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首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FET）、MOSFET 阵列

场效应晶体管（FET）、MOSFET 阵列

制造商	系列	封装/外壳	包装	产品状态	技术	配置	漏极到源极电压 (Vdss)	电流 - 连续漏极 (Id) @ 25°C	导通电阻 (Rds On)（最大值）@ Id, Vgs	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	FET 特性	输入电容 (Ciss)（最大值）@ Vds	功率 - 最大值	供应商设备封装	工作温度	安装类型	等级	认证
Advanced Linear Devices Inc. Alpha & Omega Semiconductor Inc. Analog Devices Inc./Maxim Integrated Analog Power Inc. Bruckewell Central Semiconductor Corp Comchip Technology Diodes Incorporated Diotec Semiconductor EMO Inc. EPC EPC Space, LLC Fairchild Semiconductor Flip Electronics GE Aerospace GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation HY Electronic (Cayman) Limited Infineon Technologies International Rectifier IXYS Linear Integrated Systems, Inc. Littelfuse Inc. Micro Commercial Co Microchip Technology Microsemi Corporation Monolithic Power Systems Inc. National Semiconductor Nexperia USA Inc. Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. Powerex Inc. Qorvo Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siliconix SMC Diode Solutions STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Unitrode Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	配置	漏极到源极电压 (Vdss)	电流 - 连续漏极 (Id) @ 25°C	导通电阻 (Rds On)（最大值）@ Id, Vgs	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	FET 特性	输入电容 (Ciss)（最大值）@ Vds	功率 - 最大值	供应商设备封装	工作温度	安装类型	等级	认证
FMM150-0075X2F MOSFET 2N-CH 75V 120A I4-PAC IXYS	7,765	-	询价单	数据表	HiPerFET™, TrenchT2™	ISOPLUSi5-PAK™	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	75V	120A	5.8mOhm @ 100A, 10V	4V @ 250µA	178nC @ 10V	-	10500pF @ 25V	170W	ISOPLUS i4-PAC™	-55°C ~ 175°C (TJ)	Through Hole	-	-
MSCSM120AM50CT1AG MOSFET 2N-CH 1200V 55A SP1F Microchip Technology	8,032	-	询价单	数据表	-	Module	Tube	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	-	1990pF @ 1000V	245W (Tc)	SP1F	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
MSCSM70AM10CT3AG MOSFET 2N-CH 700V 241A SP3F Microchip Technology	6,864	-	询价单	数据表	-	Module	Tube	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	-	9000pF @ 700V	690W (Tc)	SP3F	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
MSCSM170AM23CT1AG MOSFET 2N-CH 1700V 124A Microchip Technology	8,228	-	询价单	数据表	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	-	6600pF @ 1000V	602W (Tc)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
MSCSM170AM11CT3AG MOSFET 2N-CH 1700V 240A Microchip Technology	2,547	-	询价单	数据表	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	1700V (1.7kV)	240A (Tc)	11.3mOhm @ 120A, 20V	3.2V @ 10mA	712nC @ 20V	-	13200pF @ 1000V	1.14kW (Tc)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
MSCSM170DUM058AG MOSFET 2N-CH 1700V 353A Microchip Technology	1	-	询价单	数据表	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	-	19800pF @ 1000V	1642W (Tc)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
MSCSM170DUM039AG MOSFET 2N-CH 1700V 523A Microchip Technology	2,053	-	询价单	数据表	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	1700V (1.7kV)	523A (Tc)	5mOhm @ 270A, 20V	3.3V @ 22.5mA	1602nC @ 20V	-	29700pF @ 1000V	2400W (Tc)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
CAS300M12BM2 MOSFET 2N-CH 1200V 423A MODULE Wolfspeed, Inc.	1	-	询价单	数据表	Z-FET™	Module, Screw Terminals	Bulk	Not For New Designs	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	423A (Tc)	5.7mOhm @ 300A, 20V	2.3V @ 15mA (Typ)	1025nC @ 20V	-	19500pF @ 800V	1660W	Module	150°C (TJ)	Chassis Mount	-	-
MSCSM120DUM027AG MOSFET 2N-CH 1200V 733A Microchip Technology	1	-	询价单	数据表	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 9mA	2088nC @ 20V	-	27000pF @ 1000V	2968W (Tc)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
MSCSM120AM02CT6LIAG MOSFET 2N-CH 1200V 947A SP6C LI Microchip Technology	1	-	询价单	数据表	-	Module	Tube	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	1200V (1.2kV)	947A (Tc)	2.6mOhm @ 480A, 20V	2.8V @ 12mA	2784nC @ 20V	-	36240pF @ 1000V	3.75kW (Tc)	SP6C LI	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
CAB760M12HM3R MOSFET 2N-CH 1200V 1.015KA MODUL Wolfspeed, Inc.	8,623	-	询价单	数据表	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	1.015kA (Tc)	1.73mOhm @ 760A, 15V	3.6V @ 280mA	2724nC @ 15V	-	79400pF @ 800V	-	Module	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
SSM6N35FE,LM MOSFET 2N-CH 20V 0.18A ES6 Toshiba Semiconductor and Storage	2,959	-	询价单	数据表	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	20V	180mA	3Ohm @ 50mA, 4V	1V @ 1mA	-	Logic Level Gate	9.5pF @ 3V	150mW	ES6	150°C (TJ)	Surface Mount	-	-
PJT7812_R1_00001 MOSFET 2N-CH 30V 0.5A SOT363 Panjit International Inc.	2,924	-	询价单	数据表	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Not For New Designs	MOSFET (Metal Oxide)	2 N-Channel (Dual)	30V	500mA (Ta)	1.2Ohm @ 500mA, 4.5V	1.1V @ 250µA	0.87nC @ 4.5V	-	34pF @ 15V	350mW (Ta)	SOT-363	-55°C ~ 150°C (TJ)	Surface Mount	-	-
PJX8812_R1_00001 MOSFET 2N-CH 30V 0.35A SOT563 Panjit International Inc.	3,742	-	询价单	数据表	-	SOT-563, SOT-666	Tape & Reel (TR)	Not For New Designs	MOSFET (Metal Oxide)	2 N-Channel (Dual)	30V	350mA (Ta)	1.2Ohm @ 350mA, 4.5V	1.1V @ 250µA	0.87nC @ 4.5V	-	34pF @ 15V	300mW (Ta)	SOT-563	-55°C ~ 150°C (TJ)	Surface Mount	-	-
SSM6N62TU,LXHF MOSFET 2N-CH 20V 0.8A UF6 Toshiba Semiconductor and Storage	7,941	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	20V	800mA (Ta)	85mOhm @ 800mA, 4.5V	1V @ 1mA	2nC @ 4.5V	Logic Level Gate, 1.2V Drive	177pF @ 10V	500mW (Ta)	UF6	150°C	Surface Mount	Automotive	AEC-Q101
US6M2GTR MOSFET N/P-CH 30V/20V 1.5A TUMT6 Rohm Semiconductor	2,477	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel	30V, 20V	1.5A, 1A	240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V	1.5V @ 1mA, 2V @ 1mA	2.2nC @ 4.5V, 2.1nC @ 4.5V	-	80pF @ 10V, 150pF @ 10V	1W	TUMT6	150°C	Surface Mount	-	-
AOD609G MOSFET N/P-CH 40V 12A TO252-4L Alpha & Omega Semiconductor Inc.	2,564	-	询价单	数据表	-	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel Complementary	40V	12A (Tc)	30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V	3V @ 250µA	13nC @ 10V, 21nC @ 10V	-	545pF @ 20V, 890pF @ 20V	2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)	TO-252-4L	-55°C ~ 175°C (TJ)	Surface Mount	-	-
SSM6N951L,EFF MOSFET 2N-CH 12V 8A 6TCSPA Toshiba Semiconductor and Storage	3,387	-	询价单	数据表	-	6-SMD, No Lead	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	12V	8A	5.1mOhm @ 8A, 4.5V	-	-	-	-	-	6-TCSPA (2.14x1.67)	-	Surface Mount	-	-
ZXMN2AMCTA MOSFET 2N-CH 20V 3.7A 8DFN Diodes Incorporated	4	-	询价单	数据表	-	8-WDFN Exposed Pad	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	20V	3.7A (Ta)	120mOhm @ 4A, 4.5V	3V @ 250µA	3.1nC @ 4.5V	-	299pF @ 15V	1.7W	DFN3020B-8	-55°C ~ 150°C (TJ)	Surface Mount	Automotive	AEC-Q101
SIZ200DT-T1-GE3 MOSFET 2N-CH 30V 22A 8POWERPAIR Vishay Siliconix	7,247	-	询价单	数据表	TrenchFET® Gen IV	8-PowerWDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	30V	22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)	5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V	2.4V @ 250µA	28nC @ 10V, 30nC @ 10V	-	1510pF @ 15V, 1600pF @ 15V	4.3W (Ta), 33W (Tc)	8-PowerPair® (3.3x3.3)	-55°C ~ 150°C (TJ)	Surface Mount	-	-

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