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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT9M100S/TR

APT9M100S/TR

MOSFET MOS8 1000 V 9 A TO-268

Microchip Technology

324 -
APT9M100S/TR

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 1.4Ohm @ 5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 1000 V ±30V 2605 pF @ 25 V - - D3PAK - 335W (Tc) -55°C ~ 150°C (TJ)
IRFR214TRRPBF

IRFR214TRRPBF

MOSFET N-CH 250V 2.2A DPAK

Vishay Siliconix

2,392 -
IRFR214TRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V Surface Mount 4V @ 250µA 8.2 nC @ 10 V 250 V ±20V 140 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
STL38N65M5

STL38N65M5

MOSFET N-CH 650V PWRFLAT HV

STMicroelectronics

5,997 -
STL38N65M5

数据表

MDmesh™ V 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta), 22.5A (Tc) 10V 105mOhm @ 12.5A, 10V Surface Mount 5V @ 250µA 71 nC @ 10 V 650 V ±25V 3000 pF @ 100 V - - PowerFlat™ (8x8) HV - 2.8W (Ta), 150W (Tc) 150°C (TJ)
IPA60R360P7SE8228XKSA1

IPA60R360P7SE8228XKSA1

MOSFET N-CH 600V 9A TO220

Infineon Technologies

3,412 -
IPA60R360P7SE8228XKSA1

数据表

CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 360mOhm @ 2.7A, 10V Through Hole 4V @ 140µA 13 nC @ 10 V 600 V ±20V 555 pF @ 400 V - - PG-TO220-FP - 22W (Tc) -40°C ~ 150°C (TJ)
SI4831DY-T1-E3

SI4831DY-T1-E3

MOSFET P-CH 30V 5A 8-SOIC

Vishay Siliconix

7,882 -
SI4831DY-T1-E3

数据表

LITTLE FOOT® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5A (Ta) 4.5V, 10V 45mOhm @ 5A, 10V Surface Mount 1V @ 250µA (Min) 20 nC @ 5 V 30 V ±20V - - Schottky Diode (Isolated) 8-SOIC - 2W (Ta) -55°C ~ 150°C (TJ)
R6050JNZC17

R6050JNZC17

MOSFET N-CH 600V 50A TO3PF

Rohm Semiconductor

189 -
R6050JNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 15V 83mOhm @ 25A, 15V Through Hole 7V @ 5mA 120 nC @ 15 V 600 V ±30V 4500 pF @ 100 V - - TO-3PF - 120W (Tc) 150°C (TJ)
STP4NK50Z

STP4NK50Z

MOSFET N-CH 500V 3A TO220AB

STMicroelectronics

3,176 -
STP4NK50Z

数据表

SuperMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 2.7Ohm @ 1.5A, 10V Through Hole 4.5V @ 50µA 12 nC @ 10 V 500 V ±30V 310 pF @ 25 V - - TO-220 - 45W (Tc) -55°C ~ 150°C (TJ)
STP11NM80

STP11NM80

MOSFET N-CH 800V 11A TO220AB

STMicroelectronics

682 -
STP11NM80

数据表

MDmesh™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 43.6 nC @ 10 V 800 V ±30V 1630 pF @ 25 V - - TO-220 - 150W (Tc) -65°C ~ 150°C (TJ)
FQD9N25TF

FQD9N25TF

MOSFET N-CH 250V 7.4A DPAK

onsemi

6,235 -
FQD9N25TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V Surface Mount 5V @ 250µA 20 nC @ 10 V 250 V ±30V 700 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
IXFA230N075T2-7

IXFA230N075T2-7

MOSFET N-CH 75V 230A TO263-7

Littelfuse Inc.

340 -
IXFA230N075T2-7

数据表

HiPerFET™, TrenchT2™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel MOSFET (Metal Oxide) 230A (Tc) 10V 4.2mOhm @ 50A, 10V Surface Mount 4V @ 1mA 178 nC @ 10 V 75 V ±20V 10500 pF @ 25 V - - TO-263-7 - 480W (Tc) -55°C ~ 175°C (TJ)
FQD3N60TF

FQD3N60TF

MOSFET N-CH 600V 2.4A DPAK

onsemi

3,646 -
FQD3N60TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V Surface Mount 5V @ 250µA 13 nC @ 10 V 600 V ±30V 450 pF @ 25 V - - TO-252AA - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
R6024KNZC17

R6024KNZC17

MOSFET N-CH 600V 24A TO3PF

Rohm Semiconductor

300 -
R6024KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 5V @ 1mA 45 nC @ 10 V 600 V ±20V 2000 pF @ 25 V - - TO-3PF - 74W (Tc) 150°C (TJ)
FQD12N20TF

FQD12N20TF

MOSFET N-CH 200V 9A DPAK

onsemi

5,526 -
FQD12N20TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 280mOhm @ 4.5A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 200 V ±30V 910 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
R6024ENZC17

R6024ENZC17

MOSFET N-CH 600V 24A TO3PF

Rohm Semiconductor

300 -
R6024ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 4V @ 1mA 70 nC @ 10 V 600 V ±20V 1650 pF @ 25 V - - TO-3PF - 120W (Tc) 150°C (TJ)
MCU18N20A-TP

MCU18N20A-TP

MOSFET N-CH ENH FET 200VDS 30VGS

Micro Commercial Co

6,691 -
MCU18N20A-TP

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
IRLZ44ZPBF

IRLZ44ZPBF

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies

6,878 -
IRLZ44ZPBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V Through Hole 3V @ 250µA 36 nC @ 5 V 55 V ±16V 1620 pF @ 25 V - - TO-220AB - 80W (Tc) -55°C ~ 175°C (TJ)
STD2NK70Z-1

STD2NK70Z-1

MOSFET N-CH 700V 1.6A IPAK

STMicroelectronics

4,319 -
STD2NK70Z-1

数据表

SuperMESH™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 7Ohm @ 800mA, 10V Through Hole 4.5V @ 50µA 11.4 nC @ 10 V 700 V ±30V 280 pF @ 25 V - - IPAK - 45W (Tc) -55°C ~ 150°C (TJ)
NTTFS004P02P8

NTTFS004P02P8

POWER MOSFET, SINGLE, P-CHANNEL,

onsemi

3,643 -
NTTFS004P02P8

数据表

PowerTrench® 8-PowerWDFN Bulk Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 18A (Ta), 56A (Tc) 1.8V, 4.5V 4mOhm @ 18A, 4.5V Surface Mount 1V @ 250µA 122 nC @ 4.5 V 20 V ±8V 13200 pF @ 10 V - - 8-PQFN (3.3x3.3) - 2.3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ)
NVC160N120SC1

NVC160N120SC1

SILICON CARBIDE MOSFET, NCHANNEL

onsemi

9,665 -
NVC160N120SC1

数据表

- Die Bulk Discontinued at Digi-Key N-Channel SiCFET (Silicon Carbide) 17A (Tc) 20V 224mOhm @ 12A, 20V Surface Mount 4.3V @ 2.5mA 34 nC @ 20 V 1200 V +25V, -15V 665 pF @ 800 V AEC-Q101 - Die Automotive 119W (Tc) -55°C ~ 175°C (TJ)
NVRGS042N04CLT1G

NVRGS042N04CLT1G

SINGLE N-CHANNEL LOGIC LEVEL POW

onsemi

3,394 -
NVRGS042N04CLT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 5.2A (Ta) 4.5V, 10V 34mOhm @ 5A, 10V Surface Mount 2.2V @ 250µA 8.8 nC @ 10 V 40 V ±20V 423 pF @ 25 V AEC-Q101 - SOT-23-3 (TO-236) Automotive 1.5W (Ta) -55°C ~ 175°C (TJ)
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