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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVMFWD010N10MCLT1GMOSFET 2N-CH 100V 11.6A 8DFN onsemi |
9,000 | - |
|
数据表 |
- | 8-PowerTDFN | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel | 100V | 11.6A (Ta), 61A (Tc) | 10.4mOhm @ 17A, 10V | 3V @ 97µA | 26nC @ 10V | - | 1800pF @ 50V | 3.1W (Ta), 84W (Tc) | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
FDMS1D2N03DSDMOSFET onsemi |
52,964 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NVMFD040N10MCLT1GMOSFET 2N-CH 100V 6.1A 8DFN onsemi |
6,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | 100V | 6.1A (Ta), 21A (Tc) | 39mOhm @ 5A, 10V | 3V @ 26µA | 8.4nC @ 10V | - | 520pF @ 50V | 3.2W (Ta), 36W (Tc) | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
NXH020U90MNF2PTGMOSFET 2N-CH 900V 149A onsemi |
4 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 900V | 149A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | - | 7007pF @ 450V | 352W (Tj) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NVXK2VR40WXT2MOSFET 6N-CH 1200V 55A APM32 onsemi |
14 | - |
|
数据表 |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 55A (Tc) | 59mOhm @ 35A, 20V | 4.3V @ 10mA | 106nC @ 20V | Silicon Carbide (SiC) | 1789pF @ 800V | 319W (Tc) | APM32 | -55°C ~ 175°C (TJ) | Through Hole | Automotive | AEC-Q101 |
|
|
NVVR26A120M1WSBMOSFET 2N-CH 1200V AHPM15-CDE onsemi |
10 | - |
|
数据表 |
- | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | Silicon Carbide (SiC) | 31700pF @ 800V | 1kW (Tj) | AHPM15-CDE | -40°C ~ 175°C (TJ) | Through Hole | Automotive | AEC-Q101 |
|
|
NVVR26A120M1WSSMOSFET 2N-CH 1200V AHPM15-CDI onsemi |
9 | - |
|
数据表 |
- | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | - | 31700pF @ 800V | 1kW (Tj) | AHPM15-CDI | -40°C ~ 175°C (TJ) | Through Hole | Automotive | AEC-Q101 |
|
|
FAM65CR51DZ1MOSFET 2N-CH 650V 33A APMCD-B16 onsemi |
67 | - |
|
数据表 |
- | 12-SSIP Exposed Pad, Formed Leads | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel | 650V | 33A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | - | 4864pF @ 400V | 160W (Tc) | APMCD-B16 | -55°C ~ 150°C (TJ) | Through Hole | Automotive | AEC-Q101 |
|
|
NXH015P120M3F1PTGMOSFET 2N-CH 1200V 77A onsemi |
13 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 77A (Tc) | 20mOhm @ 60A, 18V | 4.4V @ 30mA | 211nC @ 18V | Silicon Carbide (SiC) | 4696pF @ 800V | 198W (Tj) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH008P120M3F1PGMOSFET 2N-CH 1200V 145A onsemi |
18 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 145A (Tc) | 10.9mOhm @ 120A, 18V | 4.4V @ 60mA | 419nC @ 18V | Silicon Carbide (SiC) | 8334pF @ 800V | 382W (Tj) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
