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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SICW040N120Y4-BP

SICW040N120Y4-BP

MOSFET N-CH 1200V 63A TO247-4

Micro Commercial Co

5,092 -
SICW040N120Y4-BP

数据表

- TO-247-4 Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 63A (Tc) 20V 52mOhm @ 40A, 20V Through Hole 3.5V @ 10mA 120 nC @ 20 V 1200 V +25V, -10V 2225 pF @ 1000 V - - TO-247-4 - 390W -55°C ~ 175°C (TJ)
MCU110N06YA-TP

MCU110N06YA-TP

N-CHANNEL MOSFET,DPAK

Micro Commercial Co

4,828 -
MCU110N06YA-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 4.5V, 10V 4.4mOhm @ 55A, 10V Surface Mount 2.5V @ 250µA 90 nC @ 10 V 60 V ±20V 5450 pF @ 30 V - - TO-252 (DPAK) - 89W -55°C ~ 150°C (TJ)
MCB160N04Y-TP

MCB160N04Y-TP

N-CHANNEL MOSFET, D2-PAK

Micro Commercial Co

1,205 -
MCB160N04Y-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 4.5V, 10V 1.85mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 132 nC @ 20 V 40 V ±20V 7100 pF @ 25 V - - D2PAK - 150W -55°C ~ 150°C (TJ)
MSJP11N65-BP

MSJP11N65-BP

MOSFET N-CH 650V 11A TO220AB

Micro Commercial Co

4,926 -
MSJP11N65-BP

数据表

- TO-220-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 650 V ±30V 901 pF @ 50 V - - TO-220AB (H) - 78W (Tc) -55°C ~ 150°C (TJ)
SICW021N120P-BP

SICW021N120P-BP

SIC MOSFET,TO-247AB

Micro Commercial Co

2,051 -
SICW021N120P-BP

数据表

- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 100A (Tc) 18V 29.4mOhm @ 50A, 18V Through Hole 4.5V @ 17mA 200 nC @ 18 V 1200 V +22V, -10V 3741 pF @ 800 V - - TO-247AB - 469W -55°C ~ 175°C (TJ)
SICW021N120P4-BP

SICW021N120P4-BP

SIC MOSFET,TO-247-4L

Micro Commercial Co

4,270 -
SICW021N120P4-BP

数据表

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 100A (Tc) 18V 29.4mOhm @ 50A, 18V Through Hole 4.5V @ 17mA 200 nC @ 18 V 1200 V +18V, -5V 3741 pF @ 800 V - - TO-247-4 - 469W (Tc) -55°C ~ 175°C (TJ)
MCB90N12A-TP

MCB90N12A-TP

N-CHANNEL MOSFET,D2-PAK

Micro Commercial Co

1,544 -
MCB90N12A-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 9mOhm @ 45A, 10V Surface Mount 3V @ 250µA 72 nC @ 10 V 120 V ±20V 4600 pF @ 60 V - - D2PAK - 138W -55°C ~ 150°C (TJ)
MSJPF11N65-BP

MSJPF11N65-BP

MOSFET N-CH 650V 11A TO220F

Micro Commercial Co

8,441 -
MSJPF11N65-BP

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 650 V ±30V 901 pF @ 50 V - - TO-220F - 31.3W (Tc) -55°C ~ 150°C (TJ)
MCB130N10Y-TP

MCB130N10Y-TP

MOSFET N-CH 100V 130A D2PAK

Micro Commercial Co

33,151 -
MCB130N10Y-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 4.6mOhm @ 60A, 10V Surface Mount 4V @ 250µA 101.6 nC @ 10 V 100 V ±20V 6124.6 pF @ 50 V - - D2PAK - 192W (Tc) -55°C ~ 150°C (TJ)
MCU110N08Y-TP

MCU110N08Y-TP

N-CHANNEL MOSFET,DPAK

Micro Commercial Co

5,000 -
MCU110N08Y-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 4.5V, 10V 6mOhm @ 55A, 10V Surface Mount 2.5V @ 250µA 95 nC @ 10 V 80 V ±20V 6500 pF @ 40 V - - TO-252 (DPAK) - 83W -55°C ~ 150°C (TJ)
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