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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UGF12JD

UGF12JD

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation

900 -
UGF12JD

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 3.1 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - 12A - - Through Hole ITO-220AC -55°C ~ 175°C
SF1608G

SF1608G

DIODE GEN PURP 600V 16A TO220AB

Taiwan Semiconductor Corporation

699 -
SF1608G

数据表

- TO-220-3 Tube Active Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz 16A - - Through Hole TO-220AB -55°C ~ 150°C
NSB8JTHE3_B/I

NSB8JTHE3_B/I

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division

5,777 -
NSB8JTHE3_B/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 600 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 55pF @ 4V, 1MHz 8A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
NSB8KTHE3_B/I

NSB8KTHE3_B/I

DIODE GEN PURP 800V 8A TO263AB

Vishay General Semiconductor - Diodes Division

4,528 -
NSB8KTHE3_B/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 800 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 55pF @ 4V, 1MHz 8A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
NSB8MTHE3_B/I

NSB8MTHE3_B/I

DIODE GEN PURP 1KV 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,311 -
NSB8MTHE3_B/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 1000 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 55pF @ 4V, 1MHz 8A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
VS-20L15TSTRR-M3

VS-20L15TSTRR-M3

DIODE SCHOTTKY 15V 20A TO263AB

Vishay General Semiconductor - Diodes Division

8,971 -
VS-20L15TSTRR-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 15 V 410 mV @ 19 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 15 V 2000pF @ 5V, 1MHz 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 125°C
MUR1560HS-BP

MUR1560HS-BP

Interface

Micro Commercial Co

8,921 -
MUR1560HS-BP

数据表

- TO-220-2 Bulk Active Standard 600 V 1.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - 15A - - Through Hole TO-220AC -55°C ~ 175°C
NRVHP620LFST1G

NRVHP620LFST1G

DIODE GEN PURP 200V 6A LFPAK4

onsemi

2,957 -
NRVHP620LFST1G

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active Standard 200 V 950 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 200 V - 6A Automotive AEC-Q101 Surface Mount LFPAK4 (5x6) -55°C ~ 175°C
PSDD0860S1_L2_00001

PSDD0860S1_L2_00001

600V FAST RECOVERY DIODE / LOW T

Panjit International Inc.

2,996 -
PSDD0860S1_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 2.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 600 V - 8A - - Surface Mount TO-252AA -55°C ~ 150°C
PSDC0860L1_L2_00601

PSDC0860L1_L2_00601

600V FAST RECOVERY DIODE / LOW V

Panjit International Inc.

2,990 -
PSDC0860L1_L2_00601

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.8 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 100 µA @ 600 V - 8A - - Surface Mount TO-252AA -55°C ~ 150°C
EGP31F-E3/C

EGP31F-E3/C

DIODE GEN PURP 300V 3A DO201AD

Vishay General Semiconductor - Diodes Division

7,691 -
EGP31F-E3/C

数据表

SUPERECTIFIER® DO-201AD, Axial Tape & Reel (TR) Active Standard 300 V 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 3 µA @ 300 V 48pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 175°C
PSDD0860L1_L2_00001

PSDD0860L1_L2_00001

600V FAST RECOVERY DIODE / LOW V

Panjit International Inc.

2,976 -
PSDD0860L1_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.8 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 100 µA @ 600 V - 8A - - Surface Mount TO-252AA -55°C ~ 150°C
NRVTS3060MFST3G

NRVTS3060MFST3G

DIODE SCHOTTKY 60V 30A 5DFN

onsemi

2,886 -
NRVTS3060MFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 60 V 600 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V 3140pF @ 1V, 1MHz 30A Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
EGP31G-E3/C

EGP31G-E3/C

DIODE GEN PURP 400V 3A DO201AD

Vishay General Semiconductor - Diodes Division

9,695 -
EGP31G-E3/C

数据表

SUPERECTIFIER® DO-201AD, Axial Tape & Reel (TR) Active Standard 400 V 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 4 µA @ 400 V 48pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 175°C
SFA1004G

SFA1004G

DIODE GEN PURP 200V 10A TO220AC

Taiwan Semiconductor Corporation

1,000 -
SFA1004G

数据表

- TO-220-2 Tube Active Standard 200 V 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 70pF @ 4V, 1MHz 10A - - Through Hole TO-220AC -55°C ~ 150°C
EGP51F-E3/C

EGP51F-E3/C

DIODE GEN PURP 300V 5A DO201AD

Vishay General Semiconductor - Diodes Division

7,401 -
EGP51F-E3/C

数据表

SUPERECTIFIER® DO-201AD, Axial Tape & Reel (TR) Active Standard 300 V 1.25 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 300 V 48pF @ 4V, 1MHz 5A - - Through Hole DO-201AD -65°C ~ 175°C
RHRP8120

RHRP8120

DIODE GEN PURP 1.2KV 8A TO220-2L

onsemi

5,923 -
RHRP8120

数据表

- TO-220-2 Tube Obsolete Standard 1200 V 3.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 100 µA @ 1200 V - 8A - - Through Hole TO-220-2L -65°C ~ 175°C
VS-10ETS12STRL-M3

VS-10ETS12STRL-M3

DIODE GEN PURP 1.2KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

5,411 -
VS-10ETS12STRL-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - 10A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
FES16FT-E3/45

FES16FT-E3/45

DIODE GEN PURP 300V 16A TO220AC

Vishay General Semiconductor - Diodes Division

7,285 -
FES16FT-E3/45

数据表

- TO-220-2 Tube Active Standard 300 V 1.3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - 16A - - Through Hole TO-220AC -65°C ~ 150°C
MURF880G

MURF880G

25NS, 8A, 800V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation

985 -
MURF880G

数据表

- TO-220-2 Full Pack Tube Active Standard 800 V 2.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 800 V 57pF @ 4V, 1MHz 8A - - Through Hole ITO-220AC -55°C ~ 175°C
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