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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXH040P120MNF1PGMOSFET 2N-CH 1200V 30A onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | - | 1505pF @ 800V | 74W | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
NXH008P120M3F1PTGMOSFET 2N-CH 1200V 145A onsemi |
27 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 145A (Tc) | 10.9mOhm @ 120A, 18V | 4.4V @ 60mA | 419nC @ 18V | Silicon Carbide (SiC) | 8334pF @ 800V | 382W (Tj) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH010P120MNF1PTNGMOSFET 2N-CH 1200V 114A onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | - | 4707pF @ 800V | 250W (Tj) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH020F120MNF1PGMOSFET 4N-CH 1200V 51A 22PIM onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | - | 2420pF @ 800V | 119W (Tj) | 22-PIM (33.8x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH004P120M3F2PTNGMOSFET 2N-CH 1200V 338A 36PIM onsemi |
40 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 338A (Tj) | 5.5mOhm @ 200A, 18V | 4.4V @ 120mA | 876nC @ 20V | - | 16410pF @ 800V | 1.1kW (Tj) | 36-PIM (56.7x62.8) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NTK3142PT1H-ONMOSFET P-CH onsemi |
100,800 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
EFC4601-M-TR-ONMOSFET N-CH onsemi |
1,895,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SCH2822-TL-EPCH+SBD 2.5V DRIVE SERIES onsemi |
170,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SB808F-SPA-ONMOSFET N-CH onsemi |
35,003 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FDS6900AS-GMOSFET 2N-CH 30V 6.9A/8.2A 8SOIC onsemi |
3,346 | - |
|
数据表 |
PowerTrench®, SyncFET™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 6.9A, 8.2A | 27mOhm @ 6.9A, 10V | 3V @ 250µA, 3V @ 1mA | 15nC @ 10V | Logic Level Gate | 600pF @ 15V | 900mW (Ta) | 8-SOIC | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
