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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMN601WKQ-13

DMN601WKQ-13

MOSFET N-CH 60V SOT323

Diodes Incorporated

6,761 -
DMN601WKQ-13

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 4.5V, 10V 2Ohm @ 500mA, 10V Surface Mount 2.5V @ 1mA - 60 V ±20V 50 pF @ 25 V AEC-Q101 - SOT-323 Automotive 200mW (Ta) -65°C ~ 150°C (TJ)
DMN67D8LV-13

DMN67D8LV-13

MOSFET BVDSS: 41V 60V SOT563 T&R

Diodes Incorporated

2,104 -
DMN67D8LV-13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMN62D2U-7

DMN62D2U-7

2N7002 FAMILY SOT23 T&R 3K

Diodes Incorporated

4,234 -
DMN62D2U-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 390mA (Ta) 1.8V, 5V 2Ohm @ 50mA, 5V Surface Mount 1V @ 250µA 0.8 nC @ 4.5 V 60 V ±20V 41 pF @ 30 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
DMN2053UWQ-13

DMN2053UWQ-13

MOSFET BVDSS: 8V~24V SOT323 T&R

Diodes Incorporated

4,860 -
DMN2053UWQ-13

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.9A (Ta) 1.5V, 4.5V 56mOhm @ 2A, 4.5V Surface Mount 1V @ 250µA 3.6 nC @ 4.5 V 20 V ±12V 369 pF @ 10 V AEC-Q101 - SOT-323 Automotive 470mW (Ta) -55°C ~ 150°C (TJ)
DMN2055UWQ-13

DMN2055UWQ-13

MOSFET BVDSS: 8V~24V SOT323 T&R

Diodes Incorporated

9,600 -
DMN2055UWQ-13

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.1A (Ta) 2.5V, 4.5V 46mOhm @ 3.6A, 4.5V Surface Mount 1V @ 250µA 4.3 nC @ 4.5 V 20 V ±8V 400 pF @ 10 V AEC-Q101 - SOT-323 Automotive 520mW (Ta) -55°C ~ 150°C (TJ)
BUK952R8-60E,127

BUK952R8-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.

8,276 -
BUK952R8-60E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 2.6mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 120 nC @ 5 V 60 V ±10V 17450 pF @ 25 V - - TO-220AB - 349W (Tc) -55°C ~ 175°C (TJ)
BUK953R2-40E,127

BUK953R2-40E,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.

2,296 -
BUK953R2-40E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 69.5 nC @ 5 V 40 V ±10V 9150 pF @ 25 V - - TO-220AB - 234W (Tc) -55°C ~ 175°C (TJ)
BUK953R5-60E,127

BUK953R5-60E,127

MOSFET N-CH 60V 120A TO220AB

Nexperia USA Inc.

8,653 -
BUK953R5-60E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 3.4mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 95 nC @ 5 V 60 V ±10V 13490 pF @ 25 V AEC-Q101 - TO-220AB Automotive 293W (Tc) -55°C ~ 175°C (TJ)
BUK954R4-80E,127

BUK954R4-80E,127

MOSFET N-CH 80V 120A TO220AB

NXP USA Inc.

2,375 -
BUK954R4-80E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 4.2mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 123 nC @ 5 V 80 V ±10V 17130 pF @ 25 V - - TO-220AB - 349W (Tc) -55°C ~ 175°C (TJ)
BUK956R1-100E,127

BUK956R1-100E,127

MOSFET N-CH 100V 120A TO220AB

NXP USA Inc.

7,919 -
BUK956R1-100E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 5.9mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 133 nC @ 5 V 100 V ±10V 17460 pF @ 25 V - - TO-220AB - 349W (Tc) -55°C ~ 175°C (TJ)
BUK9E3R2-40E,127

BUK9E3R2-40E,127

MOSFET N-CH 40V 100A I2PAK

NXP USA Inc.

6,470 -
BUK9E3R2-40E,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 69.5 nC @ 5 V 40 V ±10V 9150 pF @ 25 V - - I2PAK - 234W (Tc) -55°C ~ 175°C (TJ)
DMP1080UCB4-7

DMP1080UCB4-7

MOSFET P-CH 12V 3.3A U-WLB1010-4

Diodes Incorporated

6,592 -
DMP1080UCB4-7

数据表

- 4-UFBGA, WLBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.3A (Ta) 1.5V, 4.5V 80mOhm @ 500mA, 4.5V Surface Mount 1V @ 250µA 5 nC @ 4.5 V 12 V -6V 350 pF @ 6 V - - U-WLB1010-4 - 820mW (Ta) -55°C ~ 150°C (TJ)
BUK762R0-40E,118

BUK762R0-40E,118

MOSFET N-CH 40V 120A D2PAK

Nexperia USA Inc.

3,552 -
BUK762R0-40E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2mOhm @ 25A, 10V Surface Mount 4V @ 1mA 109.2 nC @ 10 V 40 V ±20V 8500 pF @ 25 V AEC-Q101 - D2PAK Automotive 293W (Tc) -55°C ~ 175°C (TJ)
BUK762R6-40E,118

BUK762R6-40E,118

MOSFET N-CH 40V 100A D2PAK

Nexperia USA Inc.

3,985 -
BUK762R6-40E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.6mOhm @ 25A, 10V Surface Mount 4V @ 1mA 91 nC @ 10 V 40 V ±20V 7130 pF @ 25 V AEC-Q101 - D2PAK Automotive 263W (Tc) -55°C ~ 175°C (TJ)
BUK954R8-60E,127

BUK954R8-60E,127

MOSFET N-CH 60V 100A TO220AB

Nexperia USA Inc.

7,267 -
BUK954R8-60E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 4.5mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 65 nC @ 5 V 60 V ±10V 9710 pF @ 25 V AEC-Q101 - TO-220AB Automotive 234W (Tc) -55°C ~ 175°C (TJ)
BUK9E1R8-40E,127

BUK9E1R8-40E,127

MOSFET N-CH 40V 120A I2PAK

NXP USA Inc.

6,383 -
BUK9E1R8-40E,127

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 1.7mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 120 nC @ 5 V 40 V ±10V 16400 pF @ 25 V - - I2PAK - 349W (Tc) -55°C ~ 175°C (TJ)
PSMN4R6-100XS,127

PSMN4R6-100XS,127

MOSFET N-CH 100V 70.4A TO220F

NXP USA Inc.

8,113 -
PSMN4R6-100XS,127

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 70.4A (Tc) 10V 4.6mOhm @ 15A, 10V Through Hole 4V @ 1mA 153 nC @ 10 V 100 V ±20V 9900 pF @ 50 V - - TO-220F - 63.8W (Tc) -55°C ~ 175°C (TJ)
IPI020N06NAKSA1

IPI020N06NAKSA1

MOSFET N-CH 60V 29A/120A TO262

Infineon Technologies

3,416 -
IPI020N06NAKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 29A (Ta), 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V Through Hole 2.8V @ 143µA 106 nC @ 10 V 60 V ±20V 7800 pF @ 30 V - - PG-TO262-3-1 - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ)
IPD50R380CEBTMA1

IPD50R380CEBTMA1

MOSFET N-CH 500V 14.1A TO252-3

Infineon Technologies

6,740 -
IPD50R380CEBTMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 14.1A (Tc) 13V 380mOhm @ 3.2A, 13V Surface Mount 3.5V @ 260µA 24.8 nC @ 10 V 500 V ±20V 584 pF @ 100 V - - PG-TO252-3 - 73W (Tc) -55°C ~ 150°C (TJ)
IPA50R190CE

IPA50R190CE

MOSFET N-CH 500V 18.5A TO220-FP

Infineon Technologies

5,456 -
IPA50R190CE

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V Through Hole 3.5V @ 510µA 47.2 nC @ 10 V 500 V ±20V 1137 pF @ 100 V - - PG-TO220-FP - 32W (Tc) -55°C ~ 150°C (TJ)
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