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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSCSM70TAM19CT3AGMOSFET 6N-CH 700V 124A SP3F |
1 | - |
|
数据表 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | - | 4500pF @ 700V | 365W (Tc) | SP3F | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
MSCSM70DUM017AGMOSFET 2N-CH 700V 1021A |
5,247 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 700V | 1021A (Tc) | 2.1mOhm @ 360A, 20V | 2.4V @ 36mA | 1935nC @ 20V | - | 40500pF @ 700V | 2750W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
BSM600D12P4G103MOSFET 2N-CH 1200V 567A MODULE |
2,691 | - |
|
数据表 |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel | 1200V (1.2kV) | 567A (Tc) | - | 4.8V @ 291.2mA | - | - | 59000pF @ 10V | 1.78kW (Tc) | Module | 175°C (TJ) | Chassis Mount | - | - |
|
|
MSCSM170AM058CT6LIAGMOSFET 2N-CH 1700V 353A |
3,712 | - |
|
数据表 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | - | 19800pF @ 1000V | 1.642kW (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
CAB650M17HM3MOSFET 2N-CH 1700V 916A MODULE |
1 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1700V (1.7kV) | 916A (Tc) | 1.86mOhm @ 650A, 15V | 3.6V @ 305mA | 2988nC @ 15V | - | 97300pF @ 1200V | - | Module | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
FF2600UXTR33T2M1BPSA1MOSFET 2N-CH 3300V AG-XHP2K33 |
8,488 | - |
|
数据表 |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 3300V (3.3kV) | 720A (Tc) | 3.1mOhm @ 750A, 15V | 5.55V @ 675mA | 3750nC @ 15V | Silicon Carbide (SiC) | 152000pF @ 1.8kV | - | AG-XHP2K33 | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
SSM6N68NU,LFMOSFET 2N-CH 30V 4A 6DFN |
16 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 4A (Ta) | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | 129pF @ 15V | 2W (Ta) | 6-µDFN (2x2) | 150°C | Surface Mount | - | - |
|
DMN2016LFG-7MOSFET 2N-CH 20V 5.2A 8DFN |
5,306 | - |
|
数据表 |
- | 8-PowerUDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Common Drain | 20V | 5.2A | 18mOhm @ 6A, 4.5V | 1.1V @ 250µA | 16nC @ 4.5V | Logic Level Gate | 1472pF @ 10V | 770mW | U-DFN3030-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
ZXMN3A06DN8TAMOSFET 2N-CH 30V 4.9A 8SO |
13 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 4.9A | 35mOhm @ 9A, 10V | 1V @ 250µA (Min) | 17.5nC @ 10V | Logic Level Gate | 796pF @ 25V | 1.8W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BUK9V13-40HXMOSFET 2N-CH 40V 42A LFPAK56D |
6 | - |
|
数据表 |
TrenchMOS™ | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 40V | 42A (Ta) | 13.6mOhm @ 10A, 10V | 2.2V @ 1mA | 19.4nC @ 10V | Logic Level Gate | 1160pF @ 25V | 46W (Ta) | LFPAK56D | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
STS1DNC45MOSFET 2N-CH 450V 0.4A 8SOIC |
7,067 | - |
|
数据表 |
SuperMESH™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 450V | 400mA | 4.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 10nC @ 10V | - | 160pF @ 25V | 1.6W | 8-SOIC | 150°C (TJ) | Surface Mount | - | - |
|
ALD110900SALMOSFET 2N-CH 10.6V 8SOIC |
9,418 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
ALD1116PALMOSFET 2N-CH 10.6V 8PDIP |
7,888 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | - | 3pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD1117PALMOSFET 2P-CH 10.6V 8PDIP |
9,185 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | 10.6V | - | 1800Ohm @ 5V | 1.2V @ 1µA | - | - | 3pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD1102SALMOSFET 2P-CH 10.6V 8SOIC |
12 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 10pF @ 5V | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
ALD210800SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
19 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | Logic Level Gate | 15pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD1102PALMOSFET 2P-CH 10.6V 8PDIP |
22 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 10pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD110800ASCLMOSFET 4N-CH 10.6V 16SOIC |
23 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD1101ASALMOSFET 2N-CH 10.6V 8SOIC |
4,264 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | - | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
ALD110800APCLMOSFET 4N-CH 10.6V 16PDIP |
4 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
