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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
NRVB2045EMFST3G

NRVB2045EMFST3G

DIODE SCHOTTKY 45V 20A 5DFN

onsemi

4,722 -
NRVB2045EMFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 45 V 640 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 400 µA @ 45 V - 20A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 150°C
VS-8ETH06STRLHM3

VS-8ETH06STRLHM3

DIODE GEN PURP 600V 8A TO263

Vishay General Semiconductor - Diodes Division

2,277 -
VS-8ETH06STRLHM3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 2.4 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 22 ns 50 µA @ 600 V - 8A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
CDBHA30100LR-HF

CDBHA30100LR-HF

DIODE SCHOTTKY 100V 30A TO-277B

Comchip Technology

4,134 -
CDBHA30100LR-HF

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 770 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 1200pF @ 4V, 1MHz 30A - - Surface Mount TO-277B -55°C ~ 150°C
VS-8ETH06STRRHM3

VS-8ETH06STRRHM3

DIODE GEN PURP 600V 8A TO263

Vishay General Semiconductor - Diodes Division

7,831 -
VS-8ETH06STRRHM3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 2.4 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 22 ns 50 µA @ 600 V - 8A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
SFS1608G

SFS1608G

DIODE GEN PURP 600V 16A TO263AB

Taiwan Semiconductor Corporation

1,595 -
SFS1608G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz 16A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
VS-ETU1506STRLHM3

VS-ETU1506STRLHM3

DIODE GEN PURP 600V 15A TO263

Vishay General Semiconductor - Diodes Division

6,324 -
VS-ETU1506STRLHM3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 15 µA @ 600 V - 15A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
SFS1608GH

SFS1608GH

DIODE GEN PURP 600V 16A TO263AB

Taiwan Semiconductor Corporation

1,580 -
SFS1608GH

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz 16A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
VS-ETU1506STRRHM3

VS-ETU1506STRRHM3

DIODE GEN PURP 600V 15A TO263

Vishay General Semiconductor - Diodes Division

6,127 -
VS-ETU1506STRRHM3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 15 µA @ 600 V - 15A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
VS-10ETF06THM3

VS-10ETF06THM3

DIODE GEN PURP 600V 10A TO220AC

Vishay General Semiconductor - Diodes Division

407 -
VS-10ETF06THM3

数据表

- TO-220-2 Tube Active Standard 600 V 1.2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 100 µA @ 600 V - 10A Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 150°C
SFAF1606GH

SFAF1606GH

DIODE GEN PURP 400V 16A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
SFAF1606GH

数据表

- TO-220-2 Full Pack Tube Active Standard 400 V 1.3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 100pF @ 4V, 1MHz 16A Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
BSDH06G65E2

BSDH06G65E2

DIODE SCHOT SIC 650V 6A TO220-2

Bourns Inc.

3,000 -
BSDH06G65E2

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 201pF @ 1V, 1MHz 6A - - Through Hole TO-220-2 -55°C ~ 175°C
SFAF2008G

SFAF2008G

DIODE GEN PURP 600V 20A ITO220AC

Taiwan Semiconductor Corporation

895 -
SFAF2008G

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 1.7 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 150pF @ 4V, 1MHz 20A - - Through Hole ITO-220AC -55°C ~ 150°C
PSDP15120S1_T0_00001

PSDP15120S1_T0_00001

TO-220AC, FAST

Panjit International Inc.

1,960 -
PSDP15120S1_T0_00001

数据表

- TO-220-2 Tube Active Standard 1200 V 3.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 100 µA @ 1200 V - 15A - - Through Hole TO-220AC -55°C ~ 150°C
YQ8RSM10SDTFTL1

YQ8RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 8A

Rohm Semiconductor

3,766 -
YQ8RSM10SDTFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 670 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 100 V - 8A Automotive AEC-Q101 Surface Mount TO-277A 175°C
RB078BM10SFNSTL

RB078BM10SFNSTL

100V 5A, TO-252, ULTRA LOW IR SB

Rohm Semiconductor

2,486 -
RB078BM10SFNSTL

数据表

- 2-PLCC Tape & Reel (TR) Active Schottky 100 V 740 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 6.4 µA @ 100 V - 5A - - Surface Mount 2-SMD 175°C
YQ20BGE10SDTL

YQ20BGE10SDTL

TRENCH MOS STRUCTURE, 100V, 20A,

Rohm Semiconductor

2,399 -
YQ20BGE10SDTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 100 V 860 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 100 V - 20A - - Surface Mount TO-252GE 150°C
RFN10RSM2STFTL1

RFN10RSM2STFTL1

200V 10A 15NS, TO-277A, ULTRA FA

Rohm Semiconductor

3,990 -
RFN10RSM2STFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 200 V 960 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 200 V - 10A Automotive AEC-Q101 Surface Mount TO-277A 175°C
ACDBA1100-HF

ACDBA1100-HF

DIODE SCHOTTKY 100V 1A DO214AC

Comchip Technology

1,882 -
ACDBA1100-HF

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Schottky 100 V 850 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 100 V 30pF @ 4V, 1MHz 1A Automotive AEC-Q101 Surface Mount DO-214AC (SMA) -55°C ~ 150°C
MUR820

MUR820

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division

9,663 -
MUR820

数据表

- TO-220-2 Tube Obsolete Standard 200 V 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V - 8A - - Through Hole TO-220AC -65°C ~ 175°C
SF2006PT

SF2006PT

DIODE GEN PURP 400V 20A TO247AD

Taiwan Semiconductor Corporation

900 -
SF2006PT

数据表

- TO-247-3 Tube Active Standard 400 V 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 175pF @ 4V, 1MHz 20A - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
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