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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
MBR5U45-TP

MBR5U45-TP

Interface

Micro Commercial Co

6,598 -
MBR5U45-TP

数据表

- TO-277, 3-PowerDFN Bulk Active Schottky 45 V 470 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 45 V - 5A - - Surface Mount TO-277 -55°C ~ 150°C
UG2JAHR3G

UG2JAHR3G

DIODE GEN PURP 600V 2A DO214AC

Taiwan Semiconductor Corporation

2,662 -
UG2JAHR3G

数据表

- DO-214AC, SMA Tape & Reel (TR) Discontinued at Digi-Key Standard 600 V 1.3 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 2 µA @ 600 V 20pF @ 4V, 1MHz 2A - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
STF12100

STF12100

DIODE SCHOTTKY 100V 12A ITO220AC

SMC Diode Solutions

2,539 -
STF12100

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Schottky 100 V 750 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 100 V 660pF @ 5V, 1MHz 12A - - Through Hole ITO-220AC -55°C ~ 150°C
US1K R3G

US1K R3G

DIODE GEN PURP 800V 1A DO214AC

Taiwan Semiconductor Corporation

2,447 -
US1K R3G

数据表

- DO-214AC, SMA Tape & Reel (TR) Discontinued at Digi-Key Standard 800 V 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V 10pF @ 4V, 1MHz 1A - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
MBRD845C-TP

MBRD845C-TP

Interface

Micro Commercial Co

6,899 -
MBRD845C-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active Schottky 45 V 510 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V - 8A - - Surface Mount DPAK -55°C ~ 150°C
RK 14

RK 14

DIODE SCHOTTKY 40V 1.7A AXIAL

Sanken Electric USA Inc.

8,878 -
RK 14

数据表

- Axial Bulk Obsolete Schottky 40 V 550 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 40 V - 1.7A - - Through Hole - -40°C ~ 150°C
RK 34

RK 34

DIODE SCHOTTKY 40V 2.5A AXIAL

Sanken Electric USA Inc.

5,696 -
RK 34

数据表

- Axial Bulk Obsolete Schottky 40 V 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 40 V - 2.5A - - Through Hole - -40°C ~ 150°C
RK 36

RK 36

DIODE SCHOTTKY 60V 2A AXIAL

Sanken Electric USA Inc.

7,846 -
RK 36

数据表

- Axial Bulk Obsolete Schottky 60 V 620 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 60 V - 2A - - Through Hole - -40°C ~ 150°C
SCS215AJHRTLL

SCS215AJHRTLL

DIODE SIL CARB 650V 15A TO263AB

Rohm Semiconductor

2,008 -
SCS215AJHRTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz 15A Automotive AEC-Q101 Surface Mount TO-263AB 175°C (Max)
MSC020SDA120K

MSC020SDA120K

DIODE SIL CARB 1.2KV 49A TO220-2

Microchip Technology

105 -
MSC020SDA120K

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1130pF @ 1V, 1MHz 49A - - Through Hole TO-220-2 -55°C ~ 175°C
VS-80APF10-M3

VS-80APF10-M3

DIODE GEN PURP 1KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

475 -
VS-80APF10-M3

数据表

- TO-247-3 Tube Active Standard 1000 V 1.35 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1000 V - 80A - - Through Hole TO-247AC -40°C ~ 150°C
DHG30I600HA

DHG30I600HA

DIODE GEN PURP 600V 30A TO247

IXYS

296 -
DHG30I600HA

数据表

- TO-247-2 Tube Active Standard 600 V 2.36 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - 30A - - Through Hole TO-247 -55°C ~ 150°C
FFSH20120ADN-F085

FFSH20120ADN-F085

DIODE SIL CARB 1.2KV 15A TO247-3

onsemi

304 -
FFSH20120ADN-F085

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 612pF @ 1V, 100kHz 15A Automotive AEC-Q101 Through Hole TO-247-3 -55°C ~ 175°C
FFSH4065BDN-F085

FFSH4065BDN-F085

DIODE SIL CARB 650V 20A TO247-3

onsemi

140 -
FFSH4065BDN-F085

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz 20A Automotive AEC-Q101 Through Hole TO-247-3 -55°C ~ 175°C
LSIC2SD065D20A

LSIC2SD065D20A

DIODE SIL CARB 650V 20A TO220AC

Littelfuse Inc.

742 -
LSIC2SD065D20A

数据表

Gen2 TO-220-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 45 A No Recovery Time > 500mA (Io) 0 ns - - 20A - - Through Hole TO-220AC -
S5D40120D

S5D40120D

1200V, 40A, TO-247AD, SIC SCHOTT

SMC Diode Solutions

1,800 -
S5D40120D

数据表

- TO-247-3 Tube Active - - - - - - - - - - Through Hole TO-247AD -
SCS220AJHRTLL

SCS220AJHRTLL

DIODE SIL CARB 650V 20A TO263AB

Rohm Semiconductor

2,697 -
SCS220AJHRTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz 20A Automotive AEC-Q101 Surface Mount TO-263AB 175°C (Max)
C4D15120H

C4D15120H

DIODE SIL CARB 1.2KV 39A TO247-2

Wolfspeed, Inc.

420 -
C4D15120H

数据表

Z-Rec® TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1200pF @ 0V, 1MHz 39A - - Through Hole TO-247-2 -55°C ~ 175°C
FFSB20120A-F085

FFSB20120A-F085

DIODE SIL CARB 1.2KV 32A D2PAK

onsemi

2,137 -
FFSB20120A-F085

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz 32A Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
SCS220KGC17

SCS220KGC17

DIODE SIC 1.2KV 20A TO220ACFP

Rohm Semiconductor

991 -
SCS220KGC17

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.6 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 1050pF @ 1V, 1MHz 20A - - Through Hole TO-220ACFP 175°C
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