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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NXH011F120M3F2PTHGMOSFET 4N-CH 1200V 105A 34PIM onsemi |
13 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 105A (Tc) | 16mOhm @ 100A, 18V | 4.4V @ 60mA | 284nC @ 18V | Silicon Carbide (SiC) | 6211.6pF @ 800V | 244W (Tj) | 34-PIM (56.7x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH007F120M3F2PTHGMOSFET 4N-CH 1200V 149A 34PIM onsemi |
6 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 149A (Tc) | 10mOhm @ 120A, 18V | 4.4V @ 60mA | 407nC @ 18V | Silicon Carbide (SiC) | 9090pF @ 800V | 353W (Tj) | 34-PIM (56.7x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH008T120M3F2PTHGMOSFET 4N-CH 1200V 129A 29PIM onsemi |
18 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | 1200V (1.2kV) | 129A (Tc) | 11.5mOhm @ 100A, 18V | 4.4V @ 60mA | 454nC @ 20V | - | 9129pF @ 800V | 371W (Tj) | 29-PIM (56.7x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH004P120M3F2PNGMOSFET 2N-CH 1200V 338A 36PIM onsemi |
20 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 338A (Tc) | 5.5mOhm @ 200A, 18V | 4.4V @ 120mA | 876nC @ 20V | Silicon Carbide (SiC) | 16410pF @ 800V | 1.098W (Tc) | 36-PIM (56.7x62.8) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NVVR26A120M1WSTMOSFET 2N-CH 1200V AHPM15-CDA onsemi |
6 | - |
|
数据表 |
- | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | Silicon Carbide (SiC) | 31700pF @ 800V | 1kW (Tj) | AHPM15-CDA | -40°C ~ 175°C (TJ) | Through Hole | Automotive | AEC-Q101 |
|
|
NVXR22S90M2SPBMOSFET 6N-CH 900V 510A SSDC39 onsemi |
4 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 900V | 510A (Tj) | 2.7mOhm @ 510A, 18V | 4.3V @ 150mA | 1800nC @ 18V | - | 35000pF @ 400V | 900W (Tj) | SSDC39 | -40°C ~ 175°C (TJ) | Chassis Mount | Automotive | AEC-Q101 |
|
|
NVXR22S90M2SPCMOSFET 6N-CH 900V 510A SSDC39 onsemi |
3 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 900V | 510A (Tj) | 2.7mOhm @ 510A, 18V | 4.3V @ 150mA | 1800nC @ 18V | - | 35000pF @ 400V | 900W (Tj) | SSDC39 | -40°C ~ 175°C (TJ) | Chassis Mount | Automotive | AEC-Q101 |
|
|
NVXR17S90M2SPBMOSFET 6N-CH 900V 620A SSDC39 onsemi |
7 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 900V | 620A (Tj) | 2.1mOhm @ 620A, 18V | 4.3V @ 200mA | 2400nC @ 18V | - | 45000pF @ 400V | 1kW (Tj) | SSDC39 | -40°C ~ 175°C (TJ) | Chassis Mount | Automotive | AEC-Q101 |
|
|
NVXR17S90M2SPCMOSFET 6N-CH 900V 620A SSDC39 onsemi |
3 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 900V | 620A (Tj) | 2.1mOhm @ 620A, 18V | 4.3V @ 200mA | 2400nC @ 18V | - | 45000pF @ 400V | 1kW (Tj) | SSDC39 | -40°C ~ 175°C (TJ) | Chassis Mount | Automotive | AEC-Q101 |
|
NTZD3154NT5GMOSFET 2N-CH 20V 0.54A SOT563 onsemi |
314 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 540mA | 550mOhm @ 540mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | - | 150pF @ 16V | 250mW | SOT-563 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
