8V 400 pF @ 10 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
SI1058X-T1-E3

SI1058X-T1-E3

MOSFET N-CH 20V 1.3A SC89-6

Vishay Siliconix

7,808 -
SI1058X-T1-E3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 2.5V, 4.5V 91mOhm @ 1.3A, 4.5V Surface Mount 1.55V @ 250µA 5.9 nC @ 5 V 20 V ±12V 380 pF @ 10 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
SI1405BDH-T1-E3

SI1405BDH-T1-E3

MOSFET P-CH 8V 1.6A SC70-6

Vishay Siliconix

3,007 -
SI1405BDH-T1-E3

数据表

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.6A (Tc) 1.8V, 4.5V 112mOhm @ 2.8A, 4.5V Surface Mount 950mV @ 250µA 5.5 nC @ 4.5 V 8 V ±8V 305 pF @ 4 V - - SC-70-6 - 1.47W (Ta), 2.27W (Tc) -55°C ~ 150°C (TJ)
SI3424BDV-T1-E3

SI3424BDV-T1-E3

MOSFET N-CH 30V 8A 6TSOP

Vishay Siliconix

5,611 -
SI3424BDV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 4.5V, 10V 28mOhm @ 7A, 10V Surface Mount 3V @ 250µA 19.6 nC @ 10 V 30 V ±20V 735 pF @ 15 V - - 6-TSOP - 2.1W (Ta), 2.98W (Tc) -55°C ~ 150°C (TJ)
DMP3013SFK-13

DMP3013SFK-13

MOSFET P-CH 30V 10.5A 6UDFN

Diodes Incorporated

9,035 -
DMP3013SFK-13

数据表

- 6-PowerUDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10.5A (Ta) 4.5V, 10V 14mOhm @ 9.5A, 10V Surface Mount 3V @ 250µA 33.7 nC @ 10 V 30 V ±25V 1674 pF @ 15 V - - U-DFN2523-6 - 1W (Ta), 19.5W (Tc) -55°C ~ 150°C (TJ)
FCH130N60

FCH130N60

MOSFET N-CH 600V 28A TO247-3

onsemi

4,224 -
FCH130N60

数据表

SuperFET® II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 130mOhm @ 14A, 10V Through Hole 3.5V @ 250µA 70 nC @ 10 V 600 V ±20V 3590 pF @ 380 V - - TO-247-3 - 278W (Tc) -55°C ~ 150°C (TJ)
IRFH7787TRPBF

IRFH7787TRPBF

MOSFET N-CH 75V 68A PQFN

Infineon Technologies

7,516 -
IRFH7787TRPBF

数据表

HEXFET®, StrongIRFET™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 68A (Tc) 6V, 10V 8mOhm @ 41A, 10V Surface Mount 3.7V @ 100µA 110 nC @ 10 V 75 V ±20V 4030 pF @ 25 V - - PQFN (5x6) - 83W (Tc) -55°C ~ 150°C (TJ)
IRFSL7730PBF

IRFSL7730PBF

MOSFET N-CH 75V 195A TO262

Infineon Technologies

6,910 -
IRFSL7730PBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V Through Hole 3.7V @ 250µA 407 nC @ 10 V 75 V ±20V 13660 pF @ 25 V - - TO-262 - 375W (Tc) -55°C ~ 175°C (TJ)
IRFSL7734PBF

IRFSL7734PBF

MOSFET N-CH 75V 183A TO262

Infineon Technologies

2,002 -
IRFSL7734PBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V Through Hole 3.7V @ 250µA 270 nC @ 10 V 75 V ±20V 10150 pF @ 25 V - - TO-262 - 290W (Tc) -55°C ~ 175°C (TJ)
IRFR7740PBF

IRFR7740PBF

MOSFET N-CH 75V 87A DPAK

Infineon Technologies

3,280 -
IRFR7740PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 87A (Tc) 6V, 10V 7.2mOhm @ 52A, 10V Surface Mount 3.7V @ 100µA 126 nC @ 10 V 75 V ±20V 4430 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
IRFR7746PBF

IRFR7746PBF

MOSFET N-CH 75V 56A DPAK

Infineon Technologies

8,395 -
IRFR7746PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V Surface Mount 3.7V @ 100µA 89 nC @ 10 V 75 V ±20V 3107 pF @ 25 V - - TO-252AA (DPAK) - 99W (Tc) -55°C ~ 175°C (TJ)
IRFS7730-7PPBF

IRFS7730-7PPBF

MOSFET N-CH 75V 240A D2PAK

Infineon Technologies

6,135 -
IRFS7730-7PPBF

数据表

StrongIRFET™ TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 240A (Tc) 6V, 10V 2mOhm @ 100A, 10V Surface Mount 3.7V @ 250µA 428 nC @ 10 V 75 V ±20V 13970 pF @ 25 V - - D2PAK (7-Lead) - 375W (Tc) -55°C ~ 175°C (TJ)
IRFS7730PBF

IRFS7730PBF

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies

3,493 -
IRFS7730PBF

数据表

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V Surface Mount 3.7V @ 250µA 407 nC @ 10 V 75 V ±20V 13660 pF @ 25 V - - TO-263AB (D2PAK) - 375W (Tc) -55°C ~ 175°C (TJ)
IRFS7734-7PPBF

IRFS7734-7PPBF

MOSFET N-CH 75V 197A D2PAK

Infineon Technologies

5,057 -
IRFS7734-7PPBF

数据表

HEXFET®, StrongIRFET™ TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 197A (Tc) 6V, 10V 3.05mOhm @ 100A, 10V Surface Mount 3.7V @ 150µA 270 nC @ 10 V 75 V ±20V 10130 pF @ 25 V - - TO-263AB (D2PAK) - 294W (Tc) -55°C ~ 175°C (TJ)
IRFS7734PBF

IRFS7734PBF

MOSFET N-CH 75V 183A D2PAK

Infineon Technologies

4,810 -
IRFS7734PBF

数据表

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V Surface Mount 3.7V @ 250µA 270 nC @ 10 V 75 V ±20V 10150 pF @ 25 V - - TO-263AB (D2PAK) - 290W (Tc) -55°C ~ 175°C (TJ)
IRFS7762PBF

IRFS7762PBF

MOSFET N-CH 75V 85A D2PAK

Infineon Technologies

6,878 -
IRFS7762PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 85A (Tc) 6V, 10V 6.7mOhm @ 51A, 10V Surface Mount 3.7V @ 100µA 130 nC @ 10 V 75 V ±20V 4440 pF @ 25 V - - TO-263AB (D2PAK) - 140W (Tc) -55°C ~ 175°C (TJ)
IRFS7787PBF

IRFS7787PBF

MOSFET N-CH 75V 76A D2PAK

Infineon Technologies

9,960 -
IRFS7787PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V Surface Mount 3.7V @ 100µA 109 nC @ 10 V 75 V ±20V 4020 pF @ 25 V - - TO-263AB (D2PAK) - 125W (Tc) -55°C ~ 175°C (TJ)
BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1

MOSFET N-CH 25V 170A 2WDSON

Infineon Technologies

3,166 -
BSB012NE2LXIXUMA1

数据表

OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 170A (Tc) 4.5V, 10V 1.2mOhm @ 30A, 10V Surface Mount 2V @ 250µA 82 nC @ 10 V 25 V ±20V 5852 pF @ 12 V - - MG-WDSON-2, CanPAK M™ - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ)
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