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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI1069X-T1-GE3

SI1069X-T1-GE3

MOSFET P-CH 20V 0.94A SC89-6

Vishay Siliconix

6,695 -
SI1069X-T1-GE3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 940mA (Ta) 2.5V, 4.5V 184mOhm @ 940mA, 4.5V Surface Mount 1.5V @ 250µA 6.86 nC @ 5 V 20 V ±12V 308 pF @ 10 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
IRLML2502GTRPBF

IRLML2502GTRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

5,224 -
IRLML2502GTRPBF

数据表

HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.2A (Ta) 2.5V, 4.5V 45mOhm @ 4.2A, 4.5V Surface Mount 1.2V @ 250µA 12 nC @ 5 V 20 V ±12V 740 pF @ 15 V - - Micro3™/SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
IRLML5103GTRPBF

IRLML5103GTRPBF

MOSFET P-CH 30V 0.76A SOT-23-3

Infineon Technologies

4,037 -
IRLML5103GTRPBF

数据表

HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 760mA (Ta) 4.5V, 10V 600mOhm @ 600mA, 10V Surface Mount 1V @ 250µA 5.1 nC @ 10 V 30 V ±20V 75 pF @ 25 V - - Micro3™/SOT-23 - 540mW (Ta) -55°C ~ 150°C (TJ)
SIB455EDK-T1-GE3

SIB455EDK-T1-GE3

MOSFET P-CH 12V 9A PPAK SC75-6

Vishay Siliconix

2,511 -
SIB455EDK-T1-GE3

数据表

TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Tc) 1.5V, 4.5V 27mOhm @ 5.6A, 4.5V Surface Mount 1V @ 250µA 30 nC @ 8 V 12 V ±10V - - - PowerPAK® SC-75-6 - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
IPD60R2K1CEBTMA1

IPD60R2K1CEBTMA1

MOSFET N-CH 600V 2.3A TO252-3

Infineon Technologies

6,447 -
IPD60R2K1CEBTMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V Surface Mount 3.5V @ 60µA 6.7 nC @ 10 V 600 V ±20V 140 pF @ 100 V - - PG-TO252-3 - 22W (Tc) -40°C ~ 150°C (TJ)
STP13N95K3

STP13N95K3

MOSFET N-CH 950V 10A TO220

STMicroelectronics

995 -
STP13N95K3

数据表

SuperMESH3™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 850mOhm @ 5A, 10V Through Hole 5V @ 100µA 51 nC @ 10 V 950 V ±30V 1620 pF @ 100 V - - TO-220 - 190W (Tc) -55°C ~ 150°C (TJ)
IXFA22N65X2-TRL

IXFA22N65X2-TRL

MOSFET N-CH 650V 22A TO263

Littelfuse Inc.

800 -
IXFA22N65X2-TRL

数据表

HiPerFET™, Ultra X2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 145mOhm @ 11A, 10V Surface Mount 5V @ 1.5mA 37 nC @ 10 V 650 V ±30V 2190 pF @ 25 V - - TO-263 (D2PAK) - 390W (Tc) -55°C ~ 150°C (TJ)
FDBL0260N100

FDBL0260N100

MOSFET N-CH 100V 200A 8HPSOF

onsemi

3,815 -
FDBL0260N100

数据表

PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 2.6mOhm @ 80A, 10V Surface Mount 4V @ 250µA 116 nC @ 10 V 100 V ±20V 9265 pF @ 50 V - - 8-HPSOF - 3.5W (Ta), 250W (Tc) -55°C ~ 150°C (TJ)
IXTH76N25T

IXTH76N25T

MOSFET N-CH 250V 76A TO247

Littelfuse Inc.

296 -
IXTH76N25T

数据表

Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 39mOhm @ 500mA, 10V Through Hole 5V @ 1mA 92 nC @ 10 V 250 V ±30V 4500 pF @ 25 V - - TO-247 (IXTH) - 460W (Tc) -55°C ~ 150°C (TJ)
IXTQ50N25T

IXTQ50N25T

MOSFET N-CH 250V 50A TO3P

Littelfuse Inc.

230 -
IXTQ50N25T

数据表

Trench TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 60mOhm @ 25A, 10V Through Hole 5V @ 1mA 78 nC @ 10 V 250 V ±30V 4000 pF @ 25 V - - TO-3P - 400W (Tc) -55°C ~ 150°C (TJ)
NTPF082N65S3F

NTPF082N65S3F

MOSFET N-CH 650V 40A TO220F

onsemi

644 -
NTPF082N65S3F

数据表

SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 82mOhm @ 20A, 10V Through Hole 5V @ 4mA 70 nC @ 10 V 650 V ±30V 3240 pF @ 400 V - - TO-220F-3 - 48W (Tc) -55°C ~ 150°C (TJ)
FCMT125N65S3

FCMT125N65S3

MOSFET N-CH 650V 24A 4PQFN

onsemi

455 -
FCMT125N65S3

数据表

SuperFET® III 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 125mOhm @ 12A, 10V Surface Mount 4.5V @ 590µA 49 nC @ 10 V 650 V ±30V 1920 pF @ 400 V - - 4-PQFN (8x8) - 181W (Tc) -55°C ~ 150°C (TJ)
R6025JNZC17

R6025JNZC17

MOSFET N-CH 600V 25A TO3PF

Rohm Semiconductor

300 -
R6025JNZC17

数据表

- TO-3P-3 Full Pack Bag Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 15V 182mOhm @ 12.5A, 15V Through Hole 7V @ 2.5mA 57 nC @ 15 V 600 V ±30V 1900 pF @ 100 V - - TO-3PF - 85W (Tc) 150°C (TJ)
FCP104N60

FCP104N60

MOSFET N-CH 600V 37A TO220-3

onsemi

215 -
FCP104N60

数据表

SuperFET® II TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 104mOhm @ 18.5A, 10V Through Hole 3.5V @ 250µA 82 nC @ 10 V 600 V ±20V 4165 pF @ 380 V - - TO-220-3 - 357W (Tc) -55°C ~ 150°C (TJ)
FCP104N60F

FCP104N60F

MOSFET N-CH 600V 37A TO220-3

onsemi

1,569 -
FCP104N60F

数据表

HiPerFET™, Polar™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 104mOhm @ 18.5A, 10V Through Hole 5V @ 250µA 145 nC @ 10 V 600 V ±20V 6130 pF @ 25 V - - TO-220-3 - 357W (Tc) -55°C ~ 150°C (TJ)
IXTH120N20X4

IXTH120N20X4

MOSFET

Littelfuse Inc.

264 -
IXTH120N20X4

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 9.5mOhm @ 60A, 10V Through Hole 4.5V @ 250µA 108 nC @ 10 V 200 V ±20V 6100 pF @ 25 V - - TO-247 (IXTH) - 417W (Tc) -55°C ~ 175°C (TJ)
STFW40N60M2

STFW40N60M2

MOSFET N-CH 600V 34A ISOWATT

STMicroelectronics

275 -
STFW40N60M2

数据表

MDmesh™ II Plus TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 88mOhm @ 17A, 10V Through Hole 4V @ 250µA 57 nC @ 10 V 600 V ±25V 2500 pF @ 100 V - - TO-3PF - 63W (Tc) -55°C ~ 150°C (TJ)
SIHB30N60ET1-GE3

SIHB30N60ET1-GE3

N-CHANNEL 600V

Vishay Siliconix

1,112 -
SIHB30N60ET1-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 125mOhm @ 15A, 10V Surface Mount 4V @ 250µA 130 nC @ 10 V 600 V ±30V 2600 pF @ 100 V - - TO-263 (D2PAK) - 250W (Tc) -55°C ~ 150°C (TJ)
SSM3K59CTB,L3F

SSM3K59CTB,L3F

MOSFET N-CH 40V 2A CST3B

Toshiba Semiconductor and Storage

6,702 -
SSM3K59CTB,L3F

数据表

U-MOSVII-H 3-SMD, No Lead Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 1.8V, 8V 215mOhm @ 1A, 8V Surface Mount 1.2V @ 1mA 1.1 nC @ 4.2 V 40 V ±12V 130 pF @ 10 V - - CST3B - 1W (Ta) 150°C (TJ)
NVA7002NT1G

NVA7002NT1G

SINGLE N-CHANNEL GATE ESD PROTEC

onsemi

6,817 -
NVA7002NT1G

数据表

- SC-75, SOT-416 Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 154mA (Tj) 2.5V, 4.5V 7Ohm @ 154mA, 4.5V Surface Mount 1.5V @ 100µA - 30 V ±10V 20 pF @ 5 V AEC-Q101 - SC-75, SOT-416 Automotive 300mW (Tj) -55°C ~ 150°C (TJ)
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