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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRFR4292

AUIRFR4292

MOSFET N-CH 250V 9.3A DPAK

Infineon Technologies

9,935 -
AUIRFR4292

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V Surface Mount 5V @ 50µA 20 nC @ 10 V 250 V ±20V 705 pF @ 25 V - - DPAK - 100W (Tc) -55°C ~ 175°C (TJ)
AUIRFZ48N

AUIRFZ48N

MOSFET N-CH 55V 69A TO220AB

Infineon Technologies

3,172 -
AUIRFZ48N

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 69A (Tc) 10V 14mOhm @ 40A, 10V Through Hole 4V @ 100µA 63 nC @ 10 V 55 V ±20V 1900 pF @ 25 V - - TO-220AB - 160W (Tc) -55°C ~ 175°C (TJ)
AUIRF7805QTR

AUIRF7805QTR

MOSFET N CH 30V 13A 8-SO

Infineon Technologies

8,053 -
AUIRF7805QTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V Surface Mount 3V @ 250µA 31 nC @ 5 V 30 V ±12V - - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRFBA1405

AUIRFBA1405

MOSFET N-CH 55V 95A SUPER-220

Infineon Technologies

4,752 -
AUIRFBA1405

数据表

HEXFET® TO-273AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 95A (Tc) 10V 5mOhm @ 101A, 10V Through Hole 4V @ 250µA 260 nC @ 10 V 55 V ±20V 5480 pF @ 25 V - - SUPER-220™ (TO-273AA) - 330W (Tc) -40°C ~ 175°C (TJ)
AUIRF7805Q

AUIRF7805Q

MOSFET N-CH 30V 13A 8SO

Infineon Technologies

5,601 -
AUIRF7805Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V Surface Mount 3V @ 250µA 31 nC @ 5 V 30 V ±12V - - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRFU540Z

AUIRFU540Z

MOSFET N-CH 100V 35A IPAK

Infineon Technologies

3,749 -
AUIRFU540Z

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 28.5mOhm @ 21A, 10V Through Hole 4V @ 50µA 59 nC @ 10 V 100 V ±20V 1690 pF @ 25 V - - IPAK - 91W (Tc) -55°C ~ 175°C (TJ)
AUIRF7484QTR

AUIRF7484QTR

MOSFET N CH 40V 14A 8-SO

Infineon Technologies

7,942 -
AUIRF7484QTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 7V 10mOhm @ 14A, 7V Surface Mount 2V @ 250µA 100 nC @ 7 V 40 V ±8V 3520 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRF7484Q

AUIRF7484Q

MOSFET N CH 40V 14A 8-SO

Infineon Technologies

2,466 -
AUIRF7484Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 7V 10mOhm @ 14A, 7V Surface Mount 2V @ 250µA 100 nC @ 7 V 40 V ±8V 3520 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRF6215S

AUIRF6215S

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies

2,501 -
AUIRF6215S

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 290mOhm @ 6.6A, 10V Surface Mount 4V @ 250µA 66 nC @ 10 V 150 V ±20V 860 pF @ 25 V - - D2PAK - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ)
AUIRF6218S

AUIRF6218S

MOSFET P-CH 150V 27A D2PAK

Infineon Technologies

3,108 -
AUIRF6218S

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 150mOhm @ 16A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 150 V ±20V 2210 pF @ 25 V - - PG-TO263-3 - 250W (Tc) -55°C ~ 175°C (TJ)
AUIRLR024Z

AUIRLR024Z

MOSFET N CH 55V 16A DPAK

Infineon Technologies

6,039 -
AUIRLR024Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V Surface Mount 3V @ 250µA 9.9 nC @ 5 V 55 V ±16V 380 pF @ 25 V - - TO-252AA (DPAK) - 35W (Tc) -55°C ~ 175°C (TJ)
AUIRLL024Z

AUIRLL024Z

MOSFET N-CH 55V 5A SOT223

Infineon Technologies

2,872 -
AUIRLL024Z

数据表

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V Surface Mount 3V @ 250µA 11 nC @ 5 V 55 V ±16V 380 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AUIRLU024Z

AUIRLU024Z

MOSFET N-CH 55V 16A IPAK

Infineon Technologies

2,245 -
AUIRLU024Z

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V Through Hole 3V @ 250µA 9.9 nC @ 5 V 55 V ±16V 380 pF @ 25 V - - IPAK - 35W (Tc) -55°C ~ 175°C (TJ)
AUIRLL2705

AUIRLL2705

MOSFET N-CH 55V 5.2A SOT223

Infineon Technologies

8,607 -
AUIRLL2705

数据表

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.2A (Ta) 4V, 10V 40mOhm @ 3.8A, 10V Surface Mount 2V @ 250µA 48 nC @ 10 V 55 V ±16V 870 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AUIRF5210S

AUIRF5210S

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies

2,301 -
AUIRF5210S

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 60mOhm @ 38A, 10V Surface Mount 4V @ 250µA 230 nC @ 10 V 100 V ±20V 2780 pF @ 25 V - - D2PAK - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ)
DMN3061SQ-7

DMN3061SQ-7

MOSFET BVDSS: 25V~30V SOT23 T&R

Diodes Incorporated

3,393 -
DMN3061SQ-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.3A (Ta) 3.3V, 10V 59mOhm @ 3.1A, 10V Surface Mount 1.8V @ 250µA 5.5 nC @ 10 V 30 V ±20V 233 pF @ 15 V AEC-Q101 - SOT-23-3 Automotive 770mW (Ta) -55°C ~ 150°C (TJ)
DMN2710UT-7

DMN2710UT-7

MOSFET BVDSS: 8V~24V SOT523 T&R

Diodes Incorporated

3,386 -
DMN2710UT-7

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 870mA (Ta) 1.8V, 4.5V 450mOhm @ 600mA, 4.5V Surface Mount 1V @ 250µA 0.6 nC @ 4.5 V 20 V ±6V 42 pF @ 16 V - - SOT-523 - 320mW (Ta) -55°C ~ 150°C (TJ)
PJA3411-AU_R2_000A1

PJA3411-AU_R2_000A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,753 -
PJA3411-AU_R2_000A1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.1A (Ta) 1.8V, 4.5V 100mOhm @ 3.1A, 4.5V Surface Mount 1.2V @ 250µA 5.4 nC @ 4.5 V 20 V ±12V 416 pF @ 10 V AEC-Q101 - SOT-23 Automotive 1.25W (Ta) -55°C ~ 150°C (TJ)
DMN3060LW-7

DMN3060LW-7

MOSFET BVDSS: 25V~30V SOT323 T&R

Diodes Incorporated

3,606 -
DMN3060LW-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.6A (Ta) 4.5V, 10V 60mOhm @ 3.1A, 10V Surface Mount 1.8V @ 250µA 5.6 nC @ 4.5 V 30 V ±12V 395 pF @ 15 V - - SOT-323 - 500mW (Ta) -55°C ~ 150°C (TJ)
DMP2900UTQ-13

DMP2900UTQ-13

MOSFET BVDSS: 8V~24V SOT523 T&R

Diodes Incorporated

9,772 -
DMP2900UTQ-13

数据表

- SOT-523 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 500mA (Ta) 1.8V, 4.5V 700mOhm @ 430mA, 4.5V Surface Mount 1V @ 250µA 0.7 nC @ 4.5 V 20 V ±6V 49 pF @ 16 V AEC-Q101 - SOT-523 Automotive 250mW (Ta) -55°C ~ 150°C (TJ)
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