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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVXK2PR80WXT2MOSFET 4N-CH 1200V 31A APM32 onsemi |
2,267 | - |
|
数据表 |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | Silicon Carbide (SiC) | 1154pF @ 800V | 208W (Tc) | APM32 | -55°C ~ 175°C (TJ) | Through Hole | Automotive | AEC-Q101 |
|
|
NVXK2VR80WDT2MOSFET 6N-CH 1200V 20A APM32 onsemi |
2,337 | - |
|
数据表 |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | Silicon Carbide (SiC) | 1154pF @ 800V | 82W (Tc) | APM32 | -55°C ~ 175°C (TJ) | Through Hole | Automotive | AEC-Q101 |
|
|
NXH040F120MNF1PGMOSFET 4N-CH 1200V 30A 22PIM onsemi |
6,006 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | - | 1505pF @ 800V | 74W (Tj) | 22-PIM (33.8x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH010P90MNF1PGMOSFET 2N-CH 900V 154A onsemi |
3,091 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | - | 7007pF @ 450V | 328W (Tj) | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
NXH010P120MNF1PGMOSFET 2N-CH 1200V 114A onsemi |
5,990 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | - | 4707pF @ 800V | 250W (Tj) | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
NXH020P120MNF1PGMOSFET 2N-CH 1200V 51A onsemi |
2,676 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | - | 2420pF @ 800V | 119W (Tj) | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
NXH006P120M3F2PTHGMOSFET 2N-CH 1200V 191A 36PIM onsemi |
1 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 191A (Tc) | 8mOhm @ 100A, 18V | 4.4V @ 80mA | 622nC @ 20V | Silicon Carbide (SiC) | 11914pF @ 800V | 556W (Tc) | 36-PIM (56.7x62.8) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
NDC7002N_SB9G007MOSFET 2N-CH 50V 0.51A SSOT6 onsemi |
9,281 | - |
|
数据表 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 50V | 510mA | 2Ohm @ 510mA, 10V | 2.5V @ 250µA | 1nC @ 10V | Logic Level Gate | 20pF @ 25V | 700mW | SuperSOT™-6 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
NTJD4001NT1MOSFET 2N-CH 30V 0.25A SC88 onsemi |
9,950 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 250mA | 1.5Ohm @ 10mA, 4V | 1.5V @ 100µA | 1.3nC @ 5V | - | 33pF @ 5V | 272mW | SC-88/SC70-6/SOT-363 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
NTJD4001NT2GMOSFET 2N-CH 30V 0.25A SC88 onsemi |
4,865 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 250mA | 1.5Ohm @ 10mA, 4V | 1.5V @ 100µA | 1.3nC @ 5V | - | 33pF @ 5V | 272mW | SC-88/SC70-6/SOT-363 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
