富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFB7746PBF

IRFB7746PBF

MOSFET N-CH 75V 59A TO220AB

Infineon Technologies

7,425 -
IRFB7746PBF

数据表

StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 6V, 10V 10.6mOhm @ 35A, 10V Through Hole 3.7V @ 100µA 83 nC @ 10 V 75 V ±20V 3049 pF @ 25 V - - TO-220AB - 99W (Tc) -55°C ~ 175°C (TJ)
IRFB7787PBF

IRFB7787PBF

MOSFET N-CH 75V 76A TO220AB

Infineon Technologies

6,943 -
IRFB7787PBF

数据表

HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V Through Hole 3.7V @ 100µA 109 nC @ 10 V 75 V ±20V 4020 pF @ 25 V - - TO-220AB - 125W (Tc) -55°C ~ 175°C (TJ)
IRFSL7430PBF

IRFSL7430PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

2,442 -
IRFSL7430PBF

数据表

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V Surface Mount 3.9V @ 250µA 460 nC @ 10 V 40 V ±20V 14240 pF @ 25 V - - D2PAK - 375W (Tc) -55°C ~ 175°C (TJ)
SIL03N10A-TP

SIL03N10A-TP

MOSFET

Micro Commercial Co

6,805 -
SIL03N10A-TP

数据表

- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 4.5V, 10V 120mOhm @ 3A, 10V Surface Mount 3V @ 250µA 26 nC @ 10 V 100 V ±20V 1070 pF @ 50 V - - SOT-23-6L - 1.5W -55°C ~ 150°C (TJ)
IRF9393TRPBFXTMA1

IRF9393TRPBFXTMA1

TRENCH <= 40V

Infineon Technologies

5,912 -
IRF9393TRPBFXTMA1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9.2A (Ta) 4.5V, 20V 13.3mOhm @ 9.2A, 20V Surface Mount 2.4V @ 25µA 38 nC @ 10 V 30 V ±25V 1110 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
AON6380

AON6380

MOSFET N-CH 30V 24V 8DFN

Alpha & Omega Semiconductor Inc.

7,145 -
AON6380

数据表

* - Tape & Reel (TR) Not For New Designs - - - - - - - - - - - - - - - - -
CEDM8001 BK PBFREE

CEDM8001 BK PBFREE

MOSFET P-CH 20V 100MA SOT883

Central Semiconductor Corp

7,990 -
CEDM8001 BK PBFREE

数据表

- SC-101, SOT-883 Box Active P-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 8Ohm @ 10mA, 4V Surface Mount 1.1V @ 250µA 0.66 nC @ 4.5 V 20 V 10V 45 pF @ 3 V - - SOT-883 - 100mW (Ta) -65°C ~ 150°C (TJ)
DMT4011LSS-13

DMT4011LSS-13

MOSFET N-CH 40V 10.8A 8SO

Diodes Incorporated

8,513 -
DMT4011LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.8A (Ta) 4.5V, 10V 11.5mOhm @ 20A, 10V Surface Mount 2.4V @ 250µA 14.3 nC @ 10 V 40 V ±20V 829 pF @ 20 V - - 8-SOP - 1.31W (Ta) -55°C ~ 150°C (TJ)
IRFSL7434PBF

IRFSL7434PBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies

5,380 -
IRFSL7434PBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V Through Hole 3.9V @ 250µA 324 nC @ 10 V 40 V ±20V 10820 pF @ 25 V - - TO-262 - 294W (Tc) -55°C ~ 175°C (TJ)
IRFSL7530PBF

IRFSL7530PBF

MOSFET N-CH 60V 195A TO262

Infineon Technologies

9,575 -
IRFSL7530PBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V Surface Mount 3.7V @ 250µA 411 nC @ 10 V 60 V ±20V 13703 pF @ 25 V - - TO-262 - 375W (Tc) -55°C ~ 175°C (TJ)
IRFSL7534PBF

IRFSL7534PBF

MOSFET N-CH 60V 195A TO262

Infineon Technologies

5,735 -
IRFSL7534PBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V Surface Mount 3.7V @ 250µA 279 nC @ 10 V 60 V ±20V 10034 pF @ 25 V - - TO-262 - 294W (Tc) -55°C ~ 175°C (TJ)
IRFSL7787PBF

IRFSL7787PBF

MOSFET N-CH 75V 76A TO262

Infineon Technologies

5,949 -
IRFSL7787PBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V Through Hole 3.7V @ 100µA 109 nC @ 10 V 75 V ±20V 4020 pF @ 25 V - - TO-262 - 125W (Tc) -55°C ~ 175°C (TJ)
IRLS3813TRLPBF

IRLS3813TRLPBF

MOSFET N-CH 30V 160A D2PAK

Infineon Technologies

2,542 -
IRLS3813TRLPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 1.95mOhm @ 148A, 10V Surface Mount 2.35V @ 150µA 83 nC @ 4.5 V 30 V ±20V 8020 pF @ 25 V - - TO-263AB (D2PAK) - 195W (Tc) -55°C ~ 150°C (TJ)
AOT10T60PL

AOT10T60PL

MOSFET N-CH 600V 10A TO220

Alpha & Omega Semiconductor Inc.

8,863 -
AOT10T60PL

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 700mOhm @ 5A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 600 V ±30V 1595 pF @ 100 V - - TO-220 - 208W (Tc) -55°C ~ 150°C (TJ)
PSMN8R5-108ESQ

PSMN8R5-108ESQ

MOSFET N-CH 108V 100A I2PAK

NXP USA Inc.

2,690 -
PSMN8R5-108ESQ

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tj) 10V 8.5mOhm @ 25A, 10V Through Hole 4V @ 1mA 111 nC @ 10 V 108 V ±20V 5512 pF @ 50 V - - I2PAK - 263W (Tc) -55°C ~ 175°C (TJ)
TK10A60E,S5X

TK10A60E,S5X

MOSFET N-CH 600V 10A TO220SIS

Toshiba Semiconductor and Storage

8,862 -
TK10A60E,S5X

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 750mOhm @ 5A, 10V Through Hole 4V @ 1mA 40 nC @ 10 V 600 V ±30V 1300 pF @ 25 V - - TO-220SIS - 45W (Tc) 150°C (TJ)
TK12A50E,S5X

TK12A50E,S5X

MOSFET N-CH 500V 12A TO220SIS

Toshiba Semiconductor and Storage

2,238 -
TK12A50E,S5X

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 520mOhm @ 6A, 10V Through Hole 4V @ 1.2mA 40 nC @ 10 V 500 V ±30V 1300 pF @ 25 V - - TO-220SIS - 45W (Tc) 150°C (TJ)
BUK761R5-40EJ

BUK761R5-40EJ

MOSFET N-CH 40V 120A D2PAK

NXP USA Inc.

6,607 -
BUK761R5-40EJ

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 1.51mOhm @ 25A, 10V Surface Mount 4V @ 1mA 145 nC @ 10 V 40 V ±20V 11340 pF @ 25 V - - D2PAK - 349W (Tc) -55°C ~ 175°C (TJ)
2SJ652-1E

2SJ652-1E

MOSFET P-CH 60V 28A TO220F-3SG

onsemi

8,321 -
2SJ652-1E

数据表

- TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 28A (Ta) 4V, 10V 38mOhm @ 14A, 10V Through Hole - 80 nC @ 10 V 60 V ±20V 4360 pF @ 20 V - - TO-220F-3SG - 2W (Ta), 30W (Tc) 150°C (TJ)
2SJ661-1E

2SJ661-1E

MOSFET P-CH 60V 38A TO262-3

onsemi

3,786 -
2SJ661-1E

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 38A (Ta) 4V, 10V 39mOhm @ 19A, 10V Through Hole - 80 nC @ 10 V 60 V ±20V 4360 pF @ 20 V - - TO-262-3 - 1.65W (Ta), 65W (Tc) 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户