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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-30WQ04FNHM3

VS-30WQ04FNHM3

DIODE SCHOTTKY 40V 3.5A TO252

Vishay General Semiconductor - Diodes Division

6,624 -
VS-30WQ04FNHM3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Schottky 40 V 530 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V 189pF @ 5V, 1MHz 3.5A Automotive AEC-Q101 Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-30WQ04FNTRHM3

VS-30WQ04FNTRHM3

DIODE SCHOTTKY 40V 3.5A DPAK

Vishay General Semiconductor - Diodes Division

7,178 -
VS-30WQ04FNTRHM3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 40 V 530 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V 189pF @ 5V, 1MHz 3.5A Automotive AEC-Q101 Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-30WQ04FNTRLHM3

VS-30WQ04FNTRLHM3

DIODE SCHOTTKY 40V 3.5A DPAK

Vishay General Semiconductor - Diodes Division

6,017 -
VS-30WQ04FNTRLHM3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 40 V 530 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V 189pF @ 5V, 1MHz 3.5A Automotive AEC-Q101 Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-30WQ04FNTRRHM3

VS-30WQ04FNTRRHM3

DIODE SCHOTTKY 40V 3.5A DPAK

Vishay General Semiconductor - Diodes Division

6,554 -
VS-30WQ04FNTRRHM3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 40 V 530 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V 189pF @ 5V, 1MHz 3.5A Automotive AEC-Q101 Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
RBQ10RSM10BTFTL1

RBQ10RSM10BTFTL1

100V, 10A, TO-277GE, LOW IR SBD

Rohm Semiconductor

4,719 -
RBQ10RSM10BTFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 700 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 100 V - 10A Automotive AEC-Q101 Surface Mount TO-277A 150°C
FMC-G28S

FMC-G28S

DIODE GEN PURP 800V 3A TO220F-2L

Sanken Electric USA Inc.

9,931 -
FMC-G28S

数据表

- TO-220-2 Full Pack Tube Obsolete Standard 800 V 3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 100 µA @ 800 V - 3A - - Through Hole TO-220F-2L -40°C ~ 150°C
RHRP860

RHRP860

DIODE GEN PURP 600V 8A TO220-2L

onsemi

9,501 -
RHRP860

数据表

- TO-220-2 Tube Obsolete Standard 600 V 2.1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 100 µA @ 600 V - 8A - - Through Hole TO-220-2L -65°C ~ 175°C
V30K202HM3/I

V30K202HM3/I

DIODE SCHOTTKY 200V 3.4A FLATPAK

Vishay General Semiconductor - Diodes Division

7,711 -
V30K202HM3/I

数据表

- 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key Schottky 200 V 1.04 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 200 V 1250pF @ 4V, 1MHz 3.4A Automotive AEC-Q101 Surface Mount FlatPAK (5x6) -40°C ~ 165°C
V30K170HM3/I

V30K170HM3/I

DIODE SCHOTTKY 170V 3.4A FLATPAK

Vishay General Semiconductor - Diodes Division

8,054 -
V30K170HM3/I

数据表

- 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key Schottky 170 V 1.04 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 170 V 1250pF @ 4V, 1MHz 3.4A Automotive AEC-Q101 Surface Mount FlatPAK (5x6) -40°C ~ 165°C
VS-30WQ06FNTRHM3

VS-30WQ06FNTRHM3

DIODE SCHOTTKY 60V 3.5A DPAK

Vishay General Semiconductor - Diodes Division

7,136 -
VS-30WQ06FNTRHM3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 60 V 610 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 60 V 145pF @ 5V, 1MHz 3.5A Automotive AEC-Q101 Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
RB218RSM10STL1

RB218RSM10STL1

100V 20A, TO-277A, ULTRA LOW I

Rohm Semiconductor

4,000 -
RB218RSM10STL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 880 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 5.2 µA @ 100 V - 20A - - Surface Mount TO-277A 175°C
RB208RSM10STL1

RB208RSM10STL1

100V 15A, TO-277A, ULTRA LOW SUB

Rohm Semiconductor

4,000 -
RB208RSM10STL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 850 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 5.2 µA @ 100 V - 15A - - Surface Mount TO-277A 175°C
ESW6006

ESW6006

DIODE GEN PURP 600V 60A TO247

Diotec Semiconductor

444 -
ESW6006

数据表

- TO-247-2 Tube Active Standard 600 V 1.8 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 50 µA @ 600 V - 60A - - Through Hole TO-247 -50°C ~ 175°C
1N914UR/TR

1N914UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

104 -
1N914UR/TR

数据表

- DO-213AA Tape & Reel (TR) Active Standard 75 V 1.2 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA - - Surface Mount DO-213AA -65°C ~ 175°C
P2500W

P2500W

DIODE AVALANCHE 1600V 25A P600

Diotec Semiconductor

266 -
P2500W

数据表

- P600, Axial Cut Tape (CT) Active Avalanche 1600 V 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1600 V - 25A - - Through Hole P-600 -50°C ~ 175°C
VS-10ETS10STRR-M3

VS-10ETS10STRR-M3

DIODE GEN PURP 1KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

7,970 -
VS-10ETS10STRR-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1000 V 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1000 V - 10A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-10ETF12STRL-M3

VS-10ETF12STRL-M3

DIODE GEN PURP 1.2KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

6,548 -
VS-10ETF12STRL-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 1.33 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 310 ns 100 µA @ 1200 V - 10A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VB20150SG-E3/8W

VB20150SG-E3/8W

DIODE SCHOTTKY 150V 20A TO263AB

Vishay General Semiconductor - Diodes Division

5,825 -
VB20150SG-E3/8W

数据表

TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 150 V 1.6 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 150 V - 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
P2500T

P2500T

DIODE AVALANCHE 1300V 25A P600

Diotec Semiconductor

936 -
P2500T

数据表

- P600, Axial Cut Tape (CT) Active Avalanche 1300 V 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1300 V - 25A - - Through Hole P-600 -50°C ~ 175°C
TRS4V65H,LQ

TRS4V65H,LQ

G3 SIC-SBD 650V 4A DFN8X8

Toshiba Semiconductor and Storage

4,648 -
TRS4V65H,LQ

数据表

- 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.34 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz 4A - - Surface Mount 4-DFN-EP (8x8) 175°C
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