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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI1058X-T1-GE3

SI1058X-T1-GE3

MOSFET N-CH 20V SC89-6

Vishay Siliconix

2,871 -
SI1058X-T1-GE3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 2.5V, 4.5V 91mOhm @ 1.3A, 4.5V Surface Mount 1.55V @ 250µA 5.9 nC @ 5 V 20 V ±12V 380 pF @ 10 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
DMP3025LK3-13-01

DMP3025LK3-13-01

MOSFET P-CH 30V 10.6A TO252

Diodes Incorporated

5,463 -
DMP3025LK3-13-01

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16.1A (Ta) 4.5V, 10V 25mOhm @ 7.1A, 10V Surface Mount 3V @ 250µA 31.6 nC @ 10 V 30 V ±20V 1678 pF @ 15 V - - TO-252-3 - 2.15W (Ta) -55°C ~ 150°C (TJ)
AOD32326

AOD32326

30V N-CHANNEL MOSFET

Sanken Electric USA Inc.

8,703 -
AOD32326

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 46A (Tc) 4.5V, 10V 6.2mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 60 nC @ 10 V 30 V ±20V 2500 pF @ 15 V - - TO-252 - 6.2W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
XP264N0301TR-G

XP264N0301TR-G

MOSFET N-CH 60V 300MA SOT23

Torex Semiconductor Ltd

9,127 -
XP264N0301TR-G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300mA (Ta) 4.5V, 10V 1.6Ohm @ 100mA, 10V Surface Mount 2.1V @ 250µA 0.72 nC @ 10 V 60 V ±20V 30 pF @ 20 V - - SOT-23 - 400mW (Ta) 150°C (TJ)
XP231N02013R-G

XP231N02013R-G

MOSFET N-CH 30V 200MA SOT323-3

Torex Semiconductor Ltd

9,524 -
XP231N02013R-G

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200mA (Ta) 2.5V, 4.5V 5Ohm @ 10mA, 4.5V Surface Mount 1.8V @ 250µA 0.18 nC @ 10 V 30 V ±20V 6.5 pF @ 10 V - - SOT-323-3A - 350mW (Ta) 150°C (TJ)
DMT6016LFDF-13

DMT6016LFDF-13

MOSFET N-CH 60V 8.9A 6UDFN

Diodes Incorporated

2,240 -
DMT6016LFDF-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.9A (Ta) 4.5V, 10V 16mOhm @ 10A, 10V Surface Mount 3V @ 250µA 17 nC @ 10 V 60 V ±20V 864 pF @ 30 V - - U-DFN2020-6 (Type F) - 820mW (Ta) -55°C ~ 150°C (TJ)
DMN10H170SVTQ-13

DMN10H170SVTQ-13

MOSFET N-CH 100V 2.6A TSOT26

Diodes Incorporated

4,628 -
DMN10H170SVTQ-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.6A (Ta) 4.5V, 10V 160mOhm @ 5A, 10V Surface Mount 3V @ 250µA 9.7 nC @ 10 V 100 V ±20V 1167 pF @ 25 V - - TSOT-26 - 1.2W (Ta) -55°C ~ 150°C (TJ)
MCG018N06L-TP

MCG018N06L-TP

N-CHANNEL MOSFET,PDFN3333

Micro Commercial Co

6,419 -
MCG018N06L-TP

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 18mOhm @ 20A, 10V Surface Mount 2V @ 250µA 38 nC @ 10 V 60 V ±20V 1850 pF @ 30 V - - PDFN3333 - 59W (Tj) -55°C ~ 150°C (TJ)
20N06

20N06

N60V,25A,RD<24M@10V,VTH1.0V~2.5V

Goford Semiconductor

8,215 -
20N06

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 24mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 25 nC @ 10 V 60 V ±20V 1609 pF @ 30 V - - TO-252 - 41W (Tc) -55°C ~ 150°C (TJ)
NDS331N_D87Z

NDS331N_D87Z

MOSFET N-CH 20V 1.3A SUPERSOT3

onsemi

3,817 -
NDS331N_D87Z

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 2.7V, 4.5V 160mOhm @ 1.5A, 4.5V Surface Mount 1V @ 250µA 5 nC @ 4.5 V 20 V ±8V 162 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
DMT3020LFVW-7

DMT3020LFVW-7

MOSFET N-CH 30V 38A POWERDI3333

Diodes Incorporated

8,442 -
DMT3020LFVW-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 4.5V, 10V 17mOhm @ 9A, 10V Surface Mount 2.5V @ 250µA 7 nC @ 10 V 30 V ±20V 393 pF @ 15 V - - PowerDI3333-8 (Type UX) - 1W (Ta) -55°C ~ 150°C (TJ)
FQD4P40TM-AM002

FQD4P40TM-AM002

MOSFET P-CH 400V 2.7A DPAK

onsemi

8,860 -
FQD4P40TM-AM002

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.7A (Tc) 10V 3.1Ohm @ 1.35A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 400 V ±30V 680 pF @ 25 V - - TO-252AA - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FCPF11N65

FCPF11N65

MOSFET N-CH 650V 11A TO220F

onsemi

2,554 -
FCPF11N65

数据表

SuperFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) - 380mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 52 nC @ 10 V 650 V - 1490 pF @ 25 V - - TO-220F-3 - 36W (Tc) -
CMPDM203NH TR

CMPDM203NH TR

MOSFET N-CH 20V 3.2A SOT-23F

Central Semiconductor Corp

8,189 -
CMPDM203NH TR

数据表

- SOT-23-3 Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.2A (Ta) 2.5V, 4.5V 50mOhm @ 1.6A, 4.5V Surface Mount 1.2V @ 250µA 10 nC @ 4.5 V 20 V 12V 395 pF @ 10 V - - SOT-23F - 350mW (Ta) -55°C ~ 150°C (TJ)
CMPDM303NH TR

CMPDM303NH TR

MOSFET N-CH 30V 3.6A SOT-23F

Central Semiconductor Corp

7,283 -
CMPDM303NH TR

数据表

- SOT-23-3 Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 2.5V, 4.5V 40mOhm @ 1.8A, 4.5V Surface Mount 1.2V @ 250µA 13 nC @ 4.5 V 30 V 12V 590 pF @ 10 V - - SOT-23F - 350mW (Ta) -55°C ~ 150°C (TJ)
DMN6069SFVWQ-13

DMN6069SFVWQ-13

MOSFET BVDSS: 41V~60V POWERDI333

Diodes Incorporated

4,757 -
DMN6069SFVWQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta), 14A (Tc) 4.5V, 10V 69mOhm @ 3A, 10V Surface Mount, Wettable Flank 3V @ 250µA 14 nC @ 10 V 60 V ±20V 740 pF @ 30 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRFS4115-7P

AUIRFS4115-7P

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies

9,848 -
AUIRFS4115-7P

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 105A (Tc) 10V 11.8mOhm @ 63A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 150 V ±20V 5320 pF @ 50 V - - D2PAK (7-Lead) - 380W (Tc) -55°C ~ 175°C (TJ)
PJD5P10A_L2_00001

PJD5P10A_L2_00001

100V P-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

4,462 -
PJD5P10A_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 1.3A (Ta), 5A (Tc) 4.5V, 10V 650mOhm @ 2.5A, 10V Surface Mount 2.5V @ 250µA 8 nC @ 10 V 100 V ±20V 448 pF @ 15 V - - TO-252AA - 2W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
AUIRFS4115-7TRL

AUIRFS4115-7TRL

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies

9,394 -
AUIRFS4115-7TRL

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 105A (Tc) 10V 11.8mOhm @ 63A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 150 V ±20V 5320 pF @ 50 V - - D2PAK (7-Lead) - 380W (Tc) -55°C ~ 175°C (TJ)
PJQ5413_R2_00001

PJQ5413_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

6,038 -
PJQ5413_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 6.5A (Ta), 25A (Tc) 4.5V, 10V 30mOhm @ 4A, 10V Surface Mount 2.5V @ 250µA 7.8 nC @ 4.5 V 30 V ±20V 870 pF @ 15 V - - DFN5060-8 - 2W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
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