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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
AU2PK-M3/87A

AU2PK-M3/87A

DIODE AVALANCHE 800V 1.3A TO277A

Vishay General Semiconductor - Diodes Division

9,585 -
AU2PK-M3/87A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 800 V 2.5 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 800 V 29pF @ 4V, 1MHz 1.3A - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU2PM-M3/87A

AU2PM-M3/87A

DIODE AVALANCHE 1KV 1.3A TO277A

Vishay General Semiconductor - Diodes Division

6,106 -
AU2PM-M3/87A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 1000 V 2.5 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V 29pF @ 4V, 1MHz 1.3A - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
V12P15-M3/I

V12P15-M3/I

DIODE SCHOTTKY 150V 12A TO277A

Vishay General Semiconductor - Diodes Division

7,776 -
V12P15-M3/I

数据表

eSMP®, TMBS® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 150 V 1.08 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 150 V - 12A - - Surface Mount TO-277A (SMPC) -40°C ~ 150°C
V15PM12-M3/I

V15PM12-M3/I

DIODE SCHOTTKY 120V 15A TO277A

Vishay General Semiconductor - Diodes Division

2,562 -
V15PM12-M3/I

数据表

eSMP®, TMBS® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 120 V 840 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 120 V - 15A - - Surface Mount TO-277A (SMPC) -40°C ~ 150°C
VS-3C16ET07S2L-M3

VS-3C16ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

1,594 -
VS-3C16ET07S2L-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 85 µA @ 650 V 700pF @ 1V, 1MHz 16A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
SCS215AEGC11

SCS215AEGC11

DIODE SIL CARBIDE 650V 15A TO247

Rohm Semiconductor

293 -
SCS215AEGC11

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz 15A - - Through Hole TO-247 175°C
RFS60TZ6SGC13

RFS60TZ6SGC13

DIODE GEN PURP 650V 60A TO247GE

Rohm Semiconductor

566 -
RFS60TZ6SGC13

数据表

- TO-247-2 Tube Not For New Designs Standard 650 V 2.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 10 µA @ 650 V - 60A - - Through Hole TO-247GE 175°C
FFSH1065B-F085

FFSH1065B-F085

DIODE SIL CARB 650V 11.5A TO247

onsemi

1,685 -
FFSH1065B-F085

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V - No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz 11.5A Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
S3D30065D1

S3D30065D1

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

255 -
S3D30065D1

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 650 V 2307pF @ 0V, 100MHz 84A - - Through Hole TO-247AD -55°C ~ 175°C
IDW20G65C5BXKSA2

IDW20G65C5BXKSA2

DIODE SIL CARB 650V 10A TO247-3

Infineon Technologies

122 -
IDW20G65C5BXKSA2

数据表

CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz 10A - - Through Hole PG-TO247-3 -55°C ~ 175°C
121SPC045A

121SPC045A

DIODE SCHOTTKY 45V 120A SPD-3A

SMC Diode Solutions

340 -
121SPC045A

数据表

- SPD-3A Bulk Active Schottky 45 V 660 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 2.4 mA @ 45 V 4800pF @ 5V, 1MHz 120A - - Surface Mount SPD-3A -55°C ~ 175°C
S3D30065H

S3D30065H

DIODE SIL CARB 650V 84A TO247AC

SMC Diode Solutions

249 -
S3D30065H

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 650 V 2307pF @ 0V, 100MHz 84A - - Through Hole TO-247AC -55°C ~ 175°C
1N3889R

1N3889R

DIODE GEN PURP REV 50V 12A DO4

GeneSiC Semiconductor

150 -
1N3889R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 50 V 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - 12A - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
SS215L RUG

SS215L RUG

DIODE SCHOTTKY 150V 2A SUB SMA

Taiwan Semiconductor Corporation

3,484 -
SS215L RUG

数据表

- DO-219AB Tape & Reel (TR) Active Schottky 150 V 950 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 150 V - 2A - - Surface Mount Sub SMA -55°C ~ 150°C
10A04GP-TP

10A04GP-TP

Interface

Micro Commercial Co

7,736 -
10A04GP-TP

数据表

- R-6, Axial Bulk Active Standard 400 V 1.2 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 150pF @ 4V, 1MHz 10A - - Through Hole R-6 -55°C ~ 150°C
S8JCHR7G

S8JCHR7G

DIODE GEN PURP 600V 8A DO214AB

Taiwan Semiconductor Corporation

4,730 -
S8JCHR7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 600 V 985 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 600 V 48pF @ 4V, 1MHz 8A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S8KC R7G

S8KC R7G

DIODE GEN PURP 800V 8A DO214AB

Taiwan Semiconductor Corporation

3,493 -
S8KC R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 800 V 985 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 800 V 48pF @ 4V, 1MHz 8A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S8MC R7G

S8MC R7G

DIODE GEN PURP 1KV 8A DO214AB

Taiwan Semiconductor Corporation

9,277 -
S8MC R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 1000 V 985 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 1000 V 48pF @ 4V, 1MHz 8A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
SK210A R3G

SK210A R3G

DIODE SCHOTTKY 100V 2A DO214AC

Taiwan Semiconductor Corporation

9,904 -
SK210A R3G

数据表

- DO-214AC, SMA Tape & Reel (TR) Discontinued at Digi-Key Schottky 100 V 850 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 2A - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
10A06GP-TP

10A06GP-TP

Interface

Micro Commercial Co

2,226 -
10A06GP-TP

数据表

- R-6, Axial Bulk Active Standard 800 V 1.2 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 150pF @ 4V, 1MHz 10A - - Through Hole R-6 -55°C ~ 150°C
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