富聪科技订单满¥1000免运费
关注我们:

单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-18TQ035STRR-M3

VS-18TQ035STRR-M3

DIODE SCHOTTKY 35V 18A TO263AB

Vishay General Semiconductor - Diodes Division

3,910 -
VS-18TQ035STRR-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 35 V 600 mV @ 18 A Fast Recovery =< 500ns, > 200mA (Io) - 2.5 mA @ 35 V 1400pF @ 5V, 1MHz 18A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
SFS1604G

SFS1604G

DIODE GEN PURP 200V 16A TO263AB

Taiwan Semiconductor Corporation

1,665 -
SFS1604G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 80pF @ 4V, 1MHz 16A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
MBRB10H60HE3_B/P

MBRB10H60HE3_B/P

DIODE SCHOTTKY 60V 10A TO263AB

Vishay General Semiconductor - Diodes Division

5,333 -
MBRB10H60HE3_B/P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Schottky 60 V 710 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V - 10A Automotive AEC-Q101 Surface Mount TO-263AB -65°C ~ 175°C
SFS1604GH

SFS1604GH

DIODE GEN PURP 200V 16A TO263AB

Taiwan Semiconductor Corporation

1,586 -
SFS1604GH

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 80pF @ 4V, 1MHz 16A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SD840-T

SD840-T

DIODE SCHOTTKY 40V 8A DO201AD

Diodes Incorporated

4,935 -
SD840-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Schottky 40 V 550 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V - 8A - - Through Hole DO-201AD -65°C ~ 150°C
P2000MTL

P2000MTL

DIODE GEN PURP 1000V 20A P600

Diotec Semiconductor

961 -
P2000MTL

数据表

- P600, Axial Cut Tape (CT) Active Standard 1000 V 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1000 V - 20A - - Through Hole P-600 -50°C ~ 175°C
CN649 BK

CN649 BK

DIODE GEN PURP 600V 400MA DO41

Central Semiconductor Corp

6,676 -
CN649 BK

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 600 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 200 nA @ 600 V 11pF @ 12V, 1MHz 400mA - - Through Hole DO-41 -65°C ~ 150°C
SFS1605G

SFS1605G

DIODE GEN PURP 300V 16A TO263AB

Taiwan Semiconductor Corporation

1,600 -
SFS1605G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 60pF @ 4V, 1MHz 16A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
FCH30AU10

FCH30AU10

DIODE SCHOT 100V 30A TO220 F

KYOCERA AVX

8,577 -
FCH30AU10

数据表

- TO-220-3 Full Pack Tube Active Schottky 100 V 940 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 100 V - 30A - - Through Hole TO-220 Full-Mold -40°C ~ 150°C
SFS1605GH

SFS1605GH

DIODE GEN PURP 300V 16A TO263AB

Taiwan Semiconductor Corporation

1,600 -
SFS1605GH

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 60pF @ 4V, 1MHz 16A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
V35DM120HM3/I

V35DM120HM3/I

DIODE SCHOTTKY 120V 6.3A TO263AC

Vishay General Semiconductor - Diodes Division

4,858 -
V35DM120HM3/I

数据表

eSMP®, TMBS® TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Schottky 120 V 1.05 V @ 35 A Fast Recovery =< 500ns, > 200mA (Io) - 1.2 mA @ 120 V - 6.3A Automotive AEC-Q101 Surface Mount TO-263AC (SMPD) -40°C ~ 175°C
SFS1606G

SFS1606G

DIODE GEN PURP 400V 16A TO263AB

Taiwan Semiconductor Corporation

1,600 -
SFS1606G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 400 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 60pF @ 4V, 1MHz 16A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UD1006LS-SB5

UD1006LS-SB5

DIODE GEN PURP 10A TO220FI-SB

onsemi

4,559 -
UD1006LS-SB5

数据表

- TO-220-2 Full Pack Tube Obsolete Standard - 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 20 µA @ 600 V - 10A - - Through Hole TO-220FI(LS)-SB 150°C (Max)
SFS1606GH

SFS1606GH

DIODE GEN PURP 400V 16A TO263AB

Taiwan Semiconductor Corporation

1,577 -
SFS1606GH

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 400 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 60pF @ 4V, 1MHz 16A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
DTV1500HDFP

DTV1500HDFP

DIODE GP 1.5KV 6A TO220FPAC

STMicroelectronics

6,223 -
DTV1500HDFP

数据表

- TO-220-2 Full Pack Tube Obsolete Standard 1500 V 1.6 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1 µs 100 µA @ 1500 V - 6A - - Through Hole TO-220FPAC 175°C (Max)
SDS120J003D3-ISARH

SDS120J003D3-ISARH

DIODE 1200V-3A TO252-2L

Luminus Devices Inc.

200 -
SDS120J003D3-ISARH

数据表

Sanan TO252 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 1.35 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 12 µA @ 1200 V - 3A - - Surface Mount TO-252-2L -55°C ~ 175°C
VS-MBRB1635TRL-M3

VS-MBRB1635TRL-M3

DIODE SCHOTTKY 35V 16A TO263AB

Vishay General Semiconductor - Diodes Division

7,437 -
VS-MBRB1635TRL-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 35 V 630 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 35 V 1400pF @ 5V, 1MHz 16A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 150°C
RURP15100-F085P

RURP15100-F085P

DIODE GEN PURP 1KV 15A TO220-2

onsemi

800 -
RURP15100-F085P

数据表

- TO-220-2 Tube Active Standard 1000 V 1.8 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1000 V - 15A - - Through Hole TO-220-2 -55°C ~ 175°C
VS-MBRB1635TRR-M3

VS-MBRB1635TRR-M3

DIODE SCHOTTKY 35V 16A TO263AB

Vishay General Semiconductor - Diodes Division

8,518 -
VS-MBRB1635TRR-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 35 V 630 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 35 V 1400pF @ 5V, 1MHz 16A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 150°C
NRTS3060MFST3G

NRTS3060MFST3G

DIODE SCHOTTKY 60V 30A 5DFN

onsemi

4,839 -
NRTS3060MFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 60 V 600 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V 3140pF @ 1V, 1MHz 30A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
Total 47618 Record«Prev1... 303304305306307308309310...2381Next»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户