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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
RK 39

RK 39

DIODE SCHOTTKY 90V 2A AXIAL

Sanken Electric USA Inc.

4,143 -
RK 39

数据表

- Axial Bulk Obsolete Schottky 90 V 810 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 90 V - 2A - - Through Hole - -40°C ~ 150°C
RM 10

RM 10

DIODE GEN PURP 400V 1.2A AXIAL

Sanken Electric USA Inc.

3,178 -
RM 10

数据表

- Axial Bulk Obsolete Standard 400 V 910 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - 1.2A - - Through Hole Axial -40°C ~ 150°C
RM 11A

RM 11A

DIODE GEN PURP 600V 1.2A AXIAL

Sanken Electric USA Inc.

9,462 -
RM 11A

数据表

- Axial Bulk Obsolete Standard 600 V 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V - 1.2A - - Through Hole Axial -40°C ~ 150°C
RM 2

RM 2

DIODE GEN PURP 400V 1.2A AXIAL

Sanken Electric USA Inc.

3,776 -
RM 2

数据表

- Axial Bulk Obsolete Standard 400 V 910 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - 1.2A - - Through Hole Axial -40°C ~ 150°C
RM 2A

RM 2A

DIODE GEN PURP 600V 1.2A AXIAL

Sanken Electric USA Inc.

4,493 -
RM 2A

数据表

- Axial Bulk Obsolete Standard 600 V 910 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V - 1.2A - - Through Hole Axial -40°C ~ 150°C
SR003 R1G

SR003 R1G

DIODE SCHOTTKY 30V 500MA DO204AL

Taiwan Semiconductor Corporation

6,843 -
SR003 R1G

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Schottky 30 V 550 mV @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 110pF @ 4V, 1MHz 500mA - - Through Hole DO-204AL (DO-41) -55°C ~ 125°C
RN 1Z

RN 1Z

DIODE GEN PURP 200V 1.5A AXIAL

Sanken Electric USA Inc.

9,139 -
RN 1Z

数据表

- Axial Bulk Obsolete Standard 200 V 920 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 20 µA @ 200 V - 1.5A - - Through Hole - -40°C ~ 150°C
RS 1A

RS 1A

DIODE GEN PURP 600V 700MA AXIAL

Sanken Electric USA Inc.

6,216 -
RS 1A

数据表

- Axial Bulk Obsolete Standard 600 V 2.5 V @ 800 mA Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 600 V - 700mA - - Through Hole - -40°C ~ 150°C
RH 1AV1

RH 1AV1

DIODE GEN PURP 600V 600MA AXIAL

Sanken Electric USA Inc.

9,663 -
RH 1AV1

数据表

- Axial Tape & Box (TB) Obsolete Standard 600 V 1.3 V @ 600 mA Standard Recovery >500ns, > 200mA (Io) 4 µs 5 µA @ 600 V - 600mA - - Through Hole - -40°C ~ 150°C
ZHCS750QTA

ZHCS750QTA

Schottky Diode SOT23 T&R 3K

Diodes Incorporated

3,666 -
ZHCS750QTA

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active Schottky 40 V 650 mV @ 750 mA Fast Recovery =< 500ns, > 200mA (Io) 12 ns 100 µA @ 30 V 25pF @ 25V, 1MHz 1.5A Automotive AEC-Q101 Surface Mount SOT-23-3 125°C
B190-13

B190-13

DIODE SCHOTTKY 90V 1A SMA

Diodes Incorporated

3,342 -
B190-13

数据表

- DO-214AC, SMA Tape & Reel (TR) Discontinued at Digi-Key Schottky 90 V 790 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 90 V 80pF @ 4V, 1MHz 1A - - Surface Mount SMA -65°C ~ 150°C
SS29LHR3G

SS29LHR3G

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

3,714 -
SS29LHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Schottky 90 V 850 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 90 V - 2A Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
SS210LHRUG

SS210LHRUG

DIODE SCHOTTKY 100V 2A SUB SMA

Taiwan Semiconductor Corporation

6,543 -
SS210LHRUG

数据表

- DO-219AB Tape & Reel (TR) Active Schottky 100 V 850 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 2A Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
SDURF1520

SDURF1520

DIODE GEN PURP 200V 15A ITO220AC

SMC Diode Solutions

3,573 -
SDURF1520

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 200 V 1.05 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 15A - - Through Hole ITO-220AC -55°C ~ 150°C
PPH810

PPH810

DIODE SCHOTTKY 100V 8A TO277B

Diotec Semiconductor

4,238 -
PPH810

数据表

- TO-277, 3-PowerDFN Bulk Active Schottky 100 V 730 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 8A - - Surface Mount TO-277B -50°C ~ 175°C
SBM1060L_T0_00001

SBM1060L_T0_00001

ULTRA LOW VF SCHOTTKY RECTIFIER

Panjit International Inc.

8,473 -
SBM1060L_T0_00001

数据表

- TO-220-2 Tube Active Schottky 60 V 570 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 220 µA @ 60 V 480pF @ 4V, 1MHz 10A - - Through Hole TO-220AC -55°C ~ 150°C
SB1020_T0_00001

SB1020_T0_00001

SCHOTTKY BARRIER RECTIFIERS

Panjit International Inc.

3,650 -
SB1020_T0_00001

数据表

- TO-220-2 Tube Active Schottky 20 V 550 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 20 V - 10A - - Through Hole TO-220AC -55°C ~ 125°C
LSIC2SD065E40CCA

LSIC2SD065E40CCA

DIODE SIL CARB 650V 45A TO247AD

Littelfuse Inc.

435 -
LSIC2SD065E40CCA

数据表

GEN2 TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 960pF @ 1V, 1MHz 45A Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
E4D20120A

E4D20120A

DIODE SIL CARB 1.2KV 54.5A TO220

Wolfspeed, Inc.

453 -
E4D20120A

数据表

E-Series TO-220-2 Tube Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1500pF @ 0V, 1MHz 54.5A Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
UES1104

UES1104

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

105 -
UES1104

数据表

- A, Axial Bulk Active Standard 200 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V - 1A - - Through Hole A, Axial -55°C ~ 150°C
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