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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
DMN5L06K-7 MOSFET N-CH 50V 300MA SOT23-3 Diodes Incorporated	4,045	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	300mA (Ta)	1.8V, 5V	2Ohm @ 50mA, 5V	Surface Mount	1V @ 250µA	-	50 V	±20V	50 pF @ 25 V	-	-	SOT-23-3	-	350mW (Ta)	-65°C ~ 150°C (TJ)
DMP2065U-13 MOSFET BVDSS: 8V~24V SOT23 T&R 1 Diodes Incorporated	4,906	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	1.8V, 4.5V	60mOhm @ 4.2A, 4.5V	Surface Mount	900mV @ 250µA	10.2 nC @ 4.5 V	20 V	±12V	808 pF @ 15 V	-	-	SOT-23-3	-	900mW	-55°C ~ 150°C (TJ)
BS170_L34Z MOSFET N-CH 60V 500MA TO92-3 onsemi	2,397	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	-	5Ohm @ 200mA, 10V	Through Hole	3V @ 1mA	-	60 V	-	40 pF @ 10 V	-	-	TO-92-3	-	830mW (Ta)	-55°C ~ 150°C (TJ)
DMP2170U-13 MOSFET P-CH 20V 3.1A SOT23 Diodes Incorporated	3,269	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	3.1A (Ta)	2.5V, 4.5V	90mOhm @ 3.5A, 4.5V	Surface Mount	1.25V @ 250µA	7.8 nC @ 10 V	20 V	±12V	303 pF @ 10 V	AEC-Q101	-	SOT-23-3	Automotive	780mW (Ta)	-55°C ~ 150°C (TJ)
DMN2056U-13 MOSFET N-CHANNEL 20V 4A SOT23-3 Diodes Incorporated	7,152	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	1.5V, 4.5V	38mOhm @ 3.6A, 4.5V	Surface Mount	1V @ 250µA	4.3 nC @ 4.5 V	20 V	±8V	339 pF @ 10 V	-	-	SOT-23-3	-	940mW	-55°C ~ 150°C (TJ)
IRFB7434GPBF MOSFET N CH 40V 195A TO220AB Infineon Technologies	7,686	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	1.6mOhm @ 100A, 10V	Through Hole	3.9V @ 250µA	324 nC @ 10 V	40 V	±20V	10820 pF @ 25 V	-	-	TO-220-3	-	-	-
DMN3032LQ-13 MOSFET BVDSS: 8V~24V SOT23 T&R 1 Diodes Incorporated	7,955	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.4A (Ta)	4.5V, 10V	31mOhm @ 5.8A, 10V	Surface Mount	2V @ 250µA	10.1 nC @ 10 V	30 V	±20V	481 pF @ 15 V	AEC-Q101	-	SOT-23-3	Automotive	800mW	-55°C ~ 150°C (TJ)
DMN2040UQ-13 MOSFET BVDSS: 8V~24V SOT23 T&R 1 Diodes Incorporated	8,318	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	2.5V, 4.5V	25mOhm @ 8.2A, 4.5V	Surface Mount	1.2V @ 250µA	7.5 nC @ 4.5 V	20 V	±12V	667 pF @ 10 V	AEC-Q101	-	SOT-23-3	Automotive	800mW (Ta)	-55°C ~ 150°C (TJ)
IRFB7446GPBF MOSFET N CH 40V 120A TO220AB Infineon Technologies	5,526	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	6V, 10V	3.3mOhm @ 70A, 10V	Through Hole	3.9V @ 100µA	93 nC @ 10 V	40 V	±20V	3183 pF @ 25 V	-	-	TO-220AB	-	99W (Tc)	-
SI8810-TP Interface Micro Commercial Co	7,726	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A	1.8V, 10V	20mOhm @ 7A, 10V	Surface Mount	1V @ 250µA	15 nC @ 10 V	20 V	±12V	890 pF @ 10 V	-	-	SOT-23	-	300mW	-55°C ~ 150°C
AUIRF4905STRL MOSFET P-CH 55V 42A D2PAK Infineon Technologies	2,575	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	20mOhm @ 42A, 10V	Surface Mount	4V @ 250µA	180 nC @ 10 V	55 V	±20V	3500 pF @ 25 V	AEC-Q101	-	PG-TO263-3	Automotive	200W (Tc)	-55°C ~ 150°C (TJ)
IRFU3607-701PBF MOSFET N-CH 75V 56A IPAK Infineon Technologies	2,294	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	9mOhm @ 46A, 10V	Through Hole	4V @ 100µA	84 nC @ 10 V	75 V	±20V	3070 pF @ 50 V	-	-	IPAK (TO-251AA)	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRFP4332-203PBF MOSFET N-CH 250V 57A TO247AC Infineon Technologies	9,747	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	33mOhm @ 35A, 10V	Through Hole	5V @ 250µA	150 nC @ 10 V	250 V	±30V	5860 pF @ 25 V	-	-	TO-247AC	-	360W (Tc)	-40°C ~ 175°C (TJ)
IRFU3607TRL701P MOSFET N CH 75V 56A IPAK Infineon Technologies	7,855	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	9mOhm @ 46A, 10V	Through Hole	4V @ 100µA	84 nC @ 10 V	75 V	±20V	3070 pF @ 50 V	-	-	IPAK (TO-251AA)	-	140W (Tc)	-55°C ~ 175°C (TJ)
AUIRFR540Z MOSFET N-CH 100V 35A DPAK Infineon Technologies	8,032	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	28.5mOhm @ 21A, 10V	Surface Mount	4V @ 50µA	59 nC @ 10 V	100 V	±20V	1690 pF @ 25 V	-	-	DPAK	-	91W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS6535 MOSFET N-CH 300V 19A D2PAK Infineon Technologies	6,598	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	185mOhm @ 11A, 10V	Surface Mount	5V @ 150µA	57 nC @ 10 V	300 V	±20V	2340 pF @ 25 V	-	-	PG-TO263-3	-	210W (Tc)	-55°C ~ 175°C (TJ)
AUIRFU3607 MOSFET N CH 75V 56A I-PAK Infineon Technologies	6,893	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	9mOhm @ 46A, 10V	Through Hole	4V @ 100µA	84 nC @ 10 V	75 V	±20V	3070 pF @ 50 V	-	-	IPAK	-	140W (Tc)	-55°C ~ 175°C (TJ)
BSS127 E6327 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	3,677	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21mA (Ta)	4.5V, 10V	500Ohm @ 16mA, 10V	Surface Mount	2.6V @ 8µA	1 nC @ 10 V	600 V	±20V	28 pF @ 25 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
TK16J60W,S1VQ MOSFET N-CH 600V 15.8A TO3P Toshiba Semiconductor and Storage	4,674	-	询价单	数据表	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 790µA	38 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-3P(N)	-	130W (Tc)	150°C (TJ)
DMN67D8LV-7 MOSFET BVDSS: 41V 60V SOT563 T&R Diodes Incorporated	9,205	-	询价单	数据表	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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