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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AU2PK-M3/87ADIODE AVALANCHE 800V 1.3A TO277A |
9,585 | - |
|
数据表 |
eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 800 V | 2.5 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 800 V | 29pF @ 4V, 1MHz | 1.3A | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
|
AU2PM-M3/87ADIODE AVALANCHE 1KV 1.3A TO277A |
6,106 | - |
|
数据表 |
eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 1000 V | 2.5 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 1000 V | 29pF @ 4V, 1MHz | 1.3A | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
|
V12P15-M3/IDIODE SCHOTTKY 150V 12A TO277A |
7,776 | - |
|
数据表 |
eSMP®, TMBS® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 1.08 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 150 V | - | 12A | - | - | Surface Mount | TO-277A (SMPC) | -40°C ~ 150°C |
|
V15PM12-M3/IDIODE SCHOTTKY 120V 15A TO277A |
2,562 | - |
|
数据表 |
eSMP®, TMBS® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 120 V | 840 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 120 V | - | 15A | - | - | Surface Mount | TO-277A (SMPC) | -40°C ~ 150°C |
|
VS-3C16ET07S2L-M3650 V POWER SIC GEN 3 MERGED PIN |
1,594 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 85 µA @ 650 V | 700pF @ 1V, 1MHz | 16A | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
SCS215AEGC11DIODE SIL CARBIDE 650V 15A TO247 |
293 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | 15A | - | - | Through Hole | TO-247 | 175°C |
|
RFS60TZ6SGC13DIODE GEN PURP 650V 60A TO247GE |
566 | - |
|
数据表 |
- | TO-247-2 | Tube | Not For New Designs | Standard | 650 V | 2.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 650 V | - | 60A | - | - | Through Hole | TO-247GE | 175°C |
|
FFSH1065B-F085DIODE SIL CARB 650V 11.5A TO247 |
1,685 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | 11.5A | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
S3D30065D1DIODE SCHOTTKY SILICON CARBIDE S |
255 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 2307pF @ 0V, 100MHz | 84A | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
IDW20G65C5BXKSA2DIODE SIL CARB 650V 10A TO247-3 |
122 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
121SPC045ADIODE SCHOTTKY 45V 120A SPD-3A |
340 | - |
|
数据表 |
- | SPD-3A | Bulk | Active | Schottky | 45 V | 660 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.4 mA @ 45 V | 4800pF @ 5V, 1MHz | 120A | - | - | Surface Mount | SPD-3A | -55°C ~ 175°C |
|
S3D30065HDIODE SIL CARB 650V 84A TO247AC |
249 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 2307pF @ 0V, 100MHz | 84A | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
1N3889RDIODE GEN PURP REV 50V 12A DO4 |
150 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 50 V | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | 12A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
|
SS215L RUGDIODE SCHOTTKY 150V 2A SUB SMA |
3,484 | - |
|
数据表 |
- | DO-219AB | Tape & Reel (TR) | Active | Schottky | 150 V | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | 2A | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
10A04GP-TPInterface |
7,736 | - |
|
数据表 |
- | R-6, Axial | Bulk | Active | Standard | 400 V | 1.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | 150pF @ 4V, 1MHz | 10A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
S8JCHR7GDIODE GEN PURP 600V 8A DO214AB |
4,730 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Discontinued at Digi-Key | Standard | 600 V | 985 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 600 V | 48pF @ 4V, 1MHz | 8A | - | - | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
|
S8KC R7GDIODE GEN PURP 800V 8A DO214AB |
3,493 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Discontinued at Digi-Key | Standard | 800 V | 985 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 800 V | 48pF @ 4V, 1MHz | 8A | - | - | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
|
S8MC R7GDIODE GEN PURP 1KV 8A DO214AB |
9,277 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Discontinued at Digi-Key | Standard | 1000 V | 985 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 48pF @ 4V, 1MHz | 8A | - | - | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
SK210A R3GDIODE SCHOTTKY 100V 2A DO214AC |
9,904 | - |
|
数据表 |
- | DO-214AC, SMA | Tape & Reel (TR) | Discontinued at Digi-Key | Schottky | 100 V | 850 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | 2A | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
|
10A06GP-TPInterface |
2,226 | - |
|
数据表 |
- | R-6, Axial | Bulk | Active | Standard | 800 V | 1.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 150pF @ 4V, 1MHz | 10A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
