富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IST015N06NM5AUMA1

IST015N06NM5AUMA1

OPTIMOS 5 POWER MOSFET 60 V

Infineon Technologies

1,081 -
IST015N06NM5AUMA1

数据表

OptiMOS™ 5 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36A (Ta), 242A (Tc) 6V, 10V 1.5mOhm @ 50A, 10V Surface Mount 3.3V @ 95µA 89 nC @ 10 V 60 V ±20V 5200 pF @ 30 V - - PG-HSOF-5-1 - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
NTMFS6D7N08XT1G

NTMFS6D7N08XT1G

POWERTRENCHT10 MOSFET, SINGLE, N

onsemi

5,861 -
NTMFS6D7N08XT1G

数据表

- 8-PowerTDFN, 5 Leads Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 68.3A (Tc) 10V 6.7mOhm @ 15A, 10V Surface Mount 3.6V @ 75µA 18.2 nC @ 10 V 80 V ±20V 1293 pF @ 40 V - - 5-DFN (5x6) (8-SOFL) - 67.6W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C673NLAFT3G

NVMFS5C673NLAFT3G

MOSFET N-CHANNEL 60V 50A 5DFN

onsemi

5,371 -
NVMFS5C673NLAFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 9.2mOhm @ 25A, 10V Surface Mount 2V @ 35µA 9.5 nC @ 10 V 60 V ±20V 880 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 46W (Tc) -55°C ~ 175°C (TJ)
NVCR8LS040N65S3FA

NVCR8LS040N65S3FA

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2,080 -
NVCR8LS040N65S3FA

数据表

- Die Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 65A (Tc) 10V 40mOhm @ 32.5A, 10V Surface Mount 5V @ 2.1mA 153 nC @ 10 V 650 V ±30V 5875 pF @ 400 V AEC-Q101 - Die Automotive 446W (Tc) -55°C ~ 150°C (TJ)
AUIRFB8407

AUIRFB8407

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

1,000 -
AUIRFB8407

数据表

HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 195A (Tc) 10V 2mOhm @ 100A, 10V Through Hole 4V @ 150µA 225 nC @ 10 V 40 V ±20V 7330 pF @ 25 V - - TO-220AB - 230W (Tc) -55°C ~ 175°C (TJ)
IPD65R950C6ATMA1

IPD65R950C6ATMA1

MOSFET N-CH 650V 4.5A TO252-3

Infineon Technologies

2,856 -
IPD65R950C6ATMA1

数据表

CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 950mOhm @ 1.5A, 10V Surface Mount 3.5V @ 200µA 15.3 nC @ 10 V 650 V ±20V 328 pF @ 100 V - - PG-TO252-3 - 37W (Tc) -55°C ~ 150°C (TJ)
R8008ANJGTL

R8008ANJGTL

NCH 800V 8A POWER MOSFET : R8008

Rohm Semiconductor

851 -
R8008ANJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.03Ohm @ 4A, 10V Surface Mount 5V @ 1mA 38 nC @ 10 V 800 V ±30V 1100 pF @ 25 V - - TO-263S - 195W (Tc) 150°C (TJ)
R6520KNZC17

R6520KNZC17

MOSFET N-CH 650V 20A TO3

Rohm Semiconductor

299 -
R6520KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Through Hole 5V @ 630µA 40 nC @ 10 V 650 V ±20V 1550 pF @ 25 V - - TO-3PF - 68W (Tc) 150°C (TJ)
AOY66920

AOY66920

N

Alpha & Omega Semiconductor Inc.

4,168 -
AOY66920

数据表

AlphaSGT™ TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 19.5A (Ta), 70A (Tc) 4.5V, 10V 8.2mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 50 nC @ 10 V 100 V ±20V 2500 pF @ 50 V - - TO-251B - 6.2W (Ta), 89W (Tc) -55°C ~ 150°C (TJ)
STB36N60M6

STB36N60M6

MOSFET N-CH 600V 30A D2PAK

STMicroelectronics

944 -
STB36N60M6

数据表

MDmesh™ M6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 99mOhm @ 15A, 10V Surface Mount 4.75V @ 250µA 44.3 nC @ 10 V 600 V ±25V 1960 pF @ 100 V - - TO-263 (D2PAK) - 208W (Tc) -55°C ~ 150°C (TJ)
DMTH63M6LPSWQ-13

DMTH63M6LPSWQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

2,271 -
DMTH63M6LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 105A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 44.8 nC @ 10 V 60 V ±20V 2479 pF @ 30 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3.3W (Ta), 84.7W (Tc) -55°C ~ 175°C (TJ)
FQP19N10L

FQP19N10L

MOSFET N-CH 100V 19A TO220-3

onsemi

4,852 -
FQP19N10L

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 5V, 10V 100mOhm @ 9.5A, 10V Through Hole 2V @ 250µA 18 nC @ 5 V 100 V ±20V 870 pF @ 25 V - - TO-220-3 - 75W (Tc) -55°C ~ 175°C (TJ)
IPB09N03LAT

IPB09N03LAT

MOSFET N-CH 25V 50A TO263-3

Infineon Technologies

7,449 -
IPB09N03LAT

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 8.9mOhm @ 30A, 10V Surface Mount 2V @ 20µA 13 nC @ 5 V 25 V ±20V 1642 pF @ 15 V - - PG-TO263-3-2 - 63W (Tc) -55°C ~ 175°C (TJ)
R6055VNZC17

R6055VNZC17

600V 23A TO-3PF, PRESTOMOS WITH

Rohm Semiconductor

420 -
R6055VNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V, 15V 71mOhm @ 16A, 15V Through Hole 6.5V @ 1.5mA 80 nC @ 10 V 600 V ±30V 3700 pF @ 100 V - - TO-3PF - 99W (Tc) 150°C (TJ)
DI045N10PQ-AQ

DI045N10PQ-AQ

MOSFET PWRQFN 5X6 100V 0.0065OHM

Diotec Semiconductor

4,691 -
DI045N10PQ-AQ

数据表

- - Tape & Reel (TR) Active N-Channel - 45A - - Surface Mount - - - - - - - PowerQFN 5x6 - 110W -
FQPF16N15

FQPF16N15

MOSFET N-CH 150V 11.6A TO220F

onsemi

7,106 -
FQPF16N15

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11.6A (Tc) 10V 160mOhm @ 5.8A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 150 V ±25V 910 pF @ 25 V - - TO-220F-3 - 53W (Tc) -55°C ~ 175°C (TJ)
IRLL2703TR

IRLL2703TR

MOSFET N-CH 30V 3.9A SOT223

Infineon Technologies

3,457 -
IRLL2703TR

数据表

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.9A (Ta) 4V, 10V 45mOhm @ 3.9A, 10V Surface Mount 2.4V @ 250µA 14 nC @ 5 V 30 V ±16V 530 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
STL45P3LLH6

STL45P3LLH6

MOSFET P-CH 30V 45A POWERFLAT

STMicroelectronics

9,966 -
STL45P3LLH6

数据表

STripFET™ H6 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 45A (Tc) 4.5V, 10V 13mOhm @ 6A, 10V Surface Mount 1V @ 250µA 24 nC @ 4.5 V 30 V ±20V 2615 pF @ 25 V - - PowerFlat™ (5x6) - 4.8W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
FQPF50N06

FQPF50N06

MOSFET N-CH 60V 31A TO220F

onsemi

5,463 -
FQPF50N06

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 22mOhm @ 15.5A, 10V Through Hole 4V @ 250µA 41 nC @ 10 V 60 V ±25V 1540 pF @ 25 V - - TO-220F-3 - 47W (Tc) -55°C ~ 175°C (TJ)
IRLMS1902TRPBF

IRLMS1902TRPBF

MOSFET N-CH 20V 3.2A MICRO6

Infineon Technologies

3,417 -
IRLMS1902TRPBF

数据表

HEXFET® SOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.2A (Ta) 2.7V, 4.5V 100mOhm @ 2.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 7 nC @ 4.5 V 20 V ±12V 300 pF @ 15 V - - Micro6™(TSOP-6) - 1.7W (Ta) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户