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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTTFD018N08LCMOSFET 2N-CH 80V 6A 12WQFN onsemi |
2,945 | - |
|
数据表 |
- | 12-PowerWQFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 80V | 6A (Ta), 26A (Tc) | 18mOhm @ 7.8A, 10V | 2.5V @ 44µA | 12.4nC @ 10V | - | 856pF @ 40V | 1.7W (Ta), 26W (Tc) | 12-WQFN (3.3x3.3) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
NTTFD021N08CMOSFET 2N-CH 80V 6A 12WQFN onsemi |
2,611 | - |
|
数据表 |
- | 12-PowerWQFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 80V | 6A (Ta), 24A (Tc) | 21mOhm @ 7.8A, 10V | 4V @ 44µA | 8.4nC @ 10V | - | 572pF @ 40V | 1.7W (Ta), 26W (Tc) | 12-WQFN (3.3x3.3) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
NTTFD022N10CMOSFET 2N-CH 100V 6A 12WQFN onsemi |
2,980 | - |
|
数据表 |
- | 12-PowerWQFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 6A (Ta), 24A (Tc) | 25mOhm @ 7.8A, 10V | 4V @ 44µA | 9nC @ 10V | - | 585pF @ 50V | 1.7W (Ta), 26W (Tc) | 12-WQFN (3.3x3.3) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
NVMFD5C446NWFT1GMOSFET 2N-CH 40V 24A 8DFN onsemi |
2,965 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 24A (Ta), 127A (Tc) | 2.9mOhm @ 30A, 10V | 3.5V @ 250µA | 38nC @ 10V | - | 2450pF @ 25V | 3.2W (Ta), 89W (Tc) | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
NXV08A170DB2MOSFET 2N-CH 80V 200A APM12-CBA onsemi |
238 | - |
|
数据表 |
- | 12-PowerDIP Module (1.118", 28.40mm) | Tray | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 80V | 200A (Tj) | 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V | 4V @ 250µA | 195nC @ 10V | - | 14000pF @ 40V | - | APM12-CBA | 175°C (TJ) | Through Hole | Automotive | AEC-Q100 |
|
|
NVXK2TR40WXTMOSFET 4N-CH 1200V 27A APM32 onsemi |
60 | - |
|
数据表 |
- | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | 27A (Tc) | 59mOhm @ 35A, 20V | 4.3V @ 10mA | 106nC @ 20V | Silicon Carbide (SiC) | 1789pF @ 800V | 319W (Tc) | APM32 | -55°C ~ 175°C (TJ) | Through Hole | Automotive | AEC-Q101 |
|
|
NXH030F120M3F1PTGMOSFET 4N-CH 1200V 38A 22PIM onsemi |
26 | - |
|
数据表 |
- | Module | Tray | Active | SiCFET (Silicon Carbide) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 38A (Tc) | 38.5mOhm @ 30A, 18V | 4.4V @ 15mA | 110nC @ 18V | Depletion Mode | 2246pF @ 800V | 100W (Tj) | 22-PIM (33.8x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH010P120M3F1PGMOSFET 2N-CH 1200V 105A onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 105A (Tc) | 14.5mOhm @ 90A, 18V | 4.4V @ 45mA | 314nC @ 18V | Silicon Carbide (SiC) | 6451pF @ 800V | 272W (Tj) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH010P120M3F1PTGMOSFET 2N-CH 1200V 105A onsemi |
27 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 105A (Tc) | 14.5mOhm @ 90A, 18V | 4.4V @ 45mA | 314nC @ 18V | Silicon Carbide (SiC) | 6451pF @ 800V | 272W (Tj) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH030P120M3F1PTGMOSFET 2N-CH 1200V 42A onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 42A (Tc) | 38.5mOhm @ 30A, 18V | 4.4V @ 15mA | 110nC @ 18V | Silicon Carbide (SiC) | 2271pF @ 800V | 100W (Tj) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
