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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
WAB300M12BM3

WAB300M12BM3

MOSFET 2N-CH 1200V 382A MODULE

Wolfspeed, Inc.

8,403 -
WAB300M12BM3

数据表

- Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 382A (Tc) 5.2mOhm @ 300A, 15V 3.6V @ 92mA 908nC @ 15V - 24500pF @ 1000V - Module -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM70AM025CD3AG

MSCSM70AM025CD3AG

SIC 700V 538A D3

Microchip Technology

4 -
MSCSM70AM025CD3AG

数据表

- Module Box Active Silicon Carbide (SiC) - 700V 538A (Tc) - - - - - - D3 - Chassis Mount - -
MSQ30C01D

MSQ30C01D

MOSFET 30V 5.3A 8SOIC

Bruckewell

930 -
MSQ30C01D

数据表

Trench 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active - - 30V 5.3A (Ta), 7A (Ta) 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V 2.5V @ 250µA - - - - 8-SOIC -55°C ~ 150°C (Tc) Surface Mount - -
QH8JC5TCR

QH8JC5TCR

MOSFET 2P-CH 60V 3.5A TSMT8

Rohm Semiconductor

6,325 -
QH8JC5TCR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 60V 3.5A (Ta) 91mOhm @ 3.5A, 10V 2.5V @ 1mA 17.3nC @ 10V - 850pF @ 30V 1.1W (Ta) TSMT8 150°C (TJ) Surface Mount - -
SI7212DN-T1-GE3

SI7212DN-T1-GE3

MOSFET 2N-CH 30V 4.9A PPAK 1212

Vishay Siliconix

4 -
SI7212DN-T1-GE3

数据表

- PowerPAK® 1212-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 4.9A 36mOhm @ 6.8A, 10V 1.6V @ 250µA 11nC @ 4.5V Logic Level Gate - 1.3W PowerPAK® 1212-8 Dual -55°C ~ 150°C (TJ) Surface Mount - -
DMGD7N45SSD-13

DMGD7N45SSD-13

MOSFET 2N-CH 450V 0.5A 8SO

Diodes Incorporated

7 -
DMGD7N45SSD-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 450V 500mA (Ta) 4Ohm @ 400mA, 10V 4.5V @ 1mA 6.9nC @ 10V - 256pF @ 25V 1.64W 8-SO -55°C ~ 150°C (TJ) Surface Mount Automotive AEC-Q101
ZXMC6A09DN8TA

ZXMC6A09DN8TA

MOSFET N/P-CH 60V 3.9A/3.7A 8SO

Diodes Incorporated

7 -
ZXMC6A09DN8TA

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel 60V 3.9A, 3.7A 45mOhm @ 8.2A, 10V 1V @ 250µA (Min) 24.2nC @ 10V Logic Level Gate 1407pF @ 40V, 1580pF @ 40V 1.8W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
ALD1116SAL

ALD1116SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

4,416 -
ALD1116SAL

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair 10.6V - 500Ohm @ 5V 1V @ 1µA - - 3pF @ 5V 500mW 8-SOIC 0°C ~ 70°C (TJ) Surface Mount - -
M1F45M12W2-1LA

M1F45M12W2-1LA

MOSFET 4N-CH 1200V ACEPACK DMT

STMicroelectronics

9,108 -
M1F45M12W2-1LA

数据表

ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 4 N-Channel 1200V (1.2kV) 30A (Tc) 64mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V - 2086pF @ 800V - ACEPACK DMT-32 -40°C ~ 175°C (TJ) Through Hole - -
FF4MR12W2M1HB11BPSA1

FF4MR12W2M1HB11BPSA1

MOSFET 2N-CH 1200V 170A MODULE

Infineon Technologies

6,293 -
FF4MR12W2M1HB11BPSA1

数据表

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 170A (Tj) 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V - 17600pF @ 800V - Module -40°C ~ 175°C (TJ) Chassis Mount - -
FS02MR12A8MA2BBPSA1

FS02MR12A8MA2BBPSA1

MOSFET 6N-CH 1200V 390A

Infineon Technologies

2,141 -
FS02MR12A8MA2BBPSA1

数据表

HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel 1200V (1.2kV) 390A (Tj) 1.9mOhm @ 390A, 18V 4.55V @ 160mA 1.19µC @ 18V Silicon Carbide (SiC) 34500pF @ 750V - - -40°C ~ 175°C (TJ) Chassis Mount - -
2N7002KDW-AU_R1_000A1

2N7002KDW-AU_R1_000A1

MOSFET 2N-CH 60V 0.25A SOT363

Panjit International Inc.

5,828 -
2N7002KDW-AU_R1_000A1

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 250mA (Ta) 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.8nC @ 5V - 35pF @ 25V 350mW (Ta) SOT-363 -55°C ~ 150°C (TJ) Surface Mount Automotive AEC-Q101
SSM6N7002BFE,LM

SSM6N7002BFE,LM

MOSFET 2N-CH 60V 0.2A ES6

Toshiba Semiconductor and Storage

4,716 -
SSM6N7002BFE,LM

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 200mA 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - Logic Level Gate 17pF @ 25V 150mW ES6 150°C (TJ) Surface Mount - -
SIL2300A-TP

SIL2300A-TP

MOSFET 2N-CH 20V 7A SOT23-6L

Micro Commercial Co

4,098 -
SIL2300A-TP

数据表

- SOT-23-6 Tape & Reel (TR) Active - 2 N-Channel (Dual) Common Drain 20V 7A 18mOhm @ 5A, 4.5V 1V @ 250µA 9.2nC @ 4.5V - 900pF @ 10V 1.5W SOT-23-6L -55°C ~ 150°C (TJ) Surface Mount - -
SSM6P69NU,LF

SSM6P69NU,LF

MOSFET 2P-CH 20V 4A 6DFN

Toshiba Semiconductor and Storage

2 -
SSM6P69NU,LF

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 4A (Ta) 45mOhm @ 3.5A, 10V 1.2V @ 1mA 6.74nC @ 4.5V Logic Level Gate, 1.8V Drive 480pF @ 10V 1W (Ta) 6-µDFN (2x2) 150°C Surface Mount - -
BSS8402DWQ-7

BSS8402DWQ-7

MOSFET N/P-CH 60V/50V SOT363

Diodes Incorporated

4,342 -
BSS8402DWQ-7

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel 60V, 50V 115mA, 130mA 13.5Ohm @ 500mA, 10V 2.5V @ 250µA - Logic Level Gate 50pF @ 25V, 45pF @ 25V 200mW SOT-363 -55°C ~ 150°C (TJ) Surface Mount - -
DMC4029SK4-13

DMC4029SK4-13

MOSFET N/P-CH 40V 8.3A TO252-4L

Diodes Incorporated

7,415 -
DMC4029SK4-13

数据表

- TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary 40V 8.3A 24mOhm @ 6A, 10V 3V @ 250µA 19.1nC @ 20V - 1060pF @ 20V 1.5W TO-252-4L -55°C ~ 150°C (TJ) Surface Mount - -
UT6ME5TCR

UT6ME5TCR

MOSFET N/P-CH 100V 2A HUML2020L8

Rohm Semiconductor

6,048 -
UT6ME5TCR

数据表

- 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel 100V 2A (Ta), 1A (Ta) 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V 2.5V @ 1mA 2.8nC @ 10V, 6.7nC @ 10V - 90pF @ 50V 2W (Ta) HUML2020L8 150°C (TJ) Surface Mount - -
IRLHS6276TRPBF

IRLHS6276TRPBF

MOSFET 2N-CH 20V 4.5A PQFN

Infineon Technologies

5,999 -
IRLHS6276TRPBF

数据表

HEXFET® 6-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 4.5A 45mOhm @ 3.4A, 4.5V 1.1V @ 10µA 3.1nC @ 4.5V Logic Level Gate 310pF @ 10V 1.5W 6-PQFN Dual (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
TSM250NB06DCR RLG

TSM250NB06DCR RLG

MOSFET 2N-CH 60V 7A 8PDFN

Taiwan Semiconductor Corporation

9,848 -
TSM250NB06DCR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 7A (Ta), 30A (Tc) 25mOhm @ 7A, 10V 4V @ 250µA 22nC @ 10V - 1461pF @ 30V 2W (Ta), 48W (Tc) 8-PDFN (5x6) -55°C ~ 150°C (TJ) Surface Mount - -
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