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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SICW020N065H-BP

SICW020N065H-BP

SIC MOSFETS,TO-247AB

Micro Commercial Co

9,166 -
SICW020N065H-BP

数据表

- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 107A (Tc) 20V 26mOhm @ 50A, 20V Through Hole 4.5V @ 50mA 287 nC @ 20 V 650 V +25V, -10V 5740 pF @ 400 V - - TO-247AB - 375W (Tc) -55°C ~ 175°C (TJ)
SICW020N065H4-BP

SICW020N065H4-BP

SIC MOSFETS,TO-247-4

Micro Commercial Co

2,377 -
SICW020N065H4-BP

数据表

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 107A (Tc) 20V 26mOhm @ 50A, 20V Through Hole 4.5V @ 50mA 287 nC @ 20 V 650 V +20V, -5V 5740 pF @ 400 V - - TO-247-4 - 375W (Tc) -55°C ~ 175°C (TJ)
SICW030N120H-BP

SICW030N120H-BP

SIC MOSFETS,TO-247AB

Micro Commercial Co

9,579 -
SICW030N120H-BP

数据表

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 78A (Tc) 20V 40mOhm @ 40A, 20V Through Hole 4.5V @ 50mA 305 nC @ 20 V 1200 V +25V, -10V 4909 pF @ 800 V - - TO-247AB - 375W (Tc) -55°C ~ 175°C (TJ)
SICW030N120H4-BP

SICW030N120H4-BP

SIC MOSFETS,TO-247-4

Micro Commercial Co

6,904 -
SICW030N120H4-BP

数据表

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 78A (Tc) 20V 40mOhm @ 40A, 20V Through Hole 4.5V @ 50mA 305 nC @ 20 V 1200 V +20V, -5V 4909 pF @ 800 V - - TO-247-4 - 375W (Tc) -55°C ~ 175°C (TJ)
MCG55P02A-TP

MCG55P02A-TP

P-CHANNEL MOSFET, DFN3333

Micro Commercial Co

8,042 -
MCG55P02A-TP

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 55A 1.8V, 4.5V 8.3mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 149 nC @ 10 V 20 V ±10V 6358 pF @ 10 V - - DFN3333 - 3.2W (Ta), 38W (Tc) -55°C ~ 150°C (TJ)
MCAC80N08Y-TP

MCAC80N08Y-TP

MOSFET N-CH 80 80A DFN5060

Micro Commercial Co

1,625 -
MCAC80N08Y-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) - 3.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 102 nC @ 10 V 80 V ±20V 5575 pF @ 40 V - - DFN5060 - 35W -55°C ~ 150°C (TJ)
SICW080N120Y-BP

SICW080N120Y-BP

MOSFET N-CH 1200V 38A TO247-3

Micro Commercial Co

3,510 -
SICW080N120Y-BP

数据表

- TO-247-3 Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 38A 18V 85mOhm @ 20A, 18V Through Hole 3.6V @ 5mA 41 nC @ 18 V 1200 V +22V, -8V 890 pF @ 1000 V - - TO-247-3 - 220W (Tc) -55°C ~ 175°C (TJ)
MSJP11N65A-BP

MSJP11N65A-BP

N-CHANNEL MOSFET,TO-220

Micro Commercial Co

4,971 -
MSJP11N65A-BP

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 11A 10V 380mOhm @ 3.2A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 650 V ±30V 763 pF @ 25 V - - TO-220AB - 83.3W (Tc) -55°C ~ 150°C (TJ)
MCU95N06KY-TP

MCU95N06KY-TP

N-CHANNEL MOSFET,DPAK

Micro Commercial Co

4,703 -
MCU95N06KY-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 95A 4.5V, 10V 5.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 72.84 nC @ 10 V 60 V ±20V 4159 pF @ 30 V - - TO-252 (DPAK) - 160W -55°C ~ 150°C (TJ)
SICW040N120Y-BP

SICW040N120Y-BP

MOSFET N-CH 1200V 63A TO247AB

Micro Commercial Co

9,293 -
SICW040N120Y-BP

数据表

- TO-247-3 Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 63A (Tc) 20V 52mOhm @ 40A, 20V Through Hole 3.5V @ 10mA 120 nC @ 20 V 1200 V +25V, -10V 2225 pF @ 1000 V - - TO-247AB - 390W (Tc) -55°C ~ 175°C (TJ)
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