| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管类型 | 技术 | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 电流 - 反向漏电 @ Vr | 工作温度 | 等级 | 电压 - 反向峰值(最大值) | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BU1206-M3/51BRIDGE RECT 1PHASE 600V 12A BU Vishay General Semiconductor - Diodes Division |
4,487 | - |
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数据表 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 12 A | 1.05 V @ 6 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | 600 V | - | Through Hole | isoCINK+™ BU |
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BU1208-M3/51BRIDGE RECT 1PHASE 800V 12A BU Vishay General Semiconductor - Diodes Division |
7,750 | - |
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数据表 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 12 A | 1.05 V @ 6 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | 800 V | - | Through Hole | isoCINK+™ BU |
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BU1210-M3/51BRIDGE RECT 1PHASE 1KV 12A BU Vishay General Semiconductor - Diodes Division |
7,289 | - |
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数据表 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 12 A | 1.05 V @ 6 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | 1 kV | - | Through Hole | isoCINK+™ BU |
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BU1008-M3/45BRIDGE RECT 1PHASE 800V 10A BU Vishay General Semiconductor - Diodes Division |
3,194 | - |
|
数据表 |
- | 4-SIP, BU | Tube | Active | Single Phase | Standard | 10 A | 1.05 V @ 5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | 800 V | - | Through Hole | isoCINK+™ BU |
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BU1010A-M3/45BRIDGE RECT 1PHASE 1KV 10A BU Vishay General Semiconductor - Diodes Division |
8,107 | - |
|
数据表 |
- | 4-SIP, BU | Tube | Active | Single Phase | Standard | 10 A | 1.1 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | 1 kV | - | Through Hole | isoCINK+™ BU |
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BU1010-M3/45BRIDGE RECT 1PHASE 1KV 10A BU Vishay General Semiconductor - Diodes Division |
4,952 | - |
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数据表 |
- | 4-SIP, BU | Tube | Active | Single Phase | Standard | 10 A | 1.05 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | 1 kV | - | Through Hole | isoCINK+™ BU |
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BU1206-M3/45BRIDGE RECT 1PHASE 600V 12A BU Vishay General Semiconductor - Diodes Division |
6,439 | - |
|
数据表 |
- | 4-SIP, BU | Tube | Active | Single Phase | Standard | 12 A | 1.05 V @ 6 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | 600 V | - | Through Hole | isoCINK+™ BU |
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BU1208-M3/45BRIDGE RECT 1PHASE 800V 12A BU Vishay General Semiconductor - Diodes Division |
7,341 | - |
|
数据表 |
- | 4-SIP, BU | Tube | Active | Single Phase | Standard | 12 A | 1.05 V @ 6 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | 800 V | - | Through Hole | isoCINK+™ BU |
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BU1210-M3/45BRIDGE RECT 1PHASE 1KV 12A BU Vishay General Semiconductor - Diodes Division |
7,389 | - |
|
数据表 |
- | 4-SIP, BU | Tube | Active | Single Phase | Standard | 12 A | 1.05 V @ 6 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | 1 kV | - | Through Hole | isoCINK+™ BU |
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GSIB15A20N-M3/45BRIDGE RECT 1P 200V 15A GSIB-5S Vishay General Semiconductor - Diodes Division |
4,921 | - |
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数据表 |
- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 15 A | 1 V @ 7.5 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | - | 200 V | - | Through Hole | GSIB-5S |