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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
YQ12RSM10SDTFTL1

YQ12RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 12A

Rohm Semiconductor

4,000 -
YQ12RSM10SDTFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 670 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 90 µA @ 100 V - 12A Automotive AEC-Q101 Surface Mount TO-277A 175°C
TRS4E65H,S1Q

TRS4E65H,S1Q

G3 SIC-SBD 650V 4A TO-220-2L

Toshiba Semiconductor and Storage

341 -
TRS4E65H,S1Q

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.35 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz 4A - - Through Hole TO-220-2L 175°C
SE30DT12HM3/I

SE30DT12HM3/I

DIODE GEN PURP 1.2KV 30A SMPD

Vishay General Semiconductor - Diodes Division

1,243 -
SE30DT12HM3/I

数据表

eSMP® TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 1200 V 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) 3.4 µs 10 µA @ 1200 V 132pF @ 4V, 1MHz 30A Automotive AEC-Q101 Surface Mount SMPD -55°C ~ 175°C
SDS065J004D3-ISARH

SDS065J004D3-ISARH

DIODE 650V-4A TO220-2L

Luminus Devices Inc.

150 -
SDS065J004D3-ISARH

数据表

Sanan TO252 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 12 µA @ 650 V 213pF @ 0V, 1MHz 14A - - Surface Mount TO-252-2L -55°C ~ 175°C
UF1008F_T0_00001

UF1008F_T0_00001

ITO-220AC, ULTRA

Panjit International Inc.

1,738 -
UF1008F_T0_00001

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 800 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 1 µA @ 800 V 50pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
SIT08C065

SIT08C065

DIODE SIL CARB 650V 8A TO220AC

Diotec Semiconductor

1,000 -
SIT08C065

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 650 V - 8A - - Through Hole TO-220AC -50°C ~ 175°C
ES2B R5G

ES2B R5G

DIODE GEN PURP 100V 2A DO214AA

Taiwan Semiconductor Corporation

10 -
ES2B R5G

数据表

- DO-214AA, SMB Tape & Reel (TR) Discontinued at Digi-Key Standard 100 V 950 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V 25pF @ 4V, 1MHz 2A - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
HER301-T

HER301-T

DIODE GEN PURP 50V 3A DO201AD

Diodes Incorporated

5,623 -
HER301-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 50 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V - 3A - - Through Hole DO-201AD -65°C ~ 150°C
SK12-13

SK12-13

DIODE SCHOTTKY 20V 1A SMB

Diodes Incorporated

2,179 -
SK12-13

数据表

- DO-214AA, SMB Tape & Reel (TR) Discontinued at Digi-Key Schottky 20 V 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V 110pF @ 4V, 1MHz 1A - - Surface Mount SMB -65°C ~ 125°C
YQ20NL10SDTL

YQ20NL10SDTL

TRENCH MOS STRUCTURE, 100V, 20A

Rohm Semiconductor

988 -
YQ20NL10SDTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 100 V 960 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 70 µA @ 100 V - 20A - - Surface Mount TO-263L 150°C
P2500X

P2500X

DIODE AVALANCHE 1800V 25A P600

Diotec Semiconductor

940 -
P2500X

数据表

- P600, Axial Cut Tape (CT) Active Avalanche 1800 V 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1800 V - 25A - - Through Hole P-600 -50°C ~ 175°C
VS-30ETH06STRR-M3

VS-30ETH06STRR-M3

DIODE GEN PURP 600V 30A TO263AB

Vishay General Semiconductor - Diodes Division

4,542 -
VS-30ETH06STRR-M3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - 30A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
YQ15RSM10SDTFTL1

YQ15RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 15A

Rohm Semiconductor

3,328 -
YQ15RSM10SDTFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 680 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 15A Automotive AEC-Q101 Surface Mount TO-277A 175°C
FFSH1065B-F155

FFSH1065B-F155

650V 10A SIC SBD GEN 1.5

onsemi

153 -
FFSH1065B-F155

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz 11.5A - - Through Hole TO-247-2 -55°C ~ 175°C
VS-20ATS12HM3

VS-20ATS12HM3

DIODE GEN PURP 1.2KV 20A TO220-3

Vishay General Semiconductor - Diodes Division

975 -
VS-20ATS12HM3

数据表

- TO-220-3 Tube Active Standard 1200 V 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - 20A Automotive AEC-Q101 Through Hole TO-220-3 -40°C ~ 150°C
SDS120J002C3-ISATH

SDS120J002C3-ISATH

DIODE 1200V-2A TO220-2L

Luminus Devices Inc.

169 -
SDS120J002C3-ISATH

数据表

Sanan TO220 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.5 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 1200 V 165pF @ 0V, 1MHz 11A - - Through Hole TO-220-2L -55°C ~ 175°C
VS-8ETL06STRRHM3

VS-8ETL06STRRHM3

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division

782 -
VS-8ETL06STRRHM3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V - 8A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
RB218RSM10STFTL1

RB218RSM10STFTL1

100V 20A, TO-277A, ULTRA LOW SBD

Rohm Semiconductor

4,000 -
RB218RSM10STFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 880 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 5.2 µA @ 100 V - 20A Automotive AEC-Q101 Surface Mount TO-277A 175°C
IDW15E65D2FKSA1

IDW15E65D2FKSA1

DIODE GP 650V 30A TO247-3-1

Infineon Technologies

219 -
IDW15E65D2FKSA1

数据表

- TO-247-3 Tube Active Standard 650 V 2.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 47 ns 40 µA @ 650 V - 30A - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
SF2004PTH

SF2004PTH

DIODE GEN PURP 200V 20A TO247AD

Taiwan Semiconductor Corporation

900 -
SF2004PTH

数据表

- TO-247-3 Tube Active Standard 200 V 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 175pF @ 4V, 1MHz 20A Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
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