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桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
GSIB660N-M3/45

GSIB660N-M3/45

BRIDGE RECT 1P 600V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division

6,134 -
GSIB660N-M3/45

数据表

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 6 A 950 mV @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GSIB-5S
GSIB680N-M3/45

GSIB680N-M3/45

BRIDGE RECT 1P 800V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division

7,237 -
GSIB680N-M3/45

数据表

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 6 A 950 mV @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole GSIB-5S
BU1006A-E3/45

BU1006A-E3/45

BRIDGE RECT 1PHASE 600V 3A BU

Vishay General Semiconductor - Diodes Division

5,339 -
BU1006A-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole isoCINK+™ BU
BU1006A-E3/51

BU1006A-E3/51

BRIDGE RECT 1PHASE 600V 3A BU

Vishay General Semiconductor - Diodes Division

4,373 -
BU1006A-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole isoCINK+™ BU
BU1006-E3/51

BU1006-E3/51

BRIDGE RECT 1PHASE 600V 3.2A BU

Vishay General Semiconductor - Diodes Division

3,847 -
BU1006-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole isoCINK+™ BU
BU1008A-E3/45

BU1008A-E3/45

BRIDGE RECT 1PHASE 800V 3A BU

Vishay General Semiconductor - Diodes Division

4,118 -
BU1008A-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole isoCINK+™ BU
BU1008A-E3/51

BU1008A-E3/51

BRIDGE RECT 1PHASE 800V 3A BU

Vishay General Semiconductor - Diodes Division

7,047 -
BU1008A-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole isoCINK+™ BU
BU1008-E3/45

BU1008-E3/45

BRIDGE RECT 1PHASE 800V 3.2A BU

Vishay General Semiconductor - Diodes Division

4,881 -
BU1008-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 3.2 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole isoCINK+™ BU
BU1010A-E3/45

BU1010A-E3/45

BRIDGE RECT 1PHASE 1KV 3A BU

Vishay General Semiconductor - Diodes Division

9,265 -
BU1010A-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole isoCINK+™ BU
BU1010-E3/45

BU1010-E3/45

BRIDGE RECT 1PHASE 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division

5,684 -
BU1010-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole isoCINK+™ BU
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